Hitachi, Ltd.

Renesas Electronics Corporation

Renesas Technology Corp.

Other

Hitachi Ulsi Systems Co., Ltd.

Hitachi Vlsi Engineering Corp.

Hitachi Ulsi Engineering Corp.

Nsk Corporation

Hitachi Vsli Engineering Corp.

Masanao Sato

Kiyoshi Matsubara

Hirofumi Mukai

Kenichi Kuroda

Shiro Baba

Kazuyoshi Shiba

Takashi Ito

Masaaki Terasawa

Naoki Yashiki

Eiichi Ishikawa

Bunji Yasumura

Yasuyuki Saito

Naoki Yada

Hiromi Abe

Toshihiko Akiba

Fumio Tsuchiya

Naoki Kawanabe

Hisanori Ito

Takuji Ide

Hiromichi Takemura

Satoshi Imasu

Naohiro Makihira

Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.

Method of manufacturing semiconductor device

A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.

Semiconductor device

Manufacturing method of semiconductor device

Semiconductor device with bond pad wiring lead-out arrangement avoiding bond pad probe mark area

Semiconductor device and manufacturing method of the same

A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of plural memory cells. The semiconductor device which functions as a microcomputer chip also has a processing unit and includes an input terminal for receiving an operation mode signal for switching the microcomputer between a first operation mode in which the flash memory is rewritten under control of a processing unit and a second operation mode in which the flash memory is rewritten under control of separate writing circuit externally connectable to the microcomputer.

Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein

A burn-in process for a semiconductor integrated circuit device includes a first process of positioning bump electrodes of the semiconductor integrated circuit device with respect to pads of a socket having detachment mechanisms, a second process of pressing the bump electrodes against the pads by weighting the semiconductor integrated circuit device, and a third process of detaching the bump electrodes from the pads by exerting force on the semiconductor integrated circuit device in a direction opposite to a weighting direction of the second process. Automatic insertion and detachment of a semiconductor integrated circuit chip in a burn-in test is facilitated by detaching the bump electrodes from the pads by pushing up the semiconductor integrated circuit device.

Method for manufactuing a semiconductor integrated circuit device

A cylindrical roller bearing includes an inner ring having a flange portion provided with a roller guide-surface which guides the end facesof the cylindrical rollers having diameter of Da. The end faceaway from a center axis of the cylindrical roller by 0.40 Da in the radial direction is a first position A, and the end faceaway from the center axis by 0.35 Da is a second position B, the end facecontacts with the roller guide-surface between the first and second positions A and B, the end facehas a convex-shaped crowning portionhaving a continuous curve which passes the first and second positions A and B, and an angle &#x3b1; formed between a line connecting the first and second positions A and B and a line perpendicular to the center axis is set to be 0.5&#xb0; or less.

Cylindrical roller bearing

Growing community of inventors

Tokyo, Japan

Masanao Sato