Tokyo Electron Limited

Octec, Inc.

Sumitomo Metal Industries, Inc.

Tokyo University of Agriculture and Technology

Hokuto Electronics, Inc.

Masami Yakabe

Naoki Ikeuchi

Toshiyuki Matsumoto

Masato Hayashi

Katsuya Okumura

Tomohisa Hoshino

Koichi Nakano

Muneo Harada

Nobuyoshi Koshida

Yoshihiro Hirota

Kenichi Kagawa

Tetsuya Hasebe

Hisashi Fujiwara

Keiichi Enjoji

Kouichi Nakano

A displacement measurement apparatus for a microstructure according to the present invention measures a displacement of the microstructure having a fixed portion electrode including a first electrode and a second electrode and a movable portion electrode located oppositely to the fixed portion electrode. A bias generating circuit applies a bias signal to between the first electrode and the movable portion electrode so that influence of a noise signal on a detection signal picked up from between the second electrode and the movable portion electrode may be reduced. A C/V converting circuit converts a capacitance change that is picked up from between the second electrode and the movable portion electrode into a voltage. A detecting circuit detects a displacement of the movable portion electrode based on the voltage.

Displacement measurement apparatus for microstructure and displcement measurement method thereof

A pressure wave generator () includes a thermally conductive substrate (), a heat insulating layer () formed on one main surface of the substrate (), an insulator layer () formed on the heat insulating layer (), and a heat generator () formed on the insulator layer () to generate heat when a current containing an alternating component is applied thereto. The heat insulating layer () is formed containing at least one of silicon nitride (SiN), silicon dioxide (SiO), aluminum oxide (AlO), magnesium oxide (MgO), diamond crystalline carbon (C), aluminum nitride (AlN), and silicon carbide (SiC). The heat generator () is formed containing, for example, gold (Au) or tungsten (W).

Pressure wave generator and temperature controlling method thereof

A first wiring layeris disposed on an insulating filmon the lower surface of an upper substrate, while a second wiring layerthree-dimensionally crossing the first wiring layeris provided on the insulating filmon a lower substrate. A cantileverhas one end connected to the first wiring layerand the other end opposed to the second wiring layerwith a space therebetween. A thermoplastic sheetis arranged on the upper substrateso as to cover the through-hole. The thermoplastic sheetis pressed by a heated pinagainst the cantileverand deformed so as to maintain the connection between the cantileverand the second wiring layer, and therefore close the switch

Switch array

A method for manufacturing an interposer including a body and a plurality of probes connected to said body is disclosed. The method includes a step of manufacturing said body including the sub-steps of preparing a first substrate having one surface side and the other surface side and being capable of being processed by dry etching, forming a plurality of through holes in said first substrate by dry etching, and making said through holes into conductive holes capable of conducting electricity through a bottom-up fill process. The method also includes a step of manufacturing said plurality of probes and connecting the ends of said plurality of conductive holes on one surface side of said first substrate and a plurality of first probes on said second substrate.

Method for manufacturing an interposer

A through substrate which comprises a silicon substrate () having a through hole () penetrating a front surface () and a back surface (), a oxidized silicon film () being provided along the inner wall surface of the through hole (), layers () comprising Zn and Cu, respectively, being formed on the inner wall surface of the oxidized silicon film (), and a Cu plating layer () which has been grown from a Cu seed layer () along the inner wall surface of layers () comprising Zn and Cu, respectively, via an insulating layer () between them. The above through substrate can provide a through electrode capable of avoiding the noise due to the cross talk.

Through substrate, interposer and manufacturing method of through substrate

A speaker unit has a plurality of sound sources each outputting a sound wave. The compressional, sound wave output from the speaker unit arrives, or vibrates air, which moves a movable part of a three-axis acceleration sensor, or a microstructure of a chip to be tested TP. As the movable part thus moves, a value in resistance accordingly varies, and such variation is measured as based on an output voltage provided via a probe. A control unit determines a property of the three-axis acceleration sensor from a value in property as measured or measurement data. Furthermore, the plurality of sound sources can be spaced by a pitch of a predetermined value set as based on their difference in the distance to the movable part of the three-axis acceleration sensor and the wavelength of the test wave to apply a composite test wave to the movable part such that the composite sound wave's composite sound field is maximized.

Device, method and program for inspecting microstructure

A capacitance detection circuit containing an input protection circuit and having high sensitivity is provided. A capacitance detection circuit for detecting the capacitance of a capacitive sensor, comprising a buffer amplifier connected to the capacitive sensor via a signal wire and having a voltage gain of 1; diodes connected in series between the signal wire and a positive power supply; diodes connected in series between the signal wire and a negative power supply, wherein an output terminal of the buffer amplifier is connected to a junction point of the diodes and to a junction point of the diodes.

