Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Masanari Yamaguchi

Tomoyuki Hirano

Hideshi Abe

Yuki Miyanami

Kazufumi Watanabe

Yoshiaki Masuda

Yoshiki Ebiko

Tomoharu Ogita

Taizo Takachi

Takashi Oinoue

Shunsuke Furuse

Yuki Ikebe

Masahiro Tada

Hiroshi Tanaka

Takashi Kinoshita

Kazuya Hayashibe

Keita Ishikawa

Shun Mitarai

Masahiro Tanaka

Koji Naniwada

Teppei Imamura

Kunihiko Saruta

There is provided semiconductor devices and methods of forming the same, including: a first substrate; and a second substrate adjacent to the first substrate, where a side wall of the second substrate includes one or more diced portions that can include a blade diced portion and a stealth diced portion; and also imaging devices and methods of forming the same, including: a first substrate; a transparent layer; an adhesive layer between the first substrate and the transparent layer; a second substrate, where the first substrate is disposed between the adhesive layer and the second substrate; and a groove extending from the adhesive layer to the second substrate, where the groove is filled with the adhesive layer.

Imaging device, manufacturing method, and substrate dividing method

The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Solid-state imaging device with uneven structures and method for manufacturing the same, and electronic apparatus

Solid-state imaging device with uneven structures and the method for manufacturing the same, and electronic apparatus

Solid-state imaging device and method for manufacturing electronic apparatus

Solid-state imaging device and method for manufacturing the same, and electronic apparatus

Solid-state imaging device having an anti-reflection feature and method for manufacturing the same

Solid-state imaging device having a moth-eye structure and light blocking portions, method for manufacturing the same, and electronic apparatus

Disclosed herein is an image display device including a light source and a scanner. The scanner includes (a) a first mirror on which a light beam emitted from the light source is incident, (b) a first light deflector on which the light beam output from the first mirror is incident and that outputs collimated light forming a first output angle depending on a first incident angle of the light beam in association with the pivoting of the first mirror, (c) a second mirror on which the collimated light output from the first light deflector is incident, and (d) a second light deflector on which the collimated light output from the second mirror is incident and that outputs collimated light forming a second output angle depending on a second incident angle of the collimated light in association with the pivoting of the second mirror.

Image display device, head-mounted display, and light beam expanding device

A method for manufacturing a micromachine is provided which can remove a sacrifice layer and can perform sealing without using a specific packaging technique. In a method for manufacturing a micromachine () including an oscillator (), a step of forming a sacrifice layer around a movable portion of the oscillator (); a step of covering a sacrifice layer with an overcoat film (), followed by the formation of a penetrating hole () reaching the sacrifice layer in the overcoat layer (); a step of performing sacrifice-layer etching for removing the sacrifice layer using the penetrating hole () in order to form a space around the movable portion; and a step of performing a film-formation treatment at a reduced pressure following the sacrifice-layer etching so as to seal the penetrating hole ().

Process for fabricating micromachine

Growing community of inventors

Tokyo, Japan

Masanari Yamaguchi