Tokyo Electron Limited

Masamichi Nomura

Shigeru Kasai

Wataru Okase

Sumi Tanaka

Hiroyuki Miyashita

Tomohiro Suzuki

Hironori Yagi

Masatake Yoneda

Kazutsugu Aoki

Kenjiro Koizumi

Miwa Shimizu

A rotary floater () for supporting an object to be processed (W) is floated by the magnetic attraction of a floating electromagnet assembly (F), and the rotary floater () is rotated by the magnetic attraction of a rotary electromagnet assembly (R) while its horizontal position being controlled by the magnetic attraction of a positioning electromagnet assembly (H). The floating electromagnet assembly (F) causes the magnetic attraction to act vertically upwardly, so that the rotary floater () is floated and suspended without contact with the inner wall of a processing container ().

Processing apparatus

Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamberfor accommodating a wafer W; heating sourcesandincluding LEDsand facing the surface of the wafer W to irradiate light on the wafer W; light-transmitting membersandarranged in alignment with the heating sourcesandto transmit the light emitted from the LEDs; cooling membersandsupporting the light-transmitting membersandat opposite side to the processing chamberto make direct contact with the heating sourcesandand made of a material of high thermal conductivity; and a cooling mechanism for cooling the cooling membersandwith a coolant.

Annealing apparatus

A heat treating apparatus comprises a process chamber within which a wafer is subjected to a heat treatment. A supporting plate for supporting the wafer is arranged within the process chamber. A process gas is supplied from above into the process chamber. A main heating means for heating the wafer is arranged below the process chamber, with a transmitting window interposed therebetween. The main heating means includes a plurality of heating sources for irradiating the supporting plate with heat rays so as to heat the wafer indirectly and a rotatable table having the heating sources arranged on the front surface thereof. The heat treating apparatus also comprises an auxiliary heating means for compensating for an uneven temperature caused on the surface of the wafer by the main heating means. The heating source of the auxiliary heating means is arranged on the surface of the rotatable table together with the heating sources of the main heating means, and the heat output from the heating source of the auxiliary heating means can be controlled independently of the heat output from the heating sources of the main heating means.

Heating apparatus, and processing apparatus

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Nirasaki, Japan

Masamichi Nomura