Tokyo Shibaura Denki Kabushiki Kaisha

Tokyo Metropolitan Institute of Medical Science

Masami Masuda

Kiyofumi Ochii

Masato Hasegawa

Takashi Nonaka

Takeo Kondo

Haruhiko Akiyama

Makiko Yamashita

Sayuri Watanabe

The present invention has the object of providing a cell into which a protein, which can serve as a polymerization nucleus of a protein polymer, or polymer thereof is introduced, and a method for producing the cell. The invention relates to a cell into which a protein, which can serve as a polymerization nucleus of a protein polymer, or a polymer thereof is introduced, a method for producing the cell, and a method of screening for a compound inhibiting an intracellular accumulation of a protein containing fibril structures, wherein the method comprises bringing a candidate substance into contact with the cell.

Cell into which protein, which can serve as polymerization nucleus of protein polymer, or polymer thereof is introduced, and method for production of the cell

The purpose of the present invention is to develop a method for amplifying in vitro to a large amount of a homogenous insoluble aggregate that is equivalent to an insoluble aggregate formed in the brain of a patient. A method of producing an insoluble aggregate including TDP-43 protein and fragments thereof according to the present invention includes the steps of: (1) introducing an insoluble fraction originated from the brain of a neurodegenerative disease patient into a cell culture in which the intact TDP-43 protein can be expressed in a constitutive manner; (2) culturing the cultured cell into which the insoluble fraction has been introduced; and (3) separating an insoluble fraction from the cultured cell. Optionally, the method may additionally include a step of amplifying the insoluble aggregate of the neurodegenerative-disease-related protein in the cultured cell.

Method for producing insoluble aggregate of neurodegenerative-disease-related protein

A positive feedback amplifier circuit for possible use with a semiconductor memory device includes first and second MOS transistors whose current paths are connected together between two power source terminals, the gate of the first MOS transistor being connected to a clock. A third MOS transistor has a current path connected between one of the power source terminals and the gate of the second MOS transistor and also has a gate connected to the junction between the first and second MOS transistors and to a resistive means whose other end is connected to one of the power source terminals.

Positive feedback amplifier circuitry

A semiconductor memory device includes a plurality of memory cells arranged in a matrix fashion, word lines each connected commonly to the memory cells arranged on the same row, plural pairs of data lines each pair connected commonly to the memory cells on the same column line, and a row decoder connected to the word lines. The semiconductor memory device further includes positive feedback amplifiers connected to the work lines, which respond to voltages on the word lines at a preset or higher level to pull up the potential on the word lines to a higher level.

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Tokyo, Japan

Masami Masuda