Sharp Kabushiki Kaisha Corporation

National Institute for Materials Science

Ge Phosphors Technology, LLC

Masamichi Harada

Kenichi Yoshimura

Naoto Hirosaki

Hiroshi Fukunaga

Masatsugu Masuda

Kohsei Takahashi

Makoto Izumi

Kenji Terashima

Hitoshi Matsushita

Kazunori Annen

Yukari Inoguchi

Tadasu Izumi

Katsuhiko Kishimoto

Shigetoshi Ito

Shinji Yamaguchi

Hiroshi Tanaka

Yoshiki Sota

Yoshinobu Kawaguchi

Kazuo Tamaki

Toshiki Matsuoka

Masayuki Ohta

Masaki Tatsumi

Yuuichi Kanbayashi

Shin Ito

Tetsuo Uchikoshi

Hiroshi Umeda

Tomoshi Kimura

Hiroyo Segawa

Yoshifumi Inada

Yasuhiko Arai

The present invention provides a light emitting device that makes it possible to provide an image display apparatus having a wide color reproduction range. The light emitting device includes a light emitting element that emits blue light; a Mn-activated &#x3b3;-AlON phosphor that is a green phosphor; and a Mn-activated phosphor that is a red phosphor. The green light emitted by the Mn-activated &#x3b3;-AlON phosphor has an emission-spectrum peak wavelength of not less than 518 nm and not more than 528 nm.

Image display apparatus

A light emitting device of the present disclosure includes a light emitting section that generates fluorescence by receiving laser light, a reflection film that reflects laser light which is radiated to the vicinity of the light emitting section, among laser light which is emitted toward the light emitting section from a rod lens, and a reflection mirror that collects the laser light reflected by the reflection film, in the light emitting section.

Light emitting device

A wavelength converting member includes silica glass and a plurality of fluorescent material particles including an oxynitride or nitride fluorescent material and dispersed in the silica glass. The plurality of fluorescent material particles include at least two kinds of fluorescent material particles including (i) first fluorescent material particles that emit a fluorescence having a first peak wavelength and (ii) second fluorescent material particles that emit a fluorescence having a second peak wavelength. The wavelength converting member has a density within a range from 0.8 g/cmto 1.2 g/cm.

Wavelength converting member, light-emitting device, and method for producing wavelength converting member

In a light-emitting device, a 50%-area average diameter of primary particles of a Eu-activated &#x3b2; SiAlON fluorescent material is 10 &#x3bc;m or more, a scattering probability of scattering materials at a peak wavelength of excitation light emitted from an excitation light source is 0.1 mmor more and 0.5 mmor less, and the Eu-activated &#x3b2; SiAlON fluorescent material is entrapped inside a transparent member in a dispersed state together with the scattering materials.

Light-emitting device

A phosphor as a divalent europium-activated oxynitride green light emitting phosphor which is a &#x3b2;-type SiAlON substantially represented by a general formula (A): EuSiAlON(where a, b, c, d, and e are numbers satisfying 0.005&#x2266;a&#x2266;0.4, b+c=12, and d+e=16), and having an average particle size (d1) (determined by an air permeability method) of 9 to 16 &#x3bc;m, a median diameter (50% D) in particle size distribution of 12.5 to 35 &#x3bc;m, 50% D/d1 of 1.4 to 2.2, and an absorptance at 600 nm of not more than 8.0%, and a light emitting apparatus, a BL light source apparatus, and a liquid crystal display device using the same are provided, to provide a light emitting apparatus with a high efficiency and a stable characteristic and a liquid crystal display apparatus using the same by using the &#x3b2;-type SiAlON having controlled dispersibility and improved transparency.

Phosphor, light emitting apparatus, and liquid crystal display apparatus using the same

A method of manufacturing a first phosphor of which emission spectrum shape well matches with a color filter of three primary colors of light, a light-emitting device including the first phosphor, and an image display apparatus including the light-emitting device are provided. The light-emitting device includes a semiconductor light-emitting element emitting excitation light and the first phosphor absorbing the excitation light and emitting green light. The first phosphor contains a solid solution of aluminum element and a metal element M selected from the group consisting of Mn, Ce and Eu in crystals of an oxynitride having a &#x3b2;-type SiNcrystal structure, an amount of oxygen in the crystals being not higher than 0.8 mass %.

Method of manufacturing phosphor, light-emitting device, and image display apparatus

A semiconductor apparatus according to the present invention with a semiconductor element implemented on an insulated substrate comprises: a substrate front surface electrode formed on a front surface side of the insulated substrate and connected with an element electrode of the semiconductor element; a substrate back surface electrode formed on a back surface side of the insulated substrate and electrically connected with the substrate front surface electrode; and a plurality of connection electrodes, extending in a thickness direction of the insulated substrate from one side to the other side of a front surface and a back surface thereof, for electrically connecting the substrate front surface electrode with the substrate back surface electrode, where the substrate front surface electrode or the substrate back surface electrode is formed to have a plane pattern separated for each of the plurality of connection electrodes.

Semiconductor apparatus, inspection method thereof and electric device

An illumination device improved in safety to the eye is provided. The illumination device includes: a semiconductor laser element to serve as an excitation light source which emits laser light; a fluorescent plate which contains a fluorescent substance for emitting light of a desired color and is irradiated with laser light emitted from the semiconductor laser element; a light receiving element part which detects light reflected from the fluorescent plate; and a light source control part which controls laser light emitted from the semiconductor laser element based on a detection signal from the light receiving element part.

Illumination device, automotive lighting equipment, and vehicle

There are provided a wavelength conversion member including phosphors made of phosphor particles which are made of an oxynitride and/or a nitride and have a refractive index n, and a coating which coats each of the phosphor particles and has a refractive index n, and a medium having the phosphors dispersed therein and having a refractive index n, the refractive index nof the coating being a value between nand n, and a light-emitting device having the wavelength conversion member incorporated therein. It is preferable in the present invention that the coating is formed of a plurality of layers, and has its refractive index varying in a stepwise manner in a direction from a surface of each of the phosphor particles to an interface with the medium.

Wavelength conversion member and light-emitting device

A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocrystalline epitaxial layer of the same type as the semiconductor substrate on the semiconductor substrate, subsequently, further lowering the above temperature to form a first monocrystalline epitaxial layer of a reverse type to the epitaxial layer on the epitaxial layer and then, cutting off the growth solution to form an epitaxial wafer as a result, a growth solution to contact the first epitaxial layer of a epitaxial wafer at a high temperature, and thereafter, the temperature is lowered to form a second monocrystalline epitaxial layer of the same kind and type as the first epitaxial layer on the first epitaxial layer.

Method of manufacturing a light emitting diode

Method of manufacturing a light emitting diode using LPE at different

A method for producing a light-emitting diode provided with a pn junction of GaP containing nitrogen on an n-type GaP substrate, includes the steps of: forming an n-type GaP layer on the n-type GaP substrate by epitaxial growth by bringing the n-type GaP substrate into contact with an oversaturated melted Ga; forming an n-type GaP:N layer having a low n-type carrier concentration on the n-type GaP layer by epitaxial growth by bringing the melted Ga into contact with NH.sub.3 gas; and forming a p-type GaP:N layer having a carrier concentration almost equal to a carrier concentration of the n-type GaP:N layer on the n-type GaP:N layer.

Method for producing light-emitting diode

Growing community of inventors

Osaka, Japan

Masamichi Harada