Matsushita Electric Industrial Co., Ltd.

Fuji Chemicals Industrial Co., Ltd.

Masami Honma

Shunsuke Matsuda

Soji Tsuchiya

Gentaro Nagamatsu

A resist material used for forming a positive image by application of radiation, said material comprising as principal constituent poly(ethyl .alpha.-cyanoacrylate), poly(ethyl .alpha.-amidoacrylate) or a binary copolymer thereof or a ternary copolymer of poly(ethyl .alpha.-cyanoacrylate), poly(ethyl .alpha.-amidoacrylate) and polymethacrylonitrile. The minimum incident charge of radiation required for forming a desired resist pattern by use of this resist material is as low as 10.sup.-7 coulomb/cm.sup.2, or far lower than the level required in use of other known resist materials, and a positive resist image which can well stand the chromium etching solutions is obtained by short-time irradiation.

Positive resist for high energy radiation

A film of poly(methacrylamide) is heated to partially form imide bonds with elimination of ammonia, and such imide bonding causes crosslinking in the polymer to form a crosslinked polymer film. This film can be advantageously adapted as a positive resist capable of forming a positive image by exposure to radiation such as electron beams. The minimum incident charge required for such exposure is of the order of 10.sup.-7 coulomb/cm.sup.2, which is far lower than the level required in the use of conventional resists. The resist provided according to this invention is also capable of forming an excellent heat-resistant positive resist image by short-time exposure to radiation.

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Kawasaki, Japan

Masami Honma