Sony Corporation

Masamichi Ogawa

Kazuhiko Nemoto

Toyoharu Ohata

Akira Ishibashi

Yoshifumi Mori

A semiconductor device exploiting a quantum interference effect is disclosed. The device comprises: a rod-shaped semiconductor portion extending in one direction; a prism-shaped semiconductor portion covering side faces of the rod-shaped semiconductor portion and extending in the one direction; and one or more source electrodes and one or more drain electrodes electrically connected to opposite ends of the prism-shaped semiconductor portion. Channels extend in the one direction in the prism-shaped semiconductor portion along a plurality of sides of side faces thereof. Alternatively, the prism-shaped semiconductor portion has a twisted structure about an axis extending in the one direction, and channels each having a twisted structure extend in the one direction in the prism-shaped semiconductor portion along a plurality of sides of side faces thereof.

Semiconductor device exploiting a quantum interference effect

A light emitting element comprises a substrate having a {100} crystal face having a ridge extending in a &lt;001&gt; crystal axis direction, a first cladding layer formed on the ridge, an active layer formed on the first cladding layer, a second cladding layer formed on the active layer, a first electrode being electrically connected to the substrate, and a second electrode being electrically connected to the second cladding layer.

Semiconductor laser and method of manufacturing semiconductor laser

A light emitting element having a semiconductor substrate having {100} crystal surface as a major surface, a light emitting element formed on the semiconductor substrate, a growth blocking layer formed on a resonator end face of the light emitting element, a regrown layer formed on the light emitting element, a reflection mirror opposed to the resonator end face, a first electrode in contact with said semiconductor substrate, and a second electrode formed on the regrown layer, in which the regrown layer is made of the same material as that of the reflection mirror and the reflection mirror is formed of a semiconductor formed of {110} crystal surface epitaxially grown.

Apparatus for semiconductor laser

An optical semiconductor device in which both of positive input and negative input are possible is disclosed. In the optical semiconductor device, two heterojunction phototransistors are connected in parallel of each other to the cathode of a laser diode. An optical memory in which setting, i.e., writing and resetting, i.e., erasing by light are possible is also disclosed. In the optical memory, two heterojunction phototransistors are connected in parallel of each other to the cathode of a laser diode to make a memory cell.

Optical semiconductor device

A compound semiconductor device having a channel layer and an electron supply layer and using a two-dimensional electron gas. The channel layer near the interface between the channel layer and the electron supply layer is formed as a graded layer. It is possible to realize a compound semiconductor device which has good characteristics and which can be easily fabricated.

Growing community of inventors

Kanagawa, Japan

Masamichi Ogawa