Adeka Corporation

Samsung Electronics Co., Ltd.

Masako Hatase

Atsushi Sakurai

Tomoharu Yoshino

Masaki Enzu

Tsubasa Shiratori

Naoki Yamada

Atsushi Yamashita

Akio Saito

Ryota Fukushima

Youn-Joung Cho

Akihiro Nishida

Hiroyuki Uchiuzou

Nana Okada

Keisuke Takeda

Jung-sik Choi

Sang-Chul Youn

Chiaki Mitsui

Ji-Na Kang

Provided is a thin-film forming raw material, including an alkoxide compound represented by the following general formula (1): where Rto Reach independently represent an alkyl group having 1 to 5 carbon atoms, M represents a rare earth metal atom, and 'n' represents a valence of the rare earth metal atom.

Thin-film forming raw material, thin-film and method of producing thin-film

A method for producing a thin-film containing a metal atom or a semimetal atom on the surface of a substrate, comprising the steps of vaporizing a thin-film forming raw material comprising an alkoxide compound represented by the following general formula (1), introducing the vaporized compound into a treatment atmosphere, and subjecting the vaporized compound to decomposition and/or a chemical reaction, to thereby form the thin-film containing a metal atom or a semimetal atom on the surface of the substrate: where Rto R, M and n are defined herein.

Alkoxide compound, thin-film forming raw material, and method of producing thin-film

The present invention provides a ruthenium compound represented by the following general formula (1) or (2), a thin-film forming raw material containing the ruthenium compound, and a method of producing a thin-film including using the thin-film forming raw material: where Rto Reach independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing group, and 'n' represents an integer from 0 to 2, provided that at least one of Rto Rrepresents the fluorine atom-containing group; where Rto Reach independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and a total number of the carbon atoms of Rto Ris 3 or more.

Ruthenium compound, thin-film forming raw material, and method of producing thin film

Provided is a thin-film forming raw material containing a compound represented by the following formula (1): in the formula (1), Rto Reach independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and 'n' represents a valence of the metal atom represented by M, provided that at least one of R, R, and Rrepresents the group containing a fluorine atom.

Compound, thin-film forming raw material that contains said compound, and method of manufacturing thin film

A ruthenium compound represented by a general formula described in the specification, a raw material which is for forming a thin film and which contains the ruthenium compound, and a method of producing a thin film using the raw material for forming a thin film are provided.

Ruthenium compound, raw material for forming thin film, and method for producing thin film

Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where Rrepresents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, Rand Reach independently represent an alkyl group having 1 to 5 carbon atoms, and zrepresents an integer of from 1 to 3.

Raw material for forming thin film by atomic layer deposition method, method of producing thin film, and alkoxide compound

The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), Rand Reach independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and Rdenotes a methyl group or ethyl group. It is preferable for Rand Rto be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.

Method for producing a thin film

An alkoxide compound is represented by General Formula (I) below: wherein Rto Reach independently represent hydrogen, a Chydrocarbon group, etc.; Rrepresents a Chydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a Chydrocarbon group, etc.; and M represents a metal atom or a silicon atom, n represents an integer of 1 or more, m represents an integer of 0 or more, and n+m represents the valence of the metal atom or silicon atom.

Alkoxide compound, raw material for forming thin film, method for manufacturing thin film, and alcohol compound

Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R, R, and Reach independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of Rand Ris 3 to 10. In formula (I), Rand Rare each preferably ethyl or isopropyl.

Ruthenium compound, material for thin film formation, and process for thin film formation

An alcohol compound of formula (II) in which Rrepresents a methyl group or an ethyl group, Rrepresents a hydrogen atom, and Rrepresents a Clinear or branched alkyl group. The alcohol compound has physical properties suitable for a material for forming thin films by CVD, and particularly, physical properties suitable for a material for forming metallic-copper thin films.

Alcohol compound

The alkoxide compound of the present invention is characteristically represented by the following general formula (I): 

Alkoxide compound, thin film-forming starting material, and thin film formation method

Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, Rrepresents a methyl group or an ethyl group, Rrepresents a hydrogen atom or a methyl group, Rrepresents a Clinear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

Metal alkoxide compound, thin-film-forming material, method for producing thin film, and alcohol compound

Disclosed is an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), Rand Reach represent straight or branched C2-C5 alkyl, and Rrepresent methyl or ethyl. Rand Rare each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD. 

Aluminum compound, thin-film forming raw material, and method for producing thin film

An aluminum compound is represented by following Formula 1. In Formula 1, X is a functional group represented by following Formula 2 or Formula 3. 

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Tokyo, Japan

Masako Hatase