Nec Lcd Technologies, Ltd.

Nlt Technologies, Ltd.

Masami Yamashita

Shinichi Nakata

Takayuki Ishino

Yuji Yamamoto

Michiaki Sakamoto

Mamoru Okamoto

Akitoshi Maeda

Osamu Sukegawa

Takasuke Hayase

Ken-Ichirou Naka

Shin-ichi Nakata

Keiko Yamada

A semi-transmissive-type liquid crystal display device is provided which is capable of preventing an electric erosion reaction between a reflective film made of Al (aluminum) or an Al alloy and a transparent electrode film made of ITO or a like (Indium Tin Oxide) and of inhibiting occurrence of a flicker caused by a residual DC (Direct Current) voltage in the reflective film. In the semi-transmissive-type of a liquid crystal display device, a transmissive region to provide light from a backlight source and a reflective region to receive ambient light are placed in a pixel region and a transparent electrode film is formed above a reflective film formed in the reflective region on an active matrix substrate with a second passivation film being interposed between the reflective film and the transparent electrode film.

Semi-transmissive-type liquid crystal display device and method for manufacturing same

Light exposure areasand light masking areasin a sole reticle are arrayed in alternation to one another in both the longitudinal and transverse directions. Substrate is exposed to light by multi-domain light exposure using this reticle so that the respective areas of the reticle exposed to light with respective shots A to B, B to C . . . , N to M are not adjacent to one another in the boundary portions of the reticle shifted for executing the respective shots, thus relaxing the difference in illuminance between the respective shots and the difference in finish of the boundary portions of the shots, such differences becoming imperceptible to human eyes upon displaying liquid crystal display apparatus.

Mask for light exposure

There is provided a liquid crystal display device including a display screen comprised of a plurality of areas in each of which a pixel pattern is formed, wherein any two areas located adjacent to each other, among the areas, have at least two stitches therebetween.

Liquid crystal display device and method fabricating the same

Liquid crystal display device and method of fabricating the same

The method of fabricating a liquid crystal display device includes the steps of (a) fabricating a switching device on a substrate, (b) forming an interlayer insulating film on the substrate such that the switching device is covered with the interlayer insulating film, and (c) forming a transparent electrode on the interlayer insulating film, the transparent electrode being electrically connected to the switching device through the interlayer insulating film, the step (c) including (c1) depositing electrically conductive, transparent and amorphous material on the interlayer insulating film, (c2) patterning the material into the transparent electrode, and (c3) turning the transparent electrode into polysilicon by thermal annealing carried out after formation of an alignment film.

Method of fabricating liquid crystal display device

Mask for light exposure and method for manufacturing liquid crystal display apparatus employing same

The method of fabricating a liquid crystal display device includes the steps of (a) fabricating a switching device on a substrate, (b) forming an interlayer insulating film on the substrate such that the switching device is covered with the interlayer insulating film, and (c) forming a transparent electrode on the interlayer insulating film, the transparent electrode being electrically connected to the switching device through the interlayer insulating film, the step (c) including (c) depositing electrically conductive, transparent and amorphous material on the interlayer insulating film, (c) patterning the material into the transparent electrode, and (c) turning the transparent electrode into polysilicon by thermal annealing carried out after formation of an alignment film.

A method of forming a resist pattern effectively controls the manner/style and the amount of modification of a resist pattern in its reflowing process, realizing a desired resist pattern with a desired accuracy even if the deformation amount of the resist pattern is increased in the reflowing process. A second layer is formed on a first layer and then, a first resist pattern is formed on the second layer. The second layer is selectively etched using the first resist pattern as a mask. Thereafter, wettability of at least part of an exposed area of the second or first layer from the first resist pattern is adjusted, thereby forming a wettability-adjusted part. The first resist pattern is modified in such a way as to extend to the wettability-adjusted area by reflowing the first resist pattern using an organic solvent, thereby forming a second resist pattern for selectively etching the first layer or the second layer.

Growing community of inventors

Izumi, Japan

Masami Yamashita