Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Masamichi Yachi

Takayuki Nakada

Masanori Okuno

Masakazu Sakata

Toshihiko Yonejima

According to one aspect of the technique, there is provided a processing apparatus including: a process structure including: a process furnace, in which an object to be processed is processed by a gas, provided in a housing; and an opening configured to enable a maintenance and provided at a rear side of the housing; an exhaust structure configured to allow a maintenance region to be provided at a region facing the opening and to exhaust the gas from the process furnace; and an exhaust apparatus configured to secure the maintenance region at the region facing the opening and placed in contact with a side of the exhaust structure opposite to the process structure.

Processing apparatus and exhaust system

Described herein is a technique capable of adjusting an inner pressure of a process chamber into a high vacuum state in a short time. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a main exhaust line including a first pipe, a first opening degree adjusting valve, an opening/closing valve and a pressure sensor; a bypass exhaust line including a second pipe and a second opening degree adjusting valve; and a controller configured to adjust an inner pressure of the process chamber by: (a) adjusting an opening degree of the second opening degree adjusting valve; (b) closing the second opening degree adjusting valve and opening the opening/closing valve and the first opening degree adjusting valve; and (c) closing the opening/closing valve and the first opening degree adjusting valve and adjusting the opening degree of the second opening degree adjusting valve.

Substrate processing apparatus capable of adjusting inner pressure of process chamber thereof and method therefor

The present invention shortens the time needed to decrease the oxygen concentration in a chamber to be filled with an inert gas to a desired concentration. A substrate processing apparatus includes: a processing chamber configured to process a substrate; and a carrying chamber configured to carry the substrate to the processing chamber. The carrying chamber includes: a plurality of wall bodies configured to form a housing of the carrying chamber; a joint at which the plurality of wall bodies are joined; an isolated space creating member configured to cover the joint and thereby create an isolated space separated from the carrying chamber; and an exhaust section configured to purge gas in the isolated space.

Growing community of inventors

Toyama, Japan

Masamichi Yachi