National Institute of Advanced Industrial Science and Technology

Masami Nishikawa

Tetsuo Tsuchiya

Toshiya Kumagai

Takaaki Manabe

Tomohiko Nakajima

Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer. Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.

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Ibaraki, Japan

Masami Nishikawa