Tokyo Electron Limited

Sony Corporation

Jsr Corporation

Tokyo Electron Limi Ted

Isoa, Inc.

Masami Yamashita

Satoru Shimura

Itaru Kanno

Junichi Kitano

Hisashi Kawano

Hidefumi Matsui

Meitoku Aibara

Motoyuki Shima

Takayuki Katano

Yuki Yoshida

Kenji Mochida

Hiroyuki Iwaki

Yo Suzuki

Toru Aoyama

Takayuki Toshima

Tsutae Omori

Hikaru Ito

Shinji Okada

Koji Yamashita

Kousuke Yoshihara

Takahiro Kitano

Takehiko Orii

Naruaki Iida

Yuji Matsuyama

Yoshiyuki Kondo

Gentaro Goshi

Koji Tanaka

Hiroaki Inadomi

Mitsunori Nakamori

Wallace Paul Printz

Masatoshi Deguchi

Shinichi Shinozuka

Yosuke Kawabuchi

Keisuke Egashira

Michio Tanaka

Shigeki Kamiya

Miyako Kaneko

Atsushi Matsuzaki

Kouzou Tachibana

Takuro Masuzumi

Youling Lin

A Kathleen Hennessey

Yoshiteru Fukuda

Derek Bassett

Antonio Luis Pacheco Rotondaro

Naoyuki Okamura

Koichi Tagawa

Kotaro Ooishi

Shigeki Wada

Yonghang Fu

Yongqiang Liu

Toru Ihara

Shuhei Takahashi

Yu Tsurifune

Ichiro Shimomura

A substrate processing apparatus performs increasing a pressure within a processing vessel up to a processing pressure higher than a threshold pressure of a processing fluid by supplying the processing fluid into the processing vessel in which a substrate having thereon a liquid is accommodated; and supplying the processing fluid into the processing vessel and draining the processing fluid while maintaining the pressure within the processing vessel at a level allowing the processing fluid to be maintained in a supercritical state. The increasing of the pressure includes: increasing the pressure to a first pressure; and increasing the pressure to the processing pressure from the first pressure. A temperature of the substrate is controlled to a first temperature in the increasing of the pressure to the first pressure, and is controlled to a second temperature higher than the first temperature in the increasing of the pressure to the processing pressure.

Substrate processing apparatus and substrate processing method

A method for cleaning a substrate includes setting a substrate inside a cleaning chamber, supplying on a surface of the substrate a treatment solution which includes a volatile component and forms a treatment film, vaporizing the volatile component of the treatment solution supplied on the surface of the substrate such that the treatment solution solidifies or is cured on the surface of the substrate and the treatment film is formed on the surface of the substrate, and supplying onto the treatment film formed on the surface of the substrate a removal solution which removes the treatment film.

Substrate cleaning apparatus, substrate cleaning system, substrate cleaning method and memory medium

Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.

Liquid processing method, substrate processing apparatus, and storage medium

An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment comprises a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, wherein the treatment film comprises an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.

Substrate processing system, substrate cleaning method, and recording medium

An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment includes a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, the treatment film includes an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.

Embodiments of the invention provide a method for treating a microelectronic substrate with dilute TMAH. In the method, a microelectronic substrate is received into a process chamber, the microelectronic substrate having a layer, feature or structure of silicon. A treatment solution is applied to the microelectronic substrate to etch the silicon, where the treatment solution includes a dilution solution and TMAH. A controlled oxygen content is provided in the treatment solution or in an environment in the process chamber to achieve a target etch selectivity of the silicon, or a target etch uniformity across the layer, feature or structure of silicon, or both by the treatment solution.

Method of treating a microelectronic substrate using dilute TMAH

An object of the present invention is to be able to obtain a high removing performance of particles. The substrate processing method according to the exemplary embodiment comprises a film-forming treatment solution supply step and a removing solution supply step. The film-forming treatment solution supply step comprising supplying to a substrate, a film-forming treatment solution containing an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent is supplied. The removing solution supply step comprises supplying to a treatment film formed by solidification or curing of the film-forming treatment solution on the substrate, a removing solution capable of removing the treatment film.

Substrate cleaning method and recording medium

An experiment is conducted in advance, for finding a temperature of a cooling plate attained as a result of balancing between a temperature of a substrate after heat treatment and a temperature of the cooling plate at the time of cooling of the substrate. Then, before heat treatment of a first substrate, the cooling plate is moved to a position above a hot plate, the cooling plate is heated to that temperature, and thereafter heat treatment of the substrate is started.

Heat treatment apparatus, heat treatment method, and recording medium storing computer program carrying out the same

It is an object of the present invention to realize, in a coating and developing apparatus including an inspection section, reduction in the startup time, cost reduction, and an improved operating rate of the inspection section. In the present invention, a control program of the coating and developing apparatus is set such that a processing flow and an inspection flow can be independently executed, the processing flow being a flow in which a substrate is carried to a processing station from a cassette station to be processed in the processing station and an aligner and thereafter is returned to the cassette station, and the inspection flow being a flow in which the substrate is carried from the cassette station to an inspection station to be inspected there, and is thereafter returned to the cassette station. At startup of the coating and developing apparatus, the inspection flow and the processing flow are executed, and an evaluation work of an inspection unit of the inspection station and an adjustment work of a processing unit in the processing station can proceed simultaneously. When the inspection station is idle, a substrate can be carried from an external part to the cassette station to be inspected there.

Method of controlling substrate processing apparatus and substrate processing apparatus

A data delivery system providing multipoint delivery of encrypted digital data to specific destinations. A plurality of pieces of key information are generated on the basis of an encryption key specific to each digital data item to be delivered. The multiple pieces of key information are delivered over routes which differ from the routes used to deliver the digital data and which further differ from each other. Physically different media or transmission over a network at different times are used to separately transmit different sets of key information.

Data delivery method and data delivery system using sets of passkeys generated by dividing an encryption key

On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.

In optical line width measurement performed using the scatterometry technique, the present invention measures the line width formed on a substrate more accurately than in the prior art. After a predetermined pattern is formed in a resist film on a substrate, the refractive index and the extinction coefficient of the resist film are measured. Based on the measured values, calculation is performed to obtain calculated light intensity distributions of reflected light reflected from a plurality of virtual patterns. The calculated light intensity distributions are stored, and their library is created. The substrate for which the refractive index and so on are measured is irradiated with light, and the light intensity distribution of its reflected light is measured. The light intensity distribution is collated with the calculated light intensity distributions in the library, so that the line width of the virtual pattern having a matching light intensity distribution is regarded as the line width of the real pattern. Since the library of the light intensity distributions of the virtual pattern is created based on the actually measured refractive index and so on after the formation of the pattern, an accurate line width matching the pattern state at the time of measuring the line width is measured.

Line width measuring method, substrate processing method, substrate processing apparatus and substrate cooling processing unit

A silylation treatment unit includes a chamber, a heating mechanism provided in this chamber for heating a substrate, a supplying mechanism for supplying a vapor including a silylation reagent into the chamber. The unit also has a substrate holder for holding the substrate in the chamber, in which an interval between the heating mechanism and the substrate is adjustable to at least three levels or more. The substrate is received such that it is least influenced by a heat in the chamber by maximizing the interval from the heating mechanism. The interval is brought comparatively closer to the heating mechanism to wait until the temperature inside the chamber obtains a high planer uniformity. The interval is brought further closer to the heating mechanism after a high planer uniformity is obtained such that a silylation reaction occurs.

Silylation treatment unit and method

Growing community of inventors

Koshi, Japan

Masami Yamashita