Sumitomo Electric Industries, Limited

Masanori Morishita

Shinsuke Fujiwara

Koji Uematsu

Hiroshi Fukunaga

Katsushi Hashio

Yoshiaki Hagi

Yasuaki Higuchi

Hiroaki Yoshida

Hidetoshi Takayama

Tatsuya Moriwake

A gallium arsenide crystal substrate has a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 300 &#x3bc;m and not greater than 800 &#x3bc;m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of silicon is not lower than 3.0&#xd7;10cmand not higher than 3.0&#xd7;10cm, the gallium arsenide crystal substrate has an average dislocation density not lower than 0 cmand not higher than 15000 cm, and when an atomic concentration of carbon is not lower than 1.0&#xd7;10cmand not higher than 5.0&#xd7;10cm, the gallium arsenide crystal substrate has an average dislocation density not lower than 3000 cmand not higher than 20000 cm.

Gallium arsenide crystal substrate

The gallium arsenide single crystal substrate has a circular main surface, and when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500&#xb0; C. for 10 minutes is counted, the number Cof etch pits in a first circular region having a diameter of 0.2D around the center of the main surface is 0 or more and 10 or less.

Gallium arsenide single crystal substrate

Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100&#xb0; C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal () having an alkali-metal atom concentration of less than 1.0&#xd7;10cm; and a step of growing a second III-nitride crystal () onto a major surface () of the first III-nitride crystal () by HVPE, in an ambient temperature higher than 1100&#xb0; C.

Method of growing III-nitride crystal

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Kobe, Japan

Masanori Morishita