Merck Patent Gmbh

Other

Az Electronic Materials (Luxembourg) S.a.r.l.

Aa Electronics Materials USA Corp.

Az Electronic Materials USA Corp.

Masanobu Hayashi

Tatsuro Nagahara

Naofumi Yoshida

Toshiaki Nonaka

Katsuto Taniguchi

Megumi Takahashi

Yuki Ozaki

Seishi Shibayama

[Object] To provide a negative type photosensitive siloxane composition capable of forming a cured film excellent in heat resistance and critical thickness for cracking [Means] The present invention provides a negative type photosensitive siloxane composition comprising: a polysiloxane containing silanol in a specific content, a particular photo base generator, and a solvent. The content of silanol is measured by FT-IR.

Negative type photosensitive siloxane composition and methods for producing cured film and electronic device using the same

[Problem] To provide a polysiloxanecapable of forming a cured film of a thick film with high heat resistance, a composition comprising the polysiloxane, and a method of manufacturing a cured film using the composition. [Means for Solution] To provide a polysiloxane comprising a repeating unit represented by the following formula (Ib), wherein Ris each independently hydrogen, alkyl, aryl, alkenyl, and the like, a composition comprising the polysiloxane, and a method of manufacturing a cured film using the composition.

Polysiloxane, composition comprising the same and cured film using the same

A siliceous film having high purity and a low etching rate is formed by (a) a step for forming a siliceous film on a substrate by coating a solution composed of a polysilazane, e.g., perhydropolysilazane on a substrate and then hardening (curing) the solution in an oxidizing atmosphere, or by coating a silica solution formed by a sol-gel method on a substrate, and (b) a step for heating the siliceous film in an inert gas environment containing a nitrogen-containing compound such as an alkylamine having a base dissociation constant (pKb) no greater than 4.5, or a halogen-containing compound in which the bond energy of a halogen atom such as F, Br, or NFis no greater than 60 kcal/mol, in order to anneal the film.

Method for forming of siliceous film and siliceous film formed using same

The present invention provides a method for forming a siliceous film. According to the method, a siliceous film having a hydrophilic surface can be formed from a polysilazane compound at a low temperature. In the method, a composition containing a polysilazane compound and a silica-conversion reaction accelerator is applied on a substrate surface to form a polysilazane film, and then a polysilazane film-treatment solution is applied thereon so that the polysilazane compound can be converted into a siliceous film at 300&#xb0; C. or less. The polysilazane film-treatment solution contains a solvent, hydrogen peroxide and an alcohol.

Method for producing siliceous film and polysilazane coating treatment liquid used therefor

The present invention provides a method for formation of a siliceous film containing nitrogen in a low concentration. The method according to the present invention comprises the steps of: applying a polysilazane composition on an engraved substrate surface, to form a coating layer; hardening the coating layer only in the part adjacent to the substrate surface, to form a covering film along the shape of the engraved substrate; and removing the polysilazane composition of the coating layer in the part not hardened in the above covering film-formation step. According to this method, two or more siliceous films can be formed and layered.

Method for formation of siliceous film and siliceous film formed by the method

This invention relates to a dipping solution used in a process for producing a siliceous film. The present invention provides a dipping solution and a siliceous film-production process employing the solution. The dipping solution enables to form a homogeneous siliceous film even in concave portions of a substrate having concave portions and convex portions. The substrate is coated with a polysilazane composition, and then dipped in the solution before fire. The dipping solution comprises hydrogen peroxide, a foam-deposit inhibitor, and a solvent.

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Shizuoka, Japan

Masanobu Hayashi