Tdk Corporation

Maeda & Suzuki Patent Co., Ltd.

Masamitsu Haemori

Hitoshi Saita

Masahito Furukawa

Toshio Asahi

Hiroki Uchiyama

Taku Masai

Wakiko Sato

Saori Takahashi

Junichi Yamazaki

Yuko Saya

Kouhei Ohhashi

A dielectric film includes a main component of a complex oxide represented by a general formula of (SrCa)TiO. 0.40&#x2264;x&#x2264;0.90 and 0.90&#x2264;y&#x2264;1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2&#x3b8; of 32&#xb0; or more and 34&#xb0; or less to an intensity of a diffraction peak appearing at a diffraction angle 2&#x3b8; of 46&#xb0; or more and 48&#xb0; or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-K&#x3b1; ray as an X-ray source is 3.00 or more.

Dielectric film, dielectric element, and electronic circuit board

The present invention provides a dielectric composition having high relative permittivity and insulation resistance at high temperature. The dielectric composition includes a main component expressed by a compositional formula (Sr, Ca)(TiHf)ON, in which 0&#x3c;x&#x2264;0.15, 0&#x3c;y&#x2264;0.15, 0.90&#x2264;m&#x2264;1.15, and 0&#x3c;&#x3b4;&#x2264;0.05 are satisfied.

Dielectric composition, dielectric thin film, dielectric element, and electronic circuit board

To provide a dielectric composition having excellent reliability. The dielectric composition contains a main component represented by a composition formula (SrCa)(TiHf)ON, in which 0.15&#x3c;x&#x2264;0.90, 0&#x3c;y&#x2264;0.15, 0.90&#x2264;m&#x2264;1.15, 0&#x3c;&#x3b4;&#x2264;0.05 are satisfied.

A dielectric film may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after film formation. The inventors have newly found that when a dielectric film includes Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)Ois provided and satisfies at least one between relationships such that degree of orientation of (100) plane is higher than degree of orientation of (110) plane, and degree of orientation of (111) plane is higher than degree of orientation of (110) plane in a film thickness direction, the dielectric film is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 &#x3bc;m square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

Dielectric thin film, dielectric element and electronic circuit board

A dielectric membrane may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after membrane formation. The inventors have newly found that when a dielectric membrane includes Ca having a lower ionization tendency than Ba and Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)Oand satisfies at least one of degree of orientation of (100) plane&#x3e;degree of orientation of (110) plane and degree of orientation of (111) plane&#x3e;degree of orientation of (110) plane in a membrane thickness direction, the dielectric membrane is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

Dielectric membrane and dielectric element

Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of BiMeO.

Piezoelectric composition and piezoelectric device

The present invention aims to provide a piezoelectric composition and a piezoelectric element containing the piezoelectric composition. In the piezoelectric composition, the main component contains a substance represented by the following formula with a perovskite structure,(BiNa)(TiMgAlCo)O0.15&#x2266;x&#x2266;0.7, 0.28&#x2266;y&#x2266;0.75, 0.02&#x2266;z&#x2266;0.30, 0.17&#x2266;k&#x2266;0.83, 0.75&#x2266;m&#x2266;1.0, and x+y+z=1.

Growing community of inventors

Tokyo, Japan

Masamitsu Haemori