Tokyo Electron Limited

International Business Machines Corporation

Masanobu Igeta

Shintaro Aoyama

Hiroshi Shinriki

David L O'Meara

Cory Wajda

Tsuyoshi Takahashi

Kazuyoshi Yamazaki

Hitoshi Kato

Gerrit J Leusink

Anthony Dip

Jun Sato

Atsushi Endo

Hiroshi Yano

Kai-Hung Yu

Masaru Sugimoto

Nicholas Joy

Kazuo Yabe

Kristen Scheer

Atsushi Tsuboi

Shimpei Yamaguchi

Yusaku Izawa

Yasushi Kodashima

Toshihara Eurakawa

Eric Chih Fang Liu

David Rosenthal

Methods are provided for planarizing a patterned substrate in a spatial atomic layer processing system comprising a rotating platen. The patterned substrate may generally include features having higher regions and lower regions. To planarize the patterned substrate, or reduce a height differential between the higher and lower regions, a selective atomic layer etching (ALE) process is disclosed to preferentially form a modified layer on the higher regions of the features by exposing a surface of the patterned substrate to a precursor gas while the rotating platen spins at a high rotational speed. By preferentially forming the modified layer on the higher regions of the features, and subsequently removing the modified layer, the selective ALE process described herein preferentially etches the higher regions of the features to lessen the height differential between the higher and lower regions until a desired planarization of the features is achieved.

Systems and methods for improving planarity using selective atomic layer etching (ALE)

A method for manufacturing a semiconductor device includes forming a support on a side surface of a stack that extends from a substrate. The stack includes a second sacrificial film, plural first sacrificial films and plural silicon (Si)-containing films, wherein one first sacrificial film of the plural sacrificial films is stacked upon the second sacrificial film and the plural sacrificial films and the plural Si-containing films are alternately stacked upon one another, and at least a side of the second sacrificial film is not covered by the support, the one first sacrificial film and the substrate. The method further includes removing the second sacrificial film from the stack to form a space between the substrate and the one first sacrificial film and adjacent to the support, and filling the space with a dielectric film.

Fabrication process flow of dielectric layer for isolation of nano-sheet devices on bulk silicon substrate

A method is provided for void-free Ru metal filling of features in a substrate. The method includes providing a substrate containing features, depositing a Ru metal layer in the features, removing the Ru metal layer from a field area around an opening of the features, and depositing additional Ru metal in the features, where the additional Ru metal is deposited in the features at a higher rate than on the field area. According to one embodiment, the additional Ru metal is deposited until the features are fully filled with Ru metal.

Ruthenium metal feature fill for interconnects

According to an embodiment of present disclosure, a film formation method is provided. The film formation method includes supplying a first process gas as a source gas for obtaining a reaction product to a substrate while rotating a turntable and revolving the substrate, and supplying a second process gas as a gas for nitriding the first process gas adsorbed to the substrate to the substrate in a position spaced apart along a circumferential direction of the turntable from a position where the first process gas is supplied to the substrate. Further, the film formation method includes providing a separation region along the circumferential direction of the turntable between a first process gas supply position and a second process gas supply position, and irradiating ultraviolet rays on a molecular layer of the reaction product formed on the substrate placed on the turntable to control stresses generated in a thin film.

Film formation method, film formation apparatus and storage medium

A film forming method for forming an oxide film on a surface of a substrate to be processed in a processing vessel at a predetermined processing temperature, wherein the method includes a temperature elevating step of elevating a temperature of said substrate to a predetermined processing temperature, the step of elevating the temperature including a step of holding the substrate in an atmosphere containing oxygen before the substrate reaches a temperature of 450&#xb0; C. The film forming method further comprises, after the step of elevating the temperature, a film forming step of forming a radical oxide film by irradiating the substrate surface with energy capable of exciting an oxygen gas.

Film forming method

The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.

Method and system for forming an oxynitride layer

A method to solve such a problem that plasma will not ignite in restarting operation of a processing container that has not been operated with the inside kept drawn to vacuum. Gas containing oxygen is passed in a processing container, and ultraviolet light is irradiated to the gas while gas inside the processing containeris being discharged. After that, a remote plasma sourceis driven to ignite plasma.

Plasma igniting method and substrate processing method

A substrate-processing apparatus () comprises a radical-forming unit () for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel () in which a substrate (W) to be processed is held, and a gas-supplying unit () which is connected to the radical-forming unit. The gas-supplying unit () controls the mixture ratio between a first raw material gas containing the nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying the nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.

Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus

A substrate processing method includes the steps of removing carbon from a surface of a silicon substrate by irradiating an ultraviolet light on the surface in an essentially ultraviolet nonreactive gas atmosphere and forming an oxide film or an oxynitride film on the surface of the silicon substrate by irradiating an ultraviolet light thereon in an essentially ultraviolet reactive gas atmosphere. Further, a computer readable storage medium stores therein a program for controlling the substrate processing method.

Substrate processing method and a computer readable storage medium storing a program for controlling same

A substrate processing method includes the step of removing carbon from a silicon substrate surface and planarizing the silicon substrate surface from which carbon has been removed.

Method and device for processing substrate, and apparatus for manufacturing semiconductor device

A method of nitriding an insulation film, includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film.

Growing community of inventors

Nirasaki, Japan

Masanobu Igeta