Nippon Steel & Sumikin Materials Co., Ltd.

Nippon Micrometal Corporation

Nippon Steel Sumitomo Metal Corporation

Nippon Steel Corporation

Waseda University

Nippon Steel Chemical & Material Co., Ltd.

Nippon Stell & Sumikin Materials Co., Ltd.

Masamoto Tanaka

Takayuki Kobayashi

Shinichi Terashima

Katsuichi Kimura

Tsutomu Sasaki

Jun Maki

Masao Kurosaki

Keiichi Kimura

Shinji Ishikawa

Shuji Nagasaki

Michio Endo

Masami Fujishima

Hideaki Suda

Wataru Ohashi

Kohei Tatsumi

Mitsuru Morita

Eiji Hashino

Seiki Takebayashi

Sukeyoshi Yamamoto

Kiyoshi Sawano

Katsuyoshi Miyamoto

Kazuto Kawakami

Tadayuki Sagawa

Masayoshi Fujishima

Kiyotsugu Komori

Norie Matsubara

Keisuke Akashi

Katsuhiko Hoshino

Tsunekazu Yamazaki

Kensuke Misawa

Provided is a joint structure. The joint structure includes a first structure, and a second structure joined to the first structure via a joint portion formed of a Au—Sn-based alloy, wherein a thickness of the joint portion is 3 μm or more and 50 μm or less.

Junction structure, method for manufacturing junction structure, and solder ball

The present invention can give a joining structure using metal nanoparticles to join the same types or different types of metal where when one surface metal is Al based, the parts are joined through a joining layer containing Ni nanoparticles, whereby a good joining strength is obtained. Further, by using two joining layers () including metal nanoparticles to sandwich metal foil () so as to form a joining layer and joining the same type or different types of surface metals (-) through this joining layer, it is possible to ease the thermal stress due to the difference in amounts of thermal expansion of joined members which have two surface metals.

Metal joining structure using metal nanoparticles and metal joining method and metal joining material

A metal foil including: a steel layer whose thickness is 10 to 200 &#x3bc;m; an Al-containing metal layer arranged on the steel layer; and plural granular alloys which exist in an interface between the steel layer and the Al-containing metal layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 &#x3bc;m, is absent on the contour curve, and wherein, when an equivalent sphere diameter of the granular alloys is x in units of &#x3bc;m and a thickness of the Al-containing metal layer is T in units of &#x3bc;m, the granular alloys satisfy x&#x2266;0.5T.

Metal foil for base material and producing method thereof

A metal tape material contains a metal having face centered cubic lattice structure, in which metal tape material an area fraction Aof a preferentially &#x3c;100&#x3e;oriented region are within an orientation difference of 15&#xb0; C. relative to a thickness direction of the metal tape material and further within an orientation difference of 15&#xb0; C. relative to a first in-plane direction of the metal tape material is 60% or greater and not greater than 100%, and, where an area fraction of a preferentially &#x3c;212&#x3e;oriented region are within an orientation difference of 15&#xb0; relative to the thickness direction and further within an orientation difference of 15&#xb0; relative to the first in-plane direction is defined as A, the total of the area fraction of the preferentially &#x3c;212&#x3e;oriented region and the area fraction of the preferentially &#x3c;100&#x3e;oriented region, A+A, is greater than 70% and not greater than 100%.

Metal tape material and interconnector for solar module current collection

A solder ball which suppresses generation of voids in a joint, excels in a thermal fatigue property, and can also obtain a good drop impact resistance property, and an electronic member using the same are provided. The solder ball is formed of a Sn&#x2014;Bi type alloy containing Sn as a main element, 0.3 to 2.0 mass % of Cu, 0.01 to 0.2 mass % of Ni, and 0.1 to 3.0 mass % of Bi, and an intermetallic compound of (Cu, Ni)Snis formed in the Sn&#x2014;Bi alloy so that the generation of voids in the joint when being jointed to an electrode is suppressed, a thermal fatigue property is excellent, and a good drop impact resistance property can also be obtained.

Solder ball and electronic member

A metal foil including: a steel layer whose thickness is 10 to 200 &#x3bc;m; an alloy layer which contains Fe and Al and which is formed on the steel layer; and an Al-containing metal layer arranged on the alloy layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 &#x3bc;m, is absent on the contour curve, and a thickness of the alloy layer is 0.1 to 8 &#x3bc;m and the alloy layer contains an AlCuFe intermetallic compound or FeAlbased intermetallic compounds.

Metal foil for base material

The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 &#x3bc;m as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball.

Solder ball for semiconductor packaging and electronic member using the same

According to a lead-free solder bump bonding structure, by causing the interface (IMC interface) of the intermetallic compound layer at a lead-free-solder-bump side to have scallop shapes of equal to or less than 0.02 [portions/&#x3bc;m] without forming in advance an Ni layer as a barrier layer on the surfaces of respective Cu electrodes of first and second electronic components like conventional technologies, a Cu diffusion can be inhibited, thereby inhibiting an occurrence of an electromigration. Hence, the burden at the time of manufacturing can be reduced by what corresponds to an omission of the formation process of the Ni layer as a barrier layer on the Cu electrode surfaces, and thus a lead-free solder bump bonding structure can be provided which reduces a burden at the time of manufacturing in comparison with conventional technologies and which can inhibit an occurrence of an electromigration.

Lead-free solder bump bonding structure

A lead-free solder alloy exhibiting good performance in impact resistance and vibration resistance. Also provided are a solder ball using such a lead-free solder alloy, and an electronic member having a solder bump using such a lead-free alloy. Specifically, the lead-free solder alloy consists of 1.0 to 2.0% by mass of Ag, 0.3 to 1.0% by mass of Cu, 0.005 to 0.1% by mass of Ni and the balance including Sn and unavoidable impurities. In an Sn&#x2014;Ag&#x2014;Cu based solder joint portion on a Cu electrode, a CuSn intermetallic compound layer is formed directly on the Cu electrode, and then a CuSnintermetallic compound layer is formed thereon. A Cu atomic site in the CuSnintermetallic compound layer is replaced by Ni having a smaller atomic radius than Cu to thereby reduce strain in the CuSnintermetallic compound layer, thus enabling impact resistance and vibration resistance to be improved therein.

Lead-free solder alloy, solder ball and electronic member, and lead-free solder alloy, solder ball and electronic member for automobile-mounted electronic member

To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250&#xb0; C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250&#xb0; C.

Solder alloy, solder ball and electronic member having solder bump

A manufacturing method of minute metallic spheres of the present invention comprises a heating means for heating and melting a metal to form a metallic sphere, a measurement means for measuring the injected molten metal into a predetermined volume, and a cooling means for cooling the molten metal discharged from the measurement means, to a temperature less than the melting point. The measurement means has a gauger of a predetermined volume in which the molten metal is injected, and is constructed such that the molten metal is cut by rubbing by the predetermined volume by sliding this gauger in contact. The molten metal is injected in the gauger of the predetermined volume to measure, and the measured molten metal is discharged from the gauger to cool to a temperature less than the melting point, and solidified into a sphere in the cooling process.

Method and apparatus for manufacturing minute metallic sphere

Oxide superconductor and process for preparation thereof

Growing community of inventors

Tokyo, Japan

Masamoto Tanaka