Renesas Technology Corp.

Hitachi, Ltd.

Renesas Electronics Corporation

Space Communications Research Corporation

Masami Ohnishi

Tomonori Tanoue

Hidetoshi Matsumoto

Kenji Sekine

Akira Kuriyama

Osamu Kagaya

Ken Takei

Satoshi Tanaka

Ryouichi Tanaka

Yasunari Umemoto

Atsushi Kurokawa

Mikio Kuwahara

Toshihiko Shimizu

Takeshi Tokuyama

Hitoshi Akamine

Kazuhiro Mochizuki

Isao Ohbu

Chushiro Kusano

Toru Fujioka

Akira Maeki

Haruhiko Funaki

Akio Iso

Hiroi Nambu

Nobuo Masuda

An inverter device includes; a switching element; a plurality of flyback diodes each connected in parallel with the switching element; a first conductor plate connected to anode terminals of the flyback diodes and to one side of the switching element; and a second conductor plate connected to cathode terminals of the flyback diodes and to the other side of the switching element. Each of the flyback diodes is formed in a polygonal shape, and the two flyback diodes in each pair of the flyback diodes that are arranged in mutually adjacent positions are arranged so that a vertex of one opposes a vertex of the other.

Inverter device

There are provided a high-frequency amplifier and a high-frequency module having a high efficiency for an extensive input modulated signal power, and base station/mobile wireless machines using the amplifier or the module. The high-frequency amplifier includes a circuit that detects an envelope of an input modulated signal; a control signal generator circuit (a voltage controlled circuit or a current controlled circuit) that can change a voltage or a current according to a given function on the basis of a magnitude of the detected envelope signal; and a diode clamped variable power circuit that connects a plurality of diode clamped circuits each including a diode, a transistor, and a DC power supply to one another.

High-frequency amplifier, and high-frequency module and wireless transceiver using same

The envelope tracking power supply includes a plurality of variable voltage supplies. A power supply controller of a power amplifier controls the plurality of variable voltage supplies so as to precisely divide the power supply voltage in a high frequency area, based on the voltage distribution of a received transmitted base band signal, in order to maximize the power added efficiency of the power amplifier. The power supply controller includes a threshold memory including a plurality of first zones, and a frequency memory including a plurality of second zones. The power supply controller changes the threshold held in the first zones so that each second zone approaches the average of the second zones.

Radio transmitter and envelope tracking power supply control method

An RF amplification device has amplification elements which amplify a radio frequency input signal in wireless radio communication. Transmission line transformers are coupled to one of an input electrode and an output electrode of the amplification elements and have a main line Lout arranged between the input and the output, and a sub line Linarranged between an AC ground point and one of the input and the output and coupled to the main line Lout. By applying an operating voltage different from the ground voltage level to the AC ground point, the operating voltage is supplied to the output electrodes of the amplification elements via the sub line from the AC ground point. In realizing a high-performance load circuit in an RF amplification device, it is possible to avoid increase of a module height of an RF module.

RF amplification device

An RF amplifying device includes a transmission line transformer coupled to an output electrode of a power transistor for generating transmission power to be fed to an antenna. The transmission power from the output electrode of the power transistor is fed to one end of a main line of the transmission line transformer, and one end of a secondary line of the transmission line transformer is coupled to an AC grounding node. The other end of the secondary line is coupled to the one end of the main line, thereby generating the transmission power. Coupling energy is transmitted from the secondary line to the main line. Coupling members electrically coupled to the output electrode of the power transistor are electrically coupled to a joint formed in either the main line, or the secondary line, at part of the energy coupling part.

RF amplifying device

The RF power amplifier includes first and second amplifiers Qand Qas final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Qand Qare formed on one semiconductor chip. The first bias voltage Vgof the amplifier Qis set to be higher than the second bias voltage Vgof the amplifier Qso that the amplifier Qis operational between Class B and AB, and Qis operational in Class C. The first effective device size Wgqof the amplifier Qis intentionally set to be smaller than the second effective device size Wgqof the amplifier Qbeyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.

RF power amplifier

A high-frequency power amplifier comprising: a plurality of power amplifiers arranged in parallel; an inductance element inserted in series in an input signal line of said each power amplifier; an input matching circuit for performing matching of inputs of a parallel connection which connected each series connection of said power amplifier and said inductance element in parallel; an output matching circuit for performing matching of outputs of the parallel connection; and a control unit for controlling said power amplifiers in such a manner that one of said power amplifiers is always brought to an operation condition and the remainder of said power amplifiers are brought to an operation or non-operation condition.

