Nippon Tungsten Co., Ltd.

Ube Material Industries, Ltd.

Masanobu Takasu

Satoru Sano

Takayuki Watanabe

Akira Ueki

Mitsuyoshi Nagano

Yusuke Hara

Takaaki Tanaka

Yoshihiro Nishimura

Shinzo Mitomi

Yo Arita

Yuuzou Katou

Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.

MgO target for sputtering

The invention provides a polycrystal magnesium oxide (MgO) sintered body which is capable of having a sintered density close to a theoretical density thereof. The MgO sintered body exhibits excellent mechanical properties and heat conductivity, while reducing contamination of an atmosphere due to gas generation. The invention also provides a production method for the sintered body. The polycrystal MgO sintered body has a unique crystalline anisotropy in which (111) faces are oriented along a surface applied with a uniaxial pressure at a high rate. The polycrystalline MgO sintered body is obtained by a method which includes the steps of: sintering an MgO raw material powder, having a particle size of 1 &#x3bc;m or less, under a uniaxial pressure and then subjecting the sintered powder to a heat treatment under an atmosphere containing 0.05 volume % or more of oxygen, at a temperature of 1273 K or more for 1 minute or more.

Polycrystalline magnesium oxide (MgO) sintered body and MgO sputtering target

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Fukuoka, Japan

Masanobu Takasu