Murata Manufacturing Co., Ltd.

Konica Minolta Opto, Inc.

Masanaga Nishikawa

Masaya Ueda

Toshio Nishimura

Hiroshi Nakatani

Seigo Hayashi

Kimitoshi Nakamura

Tomoharu Sato

Tamotsu Minamitani

Koji Shinmura

Tetsuo Takeshima

Takashi Hase

Tomoyuki Yuasa

Kazuo Shima

Kenji Tomaki

Shinji Amaike

Tadashi Yoda

Sachio Kitagawa

Kenichi Takahashi

Kazuhiko Sashisaki

A piezoelectric actuator that includes a piezoelectric substrate, first and second electrodes, and a conductive layer. The first and second electrodes are configured to apply a voltage to the piezoelectric substrate. The conductive layer is formed on the first electrode. The conductive layer is made of a metal or an alloy different in color from the second electrode.

Piezoelectric actuator and drive device

A method of manufacturing a piezoelectric element, which includes a first electrode adjacent a first main surface of a mother piezoelectric substrate and a second electrode adjacent a second main surface. During formation of the first electrode and the second electrode, cutouts are provided in the first electrode and the second electrode so that the shapes of the first electrode and the second electrode are different from each other when the mother piezoelectric substrate is inverted.

Manufacturing method for piezoelectric element and mother piezoelectric substrate with electrode

An electromechanical transducer that includes an elongating/contracting member and a driving member. The elongating/contracting member elongates and contracts in response to application of a voltage thereto. The elongating/contracting member has a side surface that is parallel to an elongation/contraction direction. The driving member is provided on the side surface of the elongating/contracting member. The driving member is displaced with elongation and contraction of the elongating/contracting member.

Electromechanical transducer and actuator

A magnetic head driving piezoelectric ceramic actuator having an actuator body and a coating layer. The actuator body has a piezoelectric ceramic substrate and first and second electrodes. The piezoelectric ceramic substrate has first and second principal surfaces, first and second side surfaces, and first and second edge surfaces. The first electrode has a first external electrode portion formed on a part of the first principal surface, and a second external electrode portion formed on the first edge surface. The second electrode has a third external electrode portion formed on the second edge surface, and a fourth external electrode portion formed on the first principal surface. Each of: at least a part of each of the first and second external electrode portions; and at least a part of each of the third and fourth external electrode portions, constitutes a joined portion mounted on the substrate by an electrically-conductive agent. The coating film covers at least a part of a surface of a portion of the actuator body other than the joined portions.

Magnetic head driving piezoelectric ceramic actuator

An electromechanical conversion element having high connection reliability and an actuator equipped with the electromechanical conversion element. The electromechanical conversion element includes: a displacement part capable of expanding and contracting by application of voltage and having electrode forming faces and an adhesion face which are disposed adjacent to each other; and external electrodes on the electrode forming faces, in which lead electrodes for applying voltage to the displacement part are bonded to bonding regions provided in the external electrodes, and a driven member capable of being driven by the expansion and contraction of the displacement part is bonded to the adhesion face by an adhesive. The electromechanical conversion element further includes bleed flow blocking parts on the electrode forming faces at points closer to the adhesion face than ends of the bonding regions located on the same side as the adhesion face.

Electromechanical conversion element and actuator

A piezoelectric power generating device includes a power generating element and a package member. The power generating element includes a plate-like piezoelectric element and a metal plate. The piezoelectric element has a pair of principal surfaces opposite each other. The metal plate is bonded to one of the principal surfaces of the piezoelectric element. The package member has a supporting part and a restricting part. The supporting part supports an end of the power generating element in a cantilevered manner. The restricting part is disposed opposite the piezoelectric element with the metal plate interposed therebetween. The restricting part restricts displacement of the power generating element toward the outside of the metal plate.

