Kabushiki Kaisha Toshiba

Masako Hori

Yoshiyuki Shioyama

Hidenori Shibata

Nobuo Nakamura

Hirofumi Yamashita

Ikuko Inoue

Tetsuya Yamaguchi

Hisanori Ihara

Hidetoshi Nozaki

Hiroshi Naruse

Akiko Nomachi

Hideki Inokuma

Akira Makabe

Seigo Abe

Yutaka Koshino

Koji Kimura

Masaaki Ogawa

The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a pdiffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the pdiffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the pdiffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the pdiffusion layer to a position below the gate electrode.

Solid-state image pickup apparatus

The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p diffusion layer to a position below the gate electrode.

At the front side of a wafer cassette fitted to a wafer feeding unit of a magnetic levitation wafer conveying device, a wafer stopper for preventing the wafer waiting in the wafer cassette from popping out is provided. The wafer supplied from the magnetic levitation conveying device is supplied into the reaction chamber by magnetic force, and is directly held in the reaction chamber by this magnetic force. Since the wafer stopper is positioned between the wafer cassette fitted in the wafer feeding unit and the starting end of the wafer conveying route, the wafer waiting in the wafer cassette next to the wafer to be conveyed is prevented from popping out together with the wafer to be conveyed. Moreover, the wafer conveyed by the magnetic force can be directly held in the reaction chamber in heated state.

Apparatus for conveying and processing a wafer in a physically

A charge coupled device, together with a method for manufacturing the device, is provided which can eliminate a conventional problem, that is, the remaining of a light-receiving film at a great step area and a consequent lowering of a sensitivity resulting from the shutting-off of a portion of incident light. In the charge coupled device, insulating areas are formed in substantially strip-like array on a silicon substrate. Respective transfer electrodes are formed on a gate insulating film on a semiconductor substrate with an insulating areas interposed. The respective phase transfer electrodes are electrically separated by the insulating area. By doing so, the respective phase transfer electrodes can be formed on the same plane without leaving a greater step. This can achieve a thinned light shielding film.

Solid state image sensor device with single-layered transfer electrodes

Growing community of inventors

Yokohama, Japan

Masako Hori