Ulvac, Inc.

International Business Machines Corporation

Masanobu Hatanaka

Michio Ishikawa

John Rozen

Yohei Ogawa

Takashi Ando

Vijay Narayanan

Fumio Nakamura

Kanako Tsumagari

Ruqiang Bao

Se-Ju Lim

Jack Oon Chu

Stephen McConnell Gates

Deborah A Neumayer

Marinus Hopstaken

Nobuyuki Kato

Takakazu Yamada

Yoshikazu Takahashi

Osamu Irino

Kazuhiro Honda

Keon-chang Lee

A resistive switching memory stack, comprised of a bottom electrode, an oxide layer located on the bottom electrode; and a top electrode located on the oxide layer. The top electrode is comprised of a first layer, an intermediate layer located directly on the first layer, and a top layer located on top of the intermediate layer. Wherein the intermediate layer is comprised of a doped carbide active layer.

Etch-resistant doped scavenging carbide electrodes

A gate structure for effective work function adjustments of semiconductor devices that includes a gate dielectric on a channel region of a semiconductor device; a first metal nitride in direct contact with the gate dielectric; a conformal carbide of Aluminum material layer having an aluminum content greater than 30 atomic wt. %; and a second metal nitride layer in direct contact with the conformal aluminum (Al) and carbon (C) containing material layer. The conformal carbide of aluminum (Al) layer includes aluminum carbide, or AlC, yielding an aluminum (Al) content up to 57 atomic % (at. %) and work function setting from 3.9 eV to 5.0 eV at thicknesses below 25 &#x212b;. Such structures can present metal gate length scaling and resistance benefit below 25 nm compared to state of the art work function electrodes.

Conformal replacement gate electrode for short channel devices

A thin film formation method includes setting a film formation subject to 200&#xb0; C. or higher. A first step includes changing a first state, in which a film formation material and a carrier gas are supplied so that the film formation material collects on the film formation subject, to a second state, in which the film formation material is omitted. A second step includes changing a third state, in which a hydrogen gas and a carrier gas are supplied to reduce the film formation material, to a fourth state, in which the hydrogen gas is omitted. The film formation material is any one of Al(CH), Al(CH)H, and Al(CH)Cl. The first step and the second step are alternately repeated to form an aluminum carbide film on the film formation subject such that a content rate of aluminum atoms is 20 atomic percent or greater.

Thin film formation method

A scaled dielectric stack interlayer, compatible with subsequent high temperature processing with good electrical transport & reliability properties is provided. A method for forming a conformal aSi:H passivation layer on a semiconductor device is described. A patterned semiconductor wafer is placed in in a process chamber with a first layer formed thereon and a second layer formed thereon, the first layer and the second layer being two different materials Next, a SiHbased deposition up to a temperature of 400 degrees Celsius is used on the first layer and the second layer thereby forming a conformal aSi:H passivating layer is formed at a higher rate of deposition on the first layer selectively and a lower rate of deposit on the second layer.

Selective and conformal passivation layer for 3D high-mobility channel devices

In a film-forming apparatus in which two or more gases are used, a uniform film is formed. In a film-forming apparatus provided with a film-forming chamber and a shower head, the shower head is provided with a material gas diffusion chamber and a reactive gas diffusion chamber. A gas passage which communicates the material gas diffusion chamber and a material gas introduction pipe is constituted into multi-stages of one stage or more. Each stage has a gas passage represented by 2(where n is the number of stages). The first-stage gas passage has connected to the center thereof the material gas introduction pipe. Each of second-stage and subsequent-stage gas passages has connected to the center thereof connection holes which are provided on both ends of the previous-stage gas passages so as to be in communication with the previous-stage gas passages. Each of the final-stage gas passages is connected to the material gas diffusion chamber by connection holes formed on both ends of each of the gas passages.

Film-forming apparatus

A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer() on a semiconductor substrate () including an element region (), a recess step of forming a recess () in the insulation layer (), a metal layer step of embedding a metal layer () in the recess (), a planarization step of planarizing a surface of the insulation layer () and a surface of the metal layer () to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer () containing at least zirconium element and nitrogen element on the surface of the insulation layer () and the surface of the metal layer () after the planarization step.

Semiconductor device manufacturing method and semiconductor device manufacturing apparatus

The object of this invention is to provide a method for producing a component for vacuum apparatus and a resin coating forming apparatus capable of easily forming a resin coating on an internal flow path complex in shape. The resin coating forming apparatus () comprises a monomer vapor supplying unit (), a vacuum pumping line () for transporting monomer vapor, a connection portion () connectable with the internal flow path of a component (A) provided on part of the vacuum pumping line (), and a temperature adjusting unit () for depositing the monomer vapor onto the internal flow path of the component (A) connected with the connection portion () to form a resin coating. The above arrangement permits the formation of a uniform, high-coverage resin coating on the internal flow path of the component (A) by merely exposing the internal flow path to monomer vapor.

Method for producing component for vacuum apparatus, resin coating forming apparatus and vacuum film forming system

A barrier film made of a ZrBfilm is formed by use of a coating apparatus provided with plasma generation means including a coaxial resonant cavity and a microwave supply circuit for exciting the coaxial resonant cavity, the coaxial resonant cavity including spaced apart conductors provided around the periphery of a nonmetallic pipe for reactive gas introduction, the coaxial resonant cavity having an inner height equal to an integer multiple of one-half of the exciting wavelength, the plasma generation means being constructed such that a gas injected from one end of the nonmetallic pipe is excited into a plasma state by a microwave when the gas is in a region of the nonmetallic pipe which is not covered with the conductors and such that the gas in the plasma state is discharged from the other end of the nonmetallic pipe.

Method of forming barrier film

A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer () on a semiconductor substrate () including an element region (), a recess step of forming a recess () in the insulation layer (), a metal layer step of embedding a metal layer () in the recess (), a planarization step of planarizing a surface of the insulation layer () and a surface of the metal layer () to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer () containing at least zirconium element and nitrogen element on the surface of the insulation layer () and the surface of the metal layer () after the planarization step.

A vacuum film-forming apparatus comprising substrate stages; vacuum chamber-forming containers opposed to the stages; a means for moving the substrate between the stages; and gas-introduction means connected to every containers, wherein one of the stage and the container is ascended or descended towards the other to bring the upper face of the stage and the opening of the container into contact with one another so that vacuum chambers can be formed and that a raw gas and/or a reactant gas can be introduced into each space of the chamber through each gas-introduction means to carry out either the adsorption or reaction step for allowing the raw gas to react with the reactant gas. The apparatus permits the independent establishment of process conditions for the adsorption and reaction processes and the better acceleration of the reaction between raw and reactant gases to give a film having excellent quality and the apparatus can be manufactured at a low cost.

Growing community of inventors

Susono, Japan

Masanobu Hatanaka