Piezoelectric power generating device

An ultrasonic sensor includes a cylindrical casing having a bottom portion. The casing has a piezoelectric element on a bottom surface thereof. A substrate is attached to an end surface of an opening portion of the casing with a damping member provided therebetween such that the damping member covers the opening portion. Pin terminals are arranged so as to extend through the substrate and the damping member and are electrically connected to the piezoelectric element with lead wires. An inner space of the casing is filled with foamable resin.

Ultrasonic sensor and method for manufacturing the same

An ultrasonic sensor includes a cylindrical case with a bottom. A piezoelectric element is bonded to an inner side of a bottom portion of the case, and a felt is bonded to the piezoelectric element. A cap is fitted to an opening of the case. The cap includes a fixing portion and a substrate which is harder than the fixing portion. Terminals are press-fitted to the substrate. Wires are connected to the terminals, so that the terminals are electrically connected to the piezoelectric element. A through hole is provided in the fixing portion. Resin before being foamed is injected from the through hole and then foamed, so that the case is filled with foamable resin while an excess amount of foamable resin is pushed out from the through hole.

Ultrasonic sensor

A magnetoresistive device disposed in an elongated magnetic sensor, for example, has two parallel arrays of magnetosensitive elements arranged at regular intervals in the longitudinal direction. The magnetosensitive elements are connected in series through connection conductors, in a meandering pattern. The magnetoresistive device is disposed between two other magnetoresistive devices. The magnetoresistive devices are arranged such that the intervals between the magnetosensitive elements disposed at the ends of a magnetoresistive in the longitudinal direction and the opposed magnetosensitive elements of the magnetoresistive devices, respectively, are equal to the intervals between the magnetoresistive elements within the magnetoresistive devices.

Elongated magnetic sensor

A multistage switch includes a switch push button. A magnet is disposed in a recess of the inner wall surface of the switch push button. The multistage switch further includes a magnetic sensor, and the magnetic sensor includes a substrate. Two magnetoelectric transducers are mounted on a surface of the substrate, and are disposed so as to face the magnet.

Multistage switch

A plurality of magnetosensitive portions of a plurality of magnetic resistance elements and a plurality of magnets are aligned substantially linearly to be perpendicular to a moving direction of a detection object, and directions of magnetic poles of the magnets are alternately inversed, such that directions of magnetic fluxes, which are perpendicular to a surface on which the magnetosensitive portions of the magnetic resistance elements are arranged, of the continuously disposed magnets, are alternately inverse.

Long magnetic sensor

A method for manufacturing a semiconductor thin film having high carrier mobility, and a magnetoelectric conversion element provided with the semiconductor thin film manufactured by the aforementioned method are provided. The temperature of the Si single crystal substrate is raised to 270&#xb0; C. to 320&#xb0; C., and an In buffer layer is formed by an electron beam heating type vacuum evaporation method. Subsequently, an initial seed layer made of Sb and In is formed. The temperature of the Si single crystal substrate is raised to 460&#xb0; C. to 480&#xb0; C., and thereafter, a retention time approximated by a predetermined function of the temperature of the Si single crystal substrate is provided. Then, a main growth layer made of Sb and In is formed.

Method for manufacturing semiconductor thin film, and magnetoelectric conversion element provided with semiconductor thin film thereby manufactured

A method for manufacturing a semiconductor thin film having high carrier mobility, and a magnetoelectric conversion element provided with the semiconductor thin film manufactured by the aforementioned method are provided. The temperature of the Si single crystal substrate is raised to 270&deg; C. to 320&deg; C., and an In buffer layer is formed by an electron beam heating type vacuum evaporation method. Subsequently, an initial seed layer made of Sb and In is formed. The temperature of the Si single crystal substrate is raised to 460&deg; C. to 480&deg; C., and thereafter, a retention time approximated by a predetermined function of the temperature of the Si single crystal substrate is provided. Then, a main growth layer made of Sb and In is formed.

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Kanazawa, Japan

Masanaga Nishikawa