Tdk Corporation

Panasonic Intellectual Property Management Co., Ltd.

Renesas Electronics Corporation

Panasonic Corporation

Tanita Corporation

Masanori Ikeda

Hiroyuki Morita

Yoshitaka Murakawa

Shogo Muroya

Tadashi Kameyama

Masahiro Taniguchi

Michinori Tomomatsu

Kenji Okamoto

Masataka Minami

Kenichi Shimada

Taku Murase

Naoki Azuma

Yukitoshi Tsuboi

Katsuhiko Itoh

Tomokazu Ishikura

Hiroyuki Ono

Hiroki Hasegawa

Koji Sakurai

Satoshi Furuichi

Hideaki Katou

Yousuke Hassaku

Kazuo Kido

Hiroshi Okamura

Tomotaka Nishimoto

Tomio Sato

Hiroyuki Kondo

Kazuhiko Itose

Katsusuke Fukasawa

A component mounting device is configured to mount, on a substrate, an electronic component having a functional unit. The component mounting device includes a component supply mechanism, a recognition unit, a component mounting mechanism, and a holding position determination unit. The component supply mechanism supplies the electronic component. The recognition unit recognizes a position of the functional unit. The component mounting mechanism holds the electronic component supplied from the component supply mechanism and mounts the electronic component on the substrate. The holding position determination unit determines a holding position of the electronic component by the component mounting mechanism based on the position of the functional unit recognized by the recognition unit.

Component mounting device and manufacturing method for mounting substrate

The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.

Abnormal power supply voltage detection device and method for detecting abnormal power supply voltage

This ferrite sintered magnet comprises ferrite phases having a magnetoplumbite type crystal structure. This magnet comprises an element R, an element M, Fe, Co, B, Mn and Cr, the element R is at least one element selected from rare earth elements including Y, the element M is at least one element selected from the group consisting of Ca, Sr and Ba, with Ca being an essential element, and when an atomic composition of metallic elements is represented by RMFeCo, x, y and m satisfy formulae:0.2&#x2264;&#x2264;0.8&#x2003;&#x2003;(1)0.1&#x2264;&#x2264;0.65&#x2003;&#x2003;(2)3&#x2264;&#x3c;14&#x2003;&#x2003;(3). Additionally, a content of B is 0.1 to 0.4% by mass in terms of BO, a content of Mn is 0.15 to 1.02% by mass in terms of MnO, and a content of Cr is 0.02 to 2.01% by mass in terms of CrO.

Ferrite sintered magnet, ferrite particle, bonded magnet and rotating electric machine

To provide a ferrite sintered magnet having a high residual magnetic flux density (Br), a high coercive force (HcJ), a good production stability, and also able to produce at a low cost. The ferrite sintered magnet includes a hexagonal M-type ferrite including A, R, Fe, and Co in an atomic ratio of AR(FeCo)O. A is at least one selected from Sr, Ba, and Pb. R is La only or La and at least one selected from rare earth elements. 0.14&#x2264;x&#x2264;0.22, 11.60&#x2264;(12-y)z&#x2264;11.99, and 0.13&#x2264;yz&#x2264;0.17 are satisfied. 0.30&#x2264;Mc&#x2264;0.63 is satisfied in which Mc is CaO content (mass %) converted from a content of Ca included in the ferrite sintered magnet.

Ferrite sintered magnet and rotating electric machine

To provide a ferrite sintered magnet having a high residual magnetic flux density (Br) and a high coercive force (HcJ), and also able to produce at a low cost. The ferrite sintered magnet includes a hexagonal M-type ferrite including A, R, Fe, and Co in an atomic ratio of AR(FeCo)O. A is at least one selected from Sr, Ba, and Pb. R is La only or La and at least one selected from rare earth elements. 0.13&#x2264;x&#x2264;0.23, 10.80&#x2264;(12&#x2212;y)z&#x2264;12.10, and 0.13&#x2264;yz&#x2264;0.20 are satisfied.

A ferrite sintered magnetcomprises M-type ferrite crystal grainsand multiple-crystal grain boundariessurrounded by three or more of the M-type ferrite crystal grains. The ferrite sintered magnetcontains at least Fe, Ca, B, and Si, and contains 0.005 to 0.9 mass % of B in terms of BO. The multiple-crystal grain boundariescontain Si and Ca, and in a case where the molar ratio of Ca to Si in the multiple-crystal grain boundariesis represented by (Ca/Si), the following formula is satisfied.0.1&#x3c;(Ca/Si)&#x3c;0.9

Ferrite sintered magnet and rotary electrical machine comprising the same

A ferrite sintered magnet comprises a plurality of main phase grains containing a ferrite having a hexagonal structure, wherein at least some of the main phase grains are core-shell structure grains each having a core and a shell covering the core; and wherein the minimum value of the content of La in the core is [La]c atom %; the minimum value of the content of Co in the core is [Co]c atom %; the maximum value of the content of La in the shell is [La]s atom %; the maximum value of the content of Co in the shell is [Co]s atom %; [La]c+[Co]c is 3.08 atom % or more and 4.44 atom % or less; and [La]s+[Co]s is 7.60 atom % or more and 9.89 atom % or less.

