Mitsubishi Electric Corporation

Kabushiki Kaisha Toshiba

Sony Corporation

Hitachi, Ltd.

Fujitsu General Limited

Hitachi High-tech Corporation

Mitsubishi Denki Kabushiki Kaisha

Toshiba Electronic Devices & Storage Corporation

Nissan Motor Company Limited

Hewlett-packard Company

Hitachi-high-technologies Corporation

Hitachi Global Storage Technologies Netherlands B.v.

Hgst Netherlands, B.v.

Diversey, Inc.

Hewlett-packard Corporation

Masaki Yamada

Ryota Kondo

Satoshi Murakami

Shinya Ozaki

Takaaki Takahara

Akihiko Iwata

Hideki Shibata

Shigeki Harada

Tomonori Kojima

Masanori Murakami

Yuji Ogata

Yoshizumi Inazawa

Yoichi Tanabe

Kentaro Odaka

Naohisa Uehara

Hiroshi Ishibashi

Yusuke Higaki

Hirokazu Matsuzaki

Kazuyuki Higashi

Katsuya Miura

Kazutoshi Awane

Yuuya Tanaka

Atsuko Sakata

Hiromasa Takahashi

Naofumi Nakamura

Masahiko Hasunuma

Junichi Wada

Tomio Katata

Hirotaka Hamamura

Masaaki Hatano

Seiichi Omoto

Nobuyuki Muranaka

Soichi Yamashita

Takashi Kaneyama

Tatsuya Iijima

Takushi Fujioka

Makoto Seto

Kazuya Kinoshita

Kazumichi Tsumura

Yoshihiro Takeshima

Minakshisundaran Balasubramanian Anand

Toshiaki Tanno

Yu Zhao

Hidetaka Terakubo

Kiyohiko Sato

Tsugiyoshi Ono

Hidehiko Kinoshita

Kenchi Ito

Shinichi Yamada

Osamu Mori

Takashi Kumagai

Yoshikazu Tanaka

Toshiyuki Yoshizawa

Susumu Ogawa

Noriyuki Matsubara

Yoshihiro Hatakeyama

Kenji Narita

Yuta Komatsu

Hisao Igarashi

Nobuhisa Toshitani

Takayuki Shinohara

Shinichiro Katagiri

Hiroshi Ito

Takeshi Mori

Nobuhiro Kihara

Shingo Suzuki

Hiroshi Okuda

Yoshihisa Takayama

Yuichi Ishikawa

Takashi Suzuki

Norikazu Ito

Takeki Yazaki

Kenetsu Yokogawa

Noriaki Matsunaga

Moriyuki Hazeyama

Yoshihiro Miyama

Daigo Takemura

Takashi Hattori

Kenta Suzuki

Takahiro Urakabe

Takashi Isobe

Kenro Mitsuda

Yasuyoshi Hori

Makoto Satake

Katsumi Ikeda

Takuto Yano

Yuichi Shibukawa

May Takada

Ryosuke Kobayashi

Bruce A Thompson

Koki Nakashiro

Tomoyuki Kawakami

Brian A Milthorp

Mai Uenaka

Tomoyuki Oku

Atsushi Itagaki

Hiroto Otake

Yohei Tan

Peter Joseph Bramhall

Toshihiko Yamada

Provided is an etching apparatus or an etching method which improves a processing yield in etching a film formed of SiO. As means therefor, a semiconductor manufacturing apparatus, which includes an introduction port through which a processing gas containing respective vapors of hydrogen fluoride and an alcohol is introduced into a processing chamber inside a processing vessel, a sample table which is arranged in the processing chamber and on which a wafer to be processed is placed on an upper surface thereof, and an electrode which is arranged inside the sample table, and, when etching a first film formed on the upper surface of the wafer, configured to apply DC power that forms an electric field on a first layer formed on the upper surface of the wafer by the processing gas, is used.

Semiconductor manufacturing apparatus and semiconductor manufacturing method

Electric motor

Provided is a method of manufacturing a magnetic tunnel junction that simultaneously realizes removal of oxides on side walls of a magnetic layer and formation of a protective film and prevents deterioration of magnetic characteristics. The method includes: a first stepof etching a stacked film including a first magnetic layer, a MgO barrier layer, and a second magnetic layer stacked in order by plasma etching using an oxidizing gas to form the magnetic tunnel junction; and a second stepof simultaneously introducing an organic acid gas which is an n-valent acid and a precursor gas having a corresponding metal element valence of m, to form a first protective film on side walls of the magnetic tunnel junction. In the second step, the precursor gas is introduced at a molar ratio of n/m or more with respect to 1 mole of the organic acid gas introduced.

