Hitachi, Ltd.

Hitachi Ulsi Systems Co., Ltd.

Other

Renesas Technology Corp.

Masamichi Kobayashi

Shuji Ikeda

Hideo Miura

Norio Suzuki

Yasuko Yoshida

Hirohiko Yamamoto

Akira Takamatsu

Kazushi Fukuda

Shinichi Horibe

Hirofumi Shimizu

Yasushi Matsuda

Toshio Nozoe

Norio Ishitsuka

Hiroshi Naka

Masaaki Sawai

Shoji Hayashi

Masahiro Ichiki

Yoshihiko Okamoto

Satoshi Momose

A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Semiconductor device and process for producing the same

A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Semiconductor device and process for producing the sme

The reliability of a photomask is improved. The planar shape of a mask substrate of a resist shading mask having a shading pattern composed of a resist film is made circular.

Method of manufacturing photomask, photomask, and method of manufacturing semiconductor integrated circuit device

A silicon oxide film 2 which is exposed from a side wall of a groove 4a is etched to displace the silicon oxide film 2 backward toward an active region. The displacement amount is set to be equal to or more than a film thickness (Tr) of a silicon oxide film 5 to be formed on an inner wall of the groove 4a in a later thermal oxidation step and equal to or less than twice the film thickness (Tr) thereof. A shoulder portion of the groove 4a can be rounded by a low-temperature heat treatment at 1000.degree. C. or less, by controlling a heat treatment period such that the film thickness (Tr) of the silicon oxide film 5 is more than the film thickness (Tp) of the silicon oxide film 2 and equal to or less than three times the film thickness (Tr) thereof (Tp&lt;Tr.ltoreq.3Tp)

Method of manufacturing a semiconductor integrated circuit device

A light emitting device is disclosed which includes a semiconductor block, an active layer disposed in such a fashion as to penetrate through the mutually facing end surfaces of the semiconductor block, and an electrode disposed on the main plane of the semiconductor block, wherein the electrode consists of a first electrode portion disposed along the active layer, and a second electrode portion continuing integrally the first electrode portion and having the periphery thereof out of contact from the periphery of the second main plane of the semiconductor block. A current is caused to uniformly flow through the entire active layer, and a light emitting operation is carried out stably. Since the electrode is not disposed on the periphery of the semiconductor block, the occurrence of junction short-curcuit, which might otherwise occur when a wafer is cut off to produce laser chips or when the corners of the chip break off, can be reduced.

Light emitting device with improved electrode structure to minimize

A light emitting device is disclosed which includes a semiconductor block, an active layer disposed in such a fashion as to penetrate through the mutually facing end surfaces of the semiconductor block, and an electrode disposed on the main plane of the semiconductor block, wherein the electrode consists of a first electrode portion disposed along the active layer, and a second electrode portion continuing integrally the first electrode portion and having the periphery thereof out of contact from the periphery of the second main plane of the semiconductor block. A current is caused to uniformly flow through the entire active layer, and a light emitting operation is carried out stably. Since the electrode is not disposed on the periphery of the semiconductor block, the occurrence of junction short-circuit, which might otherwise occur when a wafer is cut off to produce laser chips or when the corners of the chip break off, can be reduced.

Growing community of inventors

Kodaira, Japan

Masamichi Kobayashi