High-frequency power amplifier and radio communication equipment using the same

The invention provides a wide-band, low-noise, and small-sized high frequency power amplifier that has small temperature dependence of the gain and is excellent in input matching. A parallel circuit consisting of a resistor whose resistance depends strongly on temperature and a conventional resistor is inserted serially into a signal path in an input matching circuit of an amplification unit, and resistances of the resistors are set to appropriate values, for example, about 2/3 times an input impedance of the amplification unit.

High frequency power amplifier

For use in an amplifier configuration including a high-power amplifier and a low-power amplifier which are always interconnected in terms of high frequencies and between which switching is made using no switches, a highly stable high-frequency power amplifier module with high isolation between the amplifiers is provided. To reduce wrapping around from a low-power amplifier section in an activated state to a high-power amplifier section in a deactivated state or from the high-power amplifier section in an activated state to the low-power amplifier section in a deactivated state, an input matching circuit having high isolation characteristics is included in an input matching circuit portion which does not have much to do with amplifier efficiency. Switching of each of the amplifier sections between an activated state and a deactivated state is effected by control using bias input terminals.

High-frequency power amplifier module

Disclosed is a power amplifier having highly stable and excellent controllability, and having low noise in comparison with conventional power amplifiers. With the power amplifier, a differential amplifier made up of transistors Q, Qis provided in the initial stage thereof, and baluns doubling as inter-stage matching circuits, comprised of Cp, Cp, Lp, and Ct, Ct, Lt, respectively, are provided between the initial stage, and a second stage while an unbalanced single-ended circuit is provided in the second stage. The differential amplifier has an emitter-coupled type configuration for coupling both emitters with each other, and output control of the amplifier in the initial stage is executed by varying current of a current source coupled to both the emitters.

A radio frequency power amplifier module that brings sufficient attenuation to a radio frequency signal in a bias supply line connecting a bias control part and a radio frequency power amplifier part without increasing module substrate area is aimed. At least one bonding padhaving a capacitance component to a ground and stitch structure inductancescomposed of a bonding wireprovided via the bonding pad are provided in the bias supply line connecting the bias control part and the radio frequency power amplifier part.

Radio frequency power amplifier module

An object of the present invention is to provide a radio frequency power amplifier of multi stage amplifying method that is designed to reduce instability of output power caused by electromagnetic coupling of bias supply terminals and interconnections of each stage to thereby operate stably. Another object of the present invention is to provide a radio frequency power amplifier that is designed to reduce distortion of output power caused by electromagnetic coupling of bias supply terminals and interconnections of each stage to thereby provide high efficiency. The above objects can be achieved by providing a first interconnection connected to a terminal for supplying a voltage for collector driving to a power amplifying transistor, a second interconnection connected to a terminal for supplying a voltage for collector driving to a second transistor controlling a base bias voltage of the above transistor, and one or more ground parts for electromagnetic shield, wherein the first interconnection and the second interconnection are separated by one or more of the ground parts for electromagnetic shield.

The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network Mand first-stage matching network Mto respective output nodes of a power amplifier unit Aand power amplifier unit Athat either one operate by switching, connecting the output nodes of the first-stage matching network Mand Min parallel, connecting a last-stage matching network Mbetween the junction of Mand Mand the output terminal OUT, the first-stage matching networks M, M, and last-stage matching network Mare formed, for both power amplifier units Aand A, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.

Radio frequency power amplifier

An amplifier using a wide band, high efficiency, and low distortion amplifier free from clipping distortion, and a high efficiency and low distortion radio frequency power amplifier, using that amplifier, which can be applied to wide band wireless communication systems are provided. The amplifier has a DC&#x2014;DC converteraugmented with a low pass filterfor amplifying the low frequency components of an input signal from a terminaland a class B amplifier, augmented with a high pass filter, for amplifying the input signal and supplying its high frequency components after amplification. The DC&#x2014;DC converter and the class B amplifier are connected in parallel, and the power supply voltage of the class B amplifier is controlled with the low frequency components of the input signal.

Growing community of inventors

Hachioji, Japan

Masami Ohnishi