Seiko Epson Corporation

Shinshu University

Masamitsu Inoue

Taketomi Kamikawa

A transistor including a first gate electrode, a second gate electrode, a first gate insulating layer disposed between the first gate electrode and the second gate electrode, a first interlayer disposed between the first gate insulating layer and the second gate electrode and containing a first organic material, an organic semiconductor layer disposed between the first interlayer and the second gate electrode, a second gate insulating layer disposed between the organic semiconductor layer and the second gate electrode, and a source electrode and a drain electrode disposed between the first interlayer and the second gate insulating layer and injecting carriers into the organic semiconductor layer, wherein an ambipolar property is imparted to a part of the organic semiconductor layer that contacts with the first interlayer under an action of the first interlayer.

Growing community of inventors

Suwa, Japan

Masamitsu Inoue