Sanyo Electric Co., Ltd.

Kanto Sanyo Semiconductors Co., Ltd.

Kanto Sanyo Semiconductor Co., Ltd.

Masanori Iida

Takashi Noma

Akira Suzuki

Katsuhiko Kitagawa

Yukihiro Takao

Yoshinori Seki

Motoaki Wakui

Keiichi Yamaguchi

Hisao Otsuka

Hiroshi Yamada

Kazuo Okada

A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.

Semiconductor device with recess portion over pad electrode

The invention is directed to improvement of reliability of a chip size package type semiconductor device in a manufacturing method thereof. A support body is formed on a front surface of a semiconductor substrate with a first insulation film therebetween. Then, a part of the semiconductor substrate is selectively etched from its back surface to form an opening, and then a second insulation film is formed on the back surface. Next, the first insulation film and the second insulation film at a bottom of the opening are selectively etched, to expose pad electrodes at the bottom of the opening. Then, a third resist layer is selectively formed on a second insulation film at boundaries between sidewalls and the bottom of the opening on the back surface of the semiconductor substrate. Furthermore, a wiring layer electrically connected with the pad electrodes at the bottom of the opening and extending onto the back surface of the semiconductor substrate is selectively formed corresponding to a predetermined pattern.

Semiconductor device manufacturing method

Semiconductor device and manufacturing method thereof

Growing community of inventors

Gunma, Japan

Masanori Iida