Hitachi, Ltd.

Hitachi Power Semiconductor Device, Ltd.

Hitachi Haramichi Electronics Co., Ltd.

Masamitsu Inaba

Mutsuhiro Mori

Katsunori Azuma

Kenichiro Nakajima

Masahiro Iwamura

Shinji Shirakawa

Tatsumi Yamauchi

Keiichi Mashino

Kinya Nakatsu

Toru Masuda

Yoshitaka Sugawara

Keisuke Horiuchi

Satoru Shigeta

Katsuaki Saito

Daisuke Kawase

Hidetoshi Arakawa

Masanori Tsuchiya

Yuji Takayanagi

Seiichi Hayakawa

Keiji Kunii

Daisuke Ikarashi

The invention provides a gate drive device, a gate drive method, a power semiconductor module, and an electric power conversion device capable of reducing a negative gate surge voltage. The gate drive device drives a semiconductor device constituting an arm in an electric power conversion device. Before a turn-off start of a drive arm, in a counter arm, a voltage between one main terminal of the semiconductor device and a gate terminal of the semiconductor device is charged to a voltage value that is larger, in a positive direction, than a negative voltage of a negative gate power supply and smaller than a gate threshold voltage of the semiconductor device.

Gate drive device, gate drive method, power semiconductor module, and electric power conversion device

A semiconductor power module with which it is possible to suppress the influence of noise given from a main terminal to a control terminal is provided. At least any one of main terminals (positive electrode terminal, negative electrode terminal, alternating current terminal) is so configured that the main terminal includes two parts extended in a common direction. The two parts are, for example, formed of a single component having such as a shape that the component is bifurcated from the outside toward the inside of the semiconductor power module or two different components. The two parts are so structured that the parts are extended in a common direction. Control terminals (gate signal terminal and emitter signal terminal) are so arranged that a laminated portion of the control terminals is sandwiched between one and the other of the two parts to configure the semiconductor power module.

Semiconductor power module and power conversion apparatus using the same

A power converter structure in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The power converter structure includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.

Power converter

A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.

A power converter is disclosed in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The power converter includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors, which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.

Capacitor module

A power converter in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The power converter includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.

The present invention provides a power module, power converter, and vehicular electric machine system capable of reducing inductance of a peripheral section of an output terminal in a power module, and additionally, reducing a surge voltage. A positive emitter conductorconnected to an emitter electrode of a positive power semiconductor element Mpu and an output terminal U are electrically interconnected by using a plurality of aluminum wires, a negative collector conductorconnected to a collector electrode of a negative power semiconductor element Mnu and the output terminal U are electrically interconnected by using a plurality of aluminum wires, and the positive emitter conductorconnected to the emitter electrode of the positive power semiconductor element Mpu and the negative collector conductorconnected to the collector electrode of the negative power semiconductor element Mnu are further electrically interconnected by using a plurality of aluminum wires

Power module, power converter, and electric machine system for mounting in vehicle

V-phase upper-arm open phase detecting circuit outputs a permission signal to allow U-phase lower-arm MOSFET to be conductive when the V-phase voltage is higher than the positive electrode potential. In response to this permission signal, U-phase lower-arm driver circuit drives U-phase lower-arm MOSFET. V-phase lower-arm open phase detecting circuit outputs a permission signal to allow U-phase upper-arm MOSFET to be conductive when the V-phase voltage is lower than the negative electrode potential. In response to this permission signal, U-phase upper-arm driver circuit drives U-phase upper-arm MOSFET. Thereby, a MOS rectifying device capable of rectifying even when an open phase occurs, a driving method thereof, and a motor vehicle using thereof can be provided.

MOS rectifying device, driving method thereof, and motor generator and motor vehicle using thereof

A generator having a field coil L, and an SWcontrol circuitfor controlling field current flowing through the field coil L. When a generating operation of the generator is to be ended, a switchSWis turned off to interrupt the field current flowing through the field coil L, and a switchSWis turned off to allow the field current remaining the field coil L to the current path including a resistance elementwith a resistance element capable of quickly attenuating the field current.

Generating apparatus and motor control apparatus

An interface circuit capable of reliably transmitting signal even when there is fluctuation in the potential difference in reference potentials between circuits between which signal transmission is carried out. An interface circuitis comprised of a level shift circuitand a potential selection circuitfor selecting the potential of a power supply voltage for operating the level shift circuitThe potential selection circuitselects one of a plurality of input potentials. The level shift circuitreceives a voltage pulse having a first potential as reference potential and outputs a voltage pulse having a second potential as reference potential. The level shift circuitis operated on the basis of both a potential difference between the output potential from the potential selection circuit and the first potential and a potential difference between the selected potential and the second potential.

Interface circuit, power conversion device, and vehicle-mounted electric machinery system

An inverter device is mounted on the rotating electric machine body The inverter device includes a module unit having a converter circuit and a control unit that controls the operation of the converter circuit. The converter circuit is configured by connecting a plurality of the following series circuits in parallel, each of the series circuits includes a P-channel MOS semiconductor device disposed at a higher potential side and an N-channel MOS semiconductor device disposed at a lower potential side which are electrically connected in series. An electric power that is supplied from a battery or an electric power that is supplied to the battery is controlled.

Vehicle rotating electric machine

A semiconductor device includes an emitter region, a collector region provided directly under the emitter region, and a two-region base structure. The first base region is interposed between the emitter and collector regions, and the second base region supports the collector region. The aforementioned regions have a progressively higher impurity concentrations, with the collector region having an impurity concentration higher than that of the first base region, the second base region having an impurity concentration higher than that of the collector region, and the emitter region having an impurity concentration higher than that of the base region. Also included is a resistance region formed, in one embodiment, from a projecting end portion of one of the base layers. The projecting end portion of the base is fabricated so that both base portions contact one another in the resistance region, and consequently both base portions are of the same potential. Electrodes are also provided for ohmicly contacting the emitter, collector, and base regions. The two-region base structure enables the device to achieve a high resistance, and thus to achieve simultaneously a high breakdown voltage and a high frequency (speed) characteristic.

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Hitachi, Japan

Masamitsu Inaba