Nec Corporation

Other

Hitachi, Ltd.

Hitachi Device Engineering Co., Ltd.

Renesas Technology Corp.

Ttpcom Limited

Masamichi Tanabe

Katsuyoshi Washio

Masao Kondo

Katsuya Oda

Hiromi Shimamoto

Eiji Oue

Eiji Ohue

Reiko Hayami

Satoshi Tanaka

Taizo Yamawaki

Takahiro Nakamura

Robert Astle Henshaw

Toru Masuda

Hiroaki Matsui

Nobuhiro Shiramizu

Yasuyuki Okuma

Koichi Yahagi

Provided is an information processing system including: a voice information acquisition unit that acquires voice information including an utterance made by a person; a status acquisition unit that acquires status information related to status of the person; and a support information generation unit that generates support information used for supporting operation of the person based on the voice information and the status information.

Information processing system, information processing method, and storage medium

The present invention provides a semiconductor integrated circuit including an active mixer circuit that is operated at low voltage, low noise, and low power consumption. It includes a transconductance amplifier, a transformer, and a multiplier, connects a transformer between the transconductance amplifier and the multiplier, and separates between the transconductance amplifier and the multiplier with respect to direct current inside the transformer. Further, each of the tranconductance amplifier and the multiplier is configured of transistors that are single-stacked between the supply voltage terminal and ground terminal.

Active mixer circuit and a receiver circuit or a millimeter-wave communication unit using it

A transmitter is provided which includes a transmitting circuit that does not require a high-performance low noise VCO restricting cost reduction thereof and that can reduce the number of parts without requiring an RF filter. A direct conversion that does not require a transmission VCO is applied to the transmitting circuit. In order to achieve noise reduction in a receiving band, low-pass filters are provided a IQ input sections of a modulator that converts IQ signals into RF signals. In comparison with a conventional transmitter using offset PLL, an external VCO required in addition to an RF integrated circuit, a power amplifier, and a front end circuit is reduced. Even in current transistor performance, by using a filter having rapid waveform characteristics such as a SAW more inexpensive than the VCO, or the like, it is possible to provide a GSM/GSM 1800/GSM1900 triple band transmitter.

Direct-conversion transmitting circuit and integrated transmitting/receiving circuit

A bipolar transistor is provided which is of high reliability and high gain, and which is particularly suitable to high speed operation. The bipolar transistor operates with high accuracy and with no substantial change of collector current even upon change of collector voltage. It also has less variation than conventional bipolar transistors for the collector current while ensuring high speed properties and high gain. In one example, the band gap in the base region is smaller than the band gap in the emitter and collector regions. The band gap is constant near the junction with the emitter region and decreases toward the junction with the collector region. A single crystal silicon/germanium is a typically used for the base region.

Heterojunction bipolar transistor

A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si&mdash;Ge and a base leading-out electrode are connected via a link base made of polycrystal Si&mdash;Ge by doping at high concentration, further, a part immediately under the intrinsic base has the same conductive type as that of a collector and in a peripheral part, a single crystal Si&mdash;Ge layer having the same conductive type as that of a base is provided between the intrinsic base and a collector layer. Hereby, the reduction of the resistance of the link base between the intrinsic base and the base leading-out electrode and the reduction of capacitance between the collector and the base are simultaneously realized, and a self-aligned bipolar transistor wherein capacitance between an emitter and the base and capacitance between the collector and the base are respectively small, power consumption is small and high speed operation is enabled is acquired.

Bipolar transistor and manufacturing method thereof

Bipolar transistor and manufacting method thereof

Growing community of inventors

Tokyo, Japan

Masamichi Tanabe