Ferrite sintered magnet

A ferrite sintered magnet comprising an M type Sr ferrite having a hexagonal structure as a main phase, wherein the ferrite sintered magnet does not substantially comprise a rare earth element and Co, a content of B is 0.005 to 0.9% by mass in terms of BO, and a content of Zn is 0.01 to 1.2% by mass in terms of ZnO.

Ferrite sintered magnet and rotating electric machine comprising the same

According to one embodiment, a semiconductor deviceincludes a temperature sensor modulethat outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unitthat stores the temperature, the digital value, and the sensor voltage value, and a controllerthat calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit, in which the temperature, the digital value, and the sensor voltage value stored in the storage unitinclude absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

Semiconductor device, temperature sensor and power supply voltage monitor

A semiconductor device includes a first temperature sensor module, a second temperature sensor module, a first temperature controller, and a second temperature controller. The first temperature sensor module includes a bandgap reference circuit that outputs a plurality of divided voltages, and a first conversion circuit that performs analog-to-digital conversion processing on one of the plurality of divided voltages to generate a first digital value. The second temperature sensor module includes a second conversion circuit that performs analog-to-digital conversion processing on the one of the plurality of divided voltages to generate a second digital value. The first temperature sensor controller converts the first digital value to a first temperature. The second temperature sensor controller converts the second digital value to a second temperature. The semiconductor device determines whether the first and second temperature modules operate normally based on a difference between the first temperature and the second temperature.

Semiconductor device and test method of semiconductor device

A ferrite sintered magnet comprising an M type Sr ferrite having a hexagonal structure as a main phase, wherein the ferrite sintered magnet comprises La and Co, a content of B is 0.005 to 0.9% by mass in terms of BO, a content of Zn is 0.01 to 1.2% by mass in terms of ZnO, and the ferrite sintered magnet satisfies [La]/[Zn]&#x2264;0.79 and [Co]/[Zn]&#x2264;0.67 when an atomic concentration of La is represented by [La], an atomic concentration of Co is represented by [Co], and an atomic concentration of Zn is represented by [Zn].

A ferrite sintered magnetcomprises M-type ferrite crystal grainshaving a hexagonal structure, two-crystal grain boundariesformed between two of the M-type ferrite crystal grains, and multiple-crystal grain boundariessurrounded by three or more of the M-type ferrite crystal grains. This ferrite sintered magnetcontains at least Fe, Ca, B, and Si, and contains B in an amount of 0.005 to 0.9 mass % in terms of BO, the two-crystal grain boundariesand the multiple-crystal grain boundariescontain Si and Ca, and in a cross-section parallel to a c-axis of the ferrite sintered magnet, when the number of multiple-crystal grain boundarieshaving a maximum length of 0.49 to 5 &#x3bc;m per cross-sectional area of 76 &#x3bc;mis N, N is 7 or less.

A ferrite sintered magnetcomprises M-type ferrite crystal grainshaving a hexagonal crystal structure, two-crystal grain boundariesformed between two of the M-type ferrite crystal grains, and multiple-crystal grain boundariessurrounded by three or more of the M-type ferrite crystal grains. This ferrite sintered magnetcontains at least Fe, Ca, B, and Si, and contains B in an amount of 0.005 to 0.9 mass % in terms of BO, the two-crystal grain boundariesand the multiple-crystal grain boundariescontain Si and Ca, and in a cross-section parallel to a c-axis of the ferrite sintered magnet, when the number of multiple-crystal grain boundaries having a maximum length of 0.088 or more and less than 0.49 &#x3bc;m per cross-sectional area of 76 &#x3bc;mis P, P is 8 or more.

The present invention provides a ferrite sintered magnet comprising ferrite crystal grains having a hexagonal structure, wherein the ferrite sintered magnet comprises metallic elements at an atomic ratio represented by formula (1). In formula (1), R is at least one element selected from the group consisting of Bi and rare-earth elements, and R comprises at least La. In formula (1), w, x, z and m satisfy formulae (2) to (5). The above-mentioned ferrite sintered magnet further has a coefficient of variation of a size of the crystal grains in a section parallel to a c axis of less than 45%.CaRSrFeCo&#x2003;&#x2003;(1)0.360&#x2264;&#x2264;0.420&#x2003;&#x2003;(2)0.110&#x2264;&#x2264;0.173&#x2003;&#x2003;(3)8.51&#x2264;&#x2264;9.71&#x2003;&#x2003;(4)0.208&#x2264;&#x2264;0.269&#x2003;&#x2003;(5)

A ferrite sintered magnet including ferrite grains having a hexagonal crystal structure. The ferrite grains satisfy 0.56&#x2264;W&#x2264;0.68 where W is an average value of circularities of the ferrite grains in a cross section parallel to an axis of easy magnetization.

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Tokyo, Japan

Masanori Ikeda