Fujitsu Corporation

Masanori Ito

Kazuo Nakashima

Tsukasa Makino

Hiroaki Ochi

Marie Abe

Fumio Hanzawa

Atsushi Ishii

Ryohei Nishimiya

Tomoaki Tsuruta

Kazuhiro Hara

Koji Ohtsuki

A storage system includes a storage and control units. In each of the control units: a relay unit relays access to the storage; an access controller accesses the storage through one of the relay unit in the control unit and the relay unit in another of the control units; and an operational-state controller determines whether or not the relay unit in the above-mentioned another control unit is usable when the operational-state controller detects occurrence of an abnormality in the above-mentioned another control unit, and makes the above-mentioned another control unit transition to a partially-operational state when the relay unit in the above-mentioned another control unit is usable. In the partially-operational state, at least the access controller in the above-mentioned another control unit is not in operation and the access controller in the control unit can access the storage through the relay unit in the above-mentioned another control unit.

Storage system control apparatus and control method for utilizing a relay unit of an abnormal control unit

There is provided a management apparatus of a storage apparatus. The management apparatus includes an acquisition determination section that determines whether predetermined identification information can be acquired or not from a mounting apparatus that mounts at least one storage apparatus and has at least one predetermined identification information assigned thereto, and a failure determination section that determines, based on a determination result of the acquisition determination section, an access failure to the storage apparatus mounted in the mounting apparatus has been caused due to a failure of the storage apparatus itself or an interruption of a power supply to the mounting apparatus.

Management apparatus, storage system, and storage apparatus management method

A metal-semiconductor-metal photodiode comprises a semiconductor layer and a cathode electrode and an anode electrode which are formed on the semiconductor layer and are made of such mutually different electrode materials that the cathode electrode has a Schottky barrier height .phi..sub.bn from a conduction band satisfying .phi..sub.bn &gt;Eg/2 and the anode electrode has a Schottky barrier height .phi..sub.bp from a valence band satisfying .phi..sub.bp &gt;Eg/2, where Eg denotes the energy band gap.

Metal-semiconductor-metal schottky photodiode

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Kawasaki, Japan

Masanori Ito