Asahi Glass Company, Limited

Masami Miyazaki

Kazuo Sato

Eiichi Ando

Akira Mitsui

Atsushi Hayashi

Junichi Ebisawa

Satoru Takaki

Yasuo Hayashi

Katsuaki Aikawa

Hiromichi Nishimura

Yuki Kawamura

Masao Higeta

A transparent conductive film having a transparent oxide layer and a metal layer containing Ag, laminated in this order from a substrate side in a total of (2n&plus;1) layers), wherein n is an integer of at least 1, wherein the transparent oxide layer contains ZnO and further contains In within a range of from 9 to 98 atomic % based on the sum of Zn and In, and a process for forming a transparent electrode.

Transparent conductive film and process for forming a transparent electrode

A low emissivity film which comprises: a substrate; and a coating of oxide and metallic films alternately formed on the substrate in a total of (2n&plus;1) layers where n is an integer being equal to or more than 1, with the innermost layer being an oxide film, wherein the oxide film (B) formed on the outer side of the metallic film (A) being most apart from the substrate, has an internal stress which is equal to, or less than 1.1&times;10 dyne/cm .

Low emissivity film

A transparent conductive film having a transparent oxide layer and a metal layer containing Ag, laminated in this order from a substrate side in a total of (2n&plus;l) layers), wherein n is an integer of at least 1, wherein the transparent oxide layer contains ZnO and further contains In within a range of from 9 to 98 atomic % based on the sum of Zn and In, and a process for forming a transparent electrode.

A transparent conductive film of a zinc oxide type containing gallium and silicon, which contains silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO.sub.2.

Transparent conductive film and method for its production, and

A low emissivity film comprises a coating of an oxide film, a metal film, an oxide film and so on alternately formed on a substrate in this order in a total of (2n+1) layers where n is an integer being equal to or more than 1, wherein an oxide film (B) formed on the side opposite to a metal film (A) being most remote from the substrate in view from the substrate, contains at least one layer of a zinc oxide film doped with at least one selected from the group consisted of Si, Ti, Cr, B, Mg, Sn and Ga by 1 through 10 atomic % with respect to a total amount including Zn.

A low emissivity film formed on a substrate, which comprises a coating of oxide films and films whose major component is Ag alternately formed on the substrate in a total of (2n+1) layers where n is an integer being equal to or more than 1, with the innermost layer being an oxide film, wherein an integral width .beta.i(.degree.) of (111) diffraction line of a cubic Ag in an X-ray diffraction diagram of the low emissivity film exists in a first range of 180.lambda./(d.pi.cos.theta.).ltoreq..beta.i.ltoreq.180.pi./(d.pi.cos.thet a.)+0.15, where d(.ANG.) designates a thickness of a film whose major component is Ag, .pi.(.ANG.), a wave length of an X-ray for measurement and .theta., Bragg angle.

A low emissivity film which comprises: a substrate; and a coating of oxide and metallic films alternately formed on the substrate in a total of (2n+1) layers where n is an integer being equal to or more than 1, with the innermost layer being an oxide film, wherein the oxide film (B) formed on the outer side of the metallic film (A) being most apart from the substrate, has an internal stress which is equal to, or less than 1.1.times.10.sup.10 dyne/cm.sup.2.

Growing community of inventors

Yokohama, Japan

Masami Miyazaki