Takata Corporation

Nec Corporation

Renesas Electronics Corporation

Masami Sawada

Yuichi Nanbu

Takayasu Zushi

Mitsuo Yoshiyasu

Manabu Yamada

Tatsuya Usami

Hironobu Miyamoto

Masanori Yamamoto

Yasuo Ito

Katsumi Eikyu

Hiroshi Yanagigawa

Takeshi Satoh

Akihiro Shimomura

Yoshikazu Nakayama

Kazuhisa Mori

Kazumi Yamaguchi

Keizo Hagimoto

In a trench gate type power MOSFET having a super-junction structure, both improvement of a breakdown voltage of a device and reduction of on-resistance are achieved. The trench gate and a column region are arranged so as to be substantially orthogonal to each other in a plan view, and a base region (channel forming region) and the column region are arranged separately in a cross-sectional view.

Semiconductor device and method of manufacturing the same

A Semiconductor device includes a substrate and a thermal conductive film. The substrate has a top surface and a back surface which oppose with each other. A first opening is formed on the back surface of substrate. The thermal conductive film includes a first thermal conductive portion formed in the first opening. The first thermal conductive portion is embedded in the first opening such that a void is formed in the first opening.

Semiconductor device

An airbag apparatus cover has a module cover with a module cover main body, and a door frame with a door frame movable member and a door frame fixed member. When an inflator discharges gas, the door frame movable member is moved upward by an expanding airbag. The module cover is broken along a tear line, and a door portion is cut off and separated from the surrounding module cover. The door portion is moved farther upward with the door frame movable member, and a tear line of the door portion is burst as it is pressed by the airbag. The door portion and its lining plate portions open like a door, and the airbag is expanded into a vehicle cabin. The fixed member, the movable member, and the module cover are integrally formed by a double-shot molding process, which facilitates the manufacture of the cover with high dimensional accuracy.

Cover for use in airbag apparatus, and airbag apparatus

A vertical MOSFET of the present invention comprises a semiconductor wafer having a groove selectively etching in the semiconductor wafer to have substantially vertical side walls. The groove is oxidized using local oxidation of silicon (LOCOS) at 1100.degree. C. or greater to form a LOCOS film on the semiconductor wafer in the groove so that a whole side surface of said semiconductor wafer exposed by the groove is substantially vertical and essentially flat. The LOCOS film in the groove is removed and a thermal insulating film on the semiconductor wafer in the groove. Then a gate electrode made of a conductive film is formed on the thermal insulating film. An interlayer insulating film is formed on the gate electrode and a source electrode is formed in ohmic contact with a source region and a base region. A drain electrode is connected to the opposite side of the semiconductor wafer. As a result, the vertical MOSFET of the present invention has improved on-state resistance, reduced parasitic capacitance and higher breakdown voltage.

Vertical MOSFET and method of manufacturing thereof

A method of manufacturing a MOSFET having a p-type gate electrode made of polycrystalline silicon formed through a gate insulating film on a surface of a conductive semiconductor substrate. The gate electrode contains an n-type impurity in addition to a boron impurity. Low threshold voltage can be obtained with less fluctuation. Preferably, the n-type impurity is phosphorus and/or arsenic, and the concentration thereof ranges from 5.times.10.sup.18 to 1.times.10.sup.20 cm.sup.-3. A channel, which is formed in the surface of the gate insulating film side of the substrate, preferably has a positive polarity.

Method of manufacturing a vertical MOSFET having a gate electrode of

A vertical type field effect transistor includes N-type base regions formed on the surface of a P-type semiconductor substrate, a P-type source region formed in each of the N-type base regions, a gate insulating film formed between the P-type source regions, and a gate electrode formed of polysilicon on the gate insulating film. The transistor has the P-type source regions, the N-type base regions and a lower portion of the P-type semiconductor substrate as three terminals. A method for manufacturing the transistor comprises the steps of: forming the gate insulating film; growing a polysilicon layer; performing ion injection of an N-type impurity for the grown polysilicon layer; and performing heat treatment after the ion injection.

Method of manufacturing a vertical field effect transistor

A two-way conductive directional circuit formed in a polycrystalline silicon layer separated by an insulation film from a semiconductive element is one-way biased for sensing a temperature of the semiconductive element. The directional circuit may be provided with a bias in either conductive direction thereof for sensing a temperature of the semiconductive element, before being provided with a bias in the other conductive direction thereof for sensing the temperature of the semiconductive element.

Integrated semiconductor device with temperature sensing circuit and

Air bag-containing cover

A cover for accommodating an air bag, which is provided at its inner surface with an array of spaced holes for starting tear at a start of an operation of the air bag, is characterized in that ends of the holes in the direction of the array have acute shapes converging toward the adjacent holes, respectively.

Cover for accommodating an air bag

A retainer used for an air bag is formed of synthetic resin-impregnated paper. The retainer is reduced in weight, has a shape adaptibility and can be served at a reduced cost. Further, the attaching operation is easy to improve productivity.

Retainer used for air bag

A cover for a vehicle air bag comprises an external surface layer injection-molded from a thermoplastic material having a JIS-A hardness of 20 to 90 and a core layer injection-molded from a thermoplastic material having a bending elastic modulus (JIS K 7203) of not less than about 1000 kg/cm.sup.2 and a hardness greater than that of the surface layer. The core has weakened zones along which the cover breaks when the air bag is inflated.

Cover for a vehicle air bag

An automotive air bag system has an air bag and inflators for inflating the bag. The bag and the inflators are held in a holder. A modular cover surrounding the bag engages the holder via clearance such that the cover is held by the holder so as to be movable for a given distance toward and/or away from the passenger.

Air bag system

The front wall of a cover for a vehicle safety air bag has weakened zones along which the cover fractures upon inflation of the air bag. The weakened zones have lesser strength in portions nearer the center of the front wall and greater strength in portions farther from the center, thereby ensuring that fracture of the cover begins in the center and propogates outward from the center.

Growing community of inventors

Tokyo, Japan

Masami Sawada