Seiko Epson Corporation

California Institute of Technology

Masamitsu Uehara

Masayasu Miyata

William A Goddard, Iii

Juri Kato

Makoto Katase

Satoshi Kinoshita

Makoto Matsuzaki

Masamitsu Shimazu

Yuji Shinohara

Takashi Shinohara

Yuzuru Sato

Kenichi Kanbayashi

Hideaki Oka

Tsuyoshi Obikawa

Ryuji Ishii

Masakazu Shinozuka

Gyeong S Hwang

An electronic device having an intermediate layer which can transfer smoothly carriers between two layers adjacent to the intermediate layer and having improved properties, and electronic equipment having high reliability are provided. An electronic device includes a pair of electrodes and laminated layers provided between the electrodes. The laminated layers include a hole transport layer (first organic semiconductor layer), a light emitting layer (second organic semiconductor layer), and an intermediate layer provided between the first and second organic semiconductor layers so as to make contact with both of the hole transport layer and the light emitting layer. The intermediate layer is constituted of a compound represented by a general formula A-B-A. In this formula, each of the Aand Ais a group including at least one of a primary amino group, a secondary amino group, a tertiary amino group, a hydroxyl group, a carbonyl group and a carboxyl group, the Aand Aare the same or different, and optionally simultaneously exist, and the B is a group including a fluorene ring. Molecules of the compound are oriented in a state that each group Aand each group Aare positioned on the side of the hole transport layer and each group B is positioned on the side of the light emitting layer.

Electronic device and electronic equipment provided with the electronic device

A substrate for an electronic device having high carrier transport ability, a method for manufacturing a substrate for an electronic device which can manufacture such a substrate for an electronic device, an electronic device provided with the substrate for an electronic device and having improved properties, and electronic equipment having high reliability are provided. A substrate for an electronic device includes a light emitting layer (organic semiconductor layer), a cathode (inorganic layer), and an intermediate layer provided between the light emitting layer and the cathode so as to make contact with both of the light emitting layer and the cathode. The intermediate layer is constituted of a compound (1) represented by a general formula R&#x2014;X&#x2014;O-M as a main component thereof. In the general formula, the R is a hydrocarbon group, the X is any one of binding groups comprising a single bond, a carbonyl group and a sulfonyl group, and the M is any one of a hydrogen atom and a metal atom. Molecules of this compound (1) are oriented along a thickness direction of the intermediate layer in a state that each hydrocarbon group R is positioned on the side of the light emitting layer and each atom M is positioned on the side of the cathode.

Substrate for electronic device, method for manufacturing the substrate for electronic device, electronic device provided with the substrate for electronic device, and electronic equipment provided with the electronic device

A light emitting device includes a cathode, an anode, a light emitting layer provided between the cathode and the anode, an intermediate layer provided between the cathode and the light emitting layer so as to be in contact with both the cathode and the light emitting layer. The intermediate layer includes a base in the form of a layer, the base being constituted of a metal oxide based semiconductor material as a main component thereof and having a first surface which is in contact with the light emitting layer and a second surface opposite to the first surface, and a dye carried on the first surface of the base and inner surfaces of pores formed in the base so as to be in contact with the light emitting layer. By using the light emitting device mentioned above, it is possible to improve properties of the light emitting device such as luminous efficiency and the like. A method for manufacturing such a light emitting device is also provided. An electronic device provided with such a light emitting device is also provided. Electronic equipment provided with such an electronic device is also provided.

Light emitting device, method for manufacturing the light emitting device, electronic device provided with the light emitting device and electronic equipment provided with the electronic device

A gate insulating filmis formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating filmcontains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cmis less than both the absorbance of infrared radiation at the wave number of 830 cmand the absorbance of infrared radiation at the wave number of 900 cmwhen the insulating film to which an electric field has never been applied is measured by means of Fourier Transform Infrared Spectroscopy at room temperature. Further, in the case where the absolute value of the difference between the absorbance of infrared radiation at the wave number of 830 cmand the absorbance of infrared radiation at the wave number of 770 cmis defined as A and the absolute value of the difference between the absorbance of infrared radiation at the wave number of 900 cmand the absorbance of infrared radiation at the wave number of 990 cmis defined as B, then A and B satisfy the relation: A/B is 1.8 or more.

Method for evaluating a gate insulation film characteristic for use in a semiconductor device

A method for manufacturing a semiconductor device includes forming a SiGe layer on a Si substrate, forming a dummy pattern to expose a surface of the Si substrate, and wet etching the SiGe layer while an etchant is contacted with, the dummy pattern.

Method for manufacturing semiconductor device

An semiconductor device () of the invention includes a semiconductor substrate provided with a channel region (), a source region () and a drain region (), a gate insulating film () laminated on the channel region (), and a gate electrode (). The gate insulating film () is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cmis 0.02 or less when the gate insulating film () to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.

Semiconductor device, electronic device and electronic apparatus

An organic EL device with a voltage applied across an anode and a cathode so that holes are moved in a hole transport layer and electrons are moved in an electron transport layer, and the holes and the electrons are recombined in a light emitting layer to emit light. The light emitting layer is formed of light emitting material having one or more kinds of metallic impurities. By using such a light emitting material, the decrease of light-emission luminance of the organic EL device can be suppressed.

Light emitting material, method of manufacturing the light emitting material and method of manufacturing light emitting layer

Techniques for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material can be implemented in hardware or software. Fundamental data for a set of microscopic processes that can occur during one or more material processing operations is obtained. Such data can include data representing the kinetics of processes in the set of microscopic processes and the energetics and structure of possible states in the material processing operations. From the fundamental data and a set of external conditions, distributions of dopant and defect components in the substrate lattice are predicted. The distributions of one or more fast components are each predicted by calculating the concentration of the particular fast component for a time period before that fast component reaches its pseudo steady state by solving a first relationship and calculating the concentration of that fast component after the time period by solving a second relationship based on other components, the pseudo steady state of a fast component being a state in which the concentration of that fast component is determined by concentrations of other components. The distribution of BsBi, in addition to the distributions of Bs, BsI, BsI, BsI, BsBi, BsBi, BsBi, BsBiI, BsBiI, BsBi, BsBi, I and I, are calculated by solving the first relationship to predict the distribution of boron after annealing, where Bs and Bi represent substitutional boron and interstitial boron, respectively, and I and Irepresent interstitial silicon and a cluster of n I's, respectively.

Method for predicting the behavior of dopant and defect components

A dispersion medium, for dispersing electrophoretic particles in an electrophoretic display device, contains an organic compound having two or more rings in its structural formula, where the organic compound comprises at least about 30% by weight of the dispersion medium. The thus constituted dispersion medium improves the reliability and response of the electrophoretic device. The organic compound comprises one or more of the materials defined by the structural formulae (1) to (4), wherein each of A1 to A6, C1, and C2 are ring compounds.

Electrophoretic display device

An ink composition particularly well suited for use in an ink jet printer wherein the ink is jetted at temperatures higher than room temperature. The ink composition includes a metallic complex solvent dye coloring material dispersed in a vehicle of at least one high molecular weight alkyl amine, at least one high molecular weight fatty acid and carnauba wax.

Growing community of inventors

Shiojiri, Japan

Masamitsu Uehara