Capacitance detection circuit and capacitance detection method

Test sound wave is outputted from a speaker. A movable part of a three-axis acceleration sensor, which is a micro structure of a chip to be tested TP, moves due to the arrival of the test sound wave which is compression wave outputted from the speaker, that is, due to air vibrations. A change in the resistance value that changes in accordance with this movement is measured on the basis of an output voltage that is provided via a probe needles. A control part determines the property of the three-axis acceleration sensor on the basis of the measured property values, that is, measured data.

Device for inspecting micro structure, method for inspecting micro structure and program for inspecting micro structure

An electric potential fixing apparatus of the present invention is an electric potential fixing apparatus that is connected to a connection line () between two capacitances, the first capacitance () and the second capacitance () that is directly connected to the first capacitance, includes the first high resistance (), the second high resistance () that is connected directly to the first high resistance, a voltage dividing unit that outputs electric potential divided by the first high resistance and the second high resistance to the output terminal, the third capacitance () that is connected in parallel to at least either of the first high resistance and the second high resistance, and a voltage supply unit () operable to maintain constantly electric potential of the connection line between the two capacitances () and (), holding combined total electric charge quantity of the first capacitance and the second capacitance, and the output terminal of the voltage supply unit is connected to a signal line between the two capacitances.

Potential fixing device and potential fixing method

A probing card and an inspection apparatus which precisely inspect a microstructure having a minute moving section by a simple method are provided. A probing card () has a speaker (), and a circuit substrate () which fixes a probe (), and the speaker () is disposed on the circuit substrate (). The circuit substrate () is provided with an aperture region. As the speaker () is disposed on that region, a test sound wave is output to the moving section of the microstructure. The probe () detects a change in an electrical characteristic caused by the motion of the moving section according to the test sound wave, thereby inspecting the characteristic of the microstructure.

Probing card and inspection apparatus for microstructure

A capacitor C and an impedance converter Hiz are included in a feedback circuit of the first operational amplifier OPin series; an electrode Pof a capacitive sensor is connected to a connection point of the said capacitor and the converter via a signal line L. The signal line L is connected to a predetermined standard electric potential through resistance Rwhose resistance value is high. When the capacitor is included in the feedback circuit, the signal line becomes in a state of floating and a circuit operation becomes unstable, however, the signal line L is fixed at predetermined electric potential, and therefore, the operation becomes stable. It is acceptable to configure the impedance converter with a voltage follower and connect the resistance Rto the output.

Sensor capacity sensing apparatus and sensor capacity sensing method

An electric potential fixing apparatus is provided that can prevent the combined total amount of electricity of a connection line between the first capacitance and the second capacitance from changing even when the electric potential of the connection line between the first capacitance and the second capacitance is fixed in the case where the first capacitance and the second capacitance are directly connected. This electric potential fixing apparatus has the first high resistance () and the second high resistance () and includes a voltage supply circuit () that preserves the combined total amount of electric charge of a measuring capacitance () and a fixed capacitance () and maintains constant the electric potential of a signal line () that connects the measuring capacitance () and the fixed capacitance (). And an output terminal () of the voltage supply circuit () is connected to the signal line ().

Potential fixing device, potential fixing method, and capacitance measuring instrument

An electrostatic capacitance detection circuitcomprises an AC voltage generator, a first operational amplifierof which non-inverting input terminal is connected to specific potential (a ground in this example), a second operational amplifierthat includes a voltage follower, a resistance (R)connected between the AC voltage generatorand an inverting input terminal of the first operational amplifier, a resistance (R)connected between the inverting input terminal of the first operational amplifierand an output terminal of the second operational amplifier, and an impedance element (a capacitor)connected between an output terminal of the first operational amplifierand a non-inverting input terminal of the second operational amplifier, and a capacitor to be detectedis connected between the non-inverting input terminal of the second operational amplifierand specific potential. The electrostatic capacitance detection circuitand the capacitorare located adjacently.

Electrostatic capacitance detection circuit and microphone device

An electrostatic capacitance detection circuitcomprises an AC voltage generatoran operational amplifierof which non-inverting input terminal is connected to specific potential (a ground in this example), an impedance convertera resistance (R)connected between the AC voltage generatorand an inverting input terminal of the operational amplifiera resistance (R)connected between the inverting input terminal of the operational amplifierand an output terminal of the impedance converterand an impedance element (a capacitor)connected between an output terminal of the operational amplifierand an input terminal of the impedance converterA capacitor to be detectedis connected between the input terminal of the impedance converterand the specific potential.

Impedance measuring circuit and capacitance measuring circuit

An electrostatic capacitance detection circuitcomprises an AC voltage generator, an operational amplifierof which non-inverting input terminal is connected to specific potential (a ground in this example), an impedance converter, a resistance (R)connected between the AC voltage generatorand an inverting input terminal of the operational amplifier, a resistance (R)connected between the inverting input terminal of the operational amplifierand an output terminal of the impedance converter, and an impedance element (a capacitor)connected between an output terminal of the operational amplifierand an input terminal of the impedance converter, and a capacitor to be detectedis connected between the input terminal of the impedance converterand specific potential. The electrostatic capacitance detection circuitand the capacitorare located adjacently.

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Tokyo, Japan

Masami Yakabe