Kabushiki Kaisha Toshiba

Masamitsu Oshikiri

Seiji Yamada

Kiyomi Naruke

Tomoko Suzuki

Etsushi Obi

In this invention, charges are extracted from the charge storage portion by means of F-N tunnel current, and then avalanche hot carriers are injected into the storage portion.

Semiconductor memory device having data erasing mechanism

Method of operating a nonvolatile semiconductor memory device

A nonvolatile semiconductor memory device comprises a memory cell array including memory cell transistors having a lamination gate structure are arranged in a matrix manner at the position where a word line and a bit line cross each other. A lower voltage than a threshold voltage is applied to the word line selected at the time of a reading mode in a state that no electrical charge is stored in the floating gate.

Growing community of inventors

Sagamihara, Japan

Masamitsu Oshikiri