Method of manufacturing magnetic tunnel junction and magnetic tunnel junction

A method of etching a silicon oxide film with high precision at high selectivity as compared with a silicon nitride film while establishing both of a higher etching rate of the silicon oxide film and a lower etching rate of the silicon nitride film is provided. An etching method according to the present invention is directed to a dry etching method for etching a film structure without using plasma in which an end of a film layer having a silicon oxide film vertically sandwiched between silicon nitride films and laminated and formed in advance on a wafer disposed in a processing chamber forms a side wall of a groove or a hole while a processing gas is supplied into the processing chamber, the method including the steps of: supplying a hydrogen fluoride gas; cooling the wafer to a low temperature of &#x2212;30&#xb0; C. or lower, preferably, to &#x2212;30 to &#x2212;60&#xb0; C.; and etching the silicon oxide film laterally from the end.

Etching method

A semiconductor device of the embodiment includes first and second conductive layer; a silicon nitride layer between the first conductive layer and the second conductive layer; a silicon oxide layer between the silicon nitride layer and the second conductive layer; a silicon oxynitride layer between the silicon oxide layer and the second conductive layer; and a third conductive layer between the first conductive layer and the second conductive layer, the third conductive layer electrically connected to the first and second conductive layer, a first tilt angle of a plane where the third conductive layer is in contact with the silicon oxynitride layer with respect to an interface between the silicon nitride layer and the silicon oxide layer is smaller than a second tilt angle of a plane where the third conductive layer is in contact with the silicon oxide layer with respect to the interface.

Semiconductor device

A magnetic tunnel junction device includes a first ferromagnetic layer, a tunnel barrier that is in contact with the first ferromagnetic layer, and a synthetic ferrimagnetic reference layer that is in contact with the tunnel barrier while being in the other side of the first ferromagnetic layer, in which the synthetic ferrimagnetic reference layer includes a second ferromagnetic layer that has a first magnetization direction while being in contact with the tunnel barrier, a magnetic layer that has a second magnetization direction which is anti-parallel to the first magnetization direction, and a first nonmagnetic layer that is interposed between the second ferromagnetic layer and the magnetic layer, and lateral dimensions of the magnetic layer of the synthetic ferrimagnetic reference layer are made larger than lateral dimensions of the first ferromagnetic layer and the second ferromagnetic layer.

Magnetic tunnel junction device, magnetoresistive random access memory using same and manufacturing method of magnetic tunnel junction device

To provide a magnetic tunnel junction (MTJ) element that is adapted to suppress the degradation of magnetic properties of a magnetic tunnel junction layer due to plasma CVD layer formation and adapted for miniaturization. The MTJ element includes a magnetic tunnel junction layer () and a plurality of passivation layers formed on a side wall of the magnetic tunnel junction layer. The plurality of passivation layers are SiN layers formed under different plasma CVD layer forming conditions and include a first passivation layerformed in direct contact with the magnetic tunnel junction layer. A hydrogen ion density or hydrogen ion energy of a layer forming condition for the first passivation layer is lower than a hydrogen ion density or hydrogen ion energy of a layer forming condition for the other of the plural passivation layers. The other passivation layers include a passivation layer, a nitrogen density of which is higher than a nitrogen density of the first passivation layer.

Magnetic tunnel junction element, magnetic memory using the same, and manufacture method of magnetic tunnel junction element

A semiconductor device according to an embodiment includes a semiconductor substrate, a wiring layer on or above the semiconductor substrate, the wiring layer having a first metal layer and a second metal layer in contact with the first metal layer, a capacitor lower electrode on or above the semiconductor substrate, the capacitor lower electrode being the same material as the second metal layer, a capacitor insulating film on the capacitor lower electrode, and a capacitor upper electrode on the capacitor insulating film. A distance from the semiconductor substrate to an upper face of the capacitor lower electrode is equal to or less than a distance from the semiconductor substrate to an upper face of the wiring layer, and a distance from the semiconductor substrate to a lower face of the capacitor lower electrode is greater than a distance from the semiconductor substrate to a lower face of the wiring layer.

Semiconductor device including a capacitor and method of manufacturing semiconductor device

There is provided a method for manufacturing a magnetic tunnel junction element which prevents properties degradation due to hydrogen ions, and to which RIE processing that is capable of securing an etching shape is applied. A multilayer film which has a magnetic film and an oxidation film, of which a thickness of the magnetic film is 2 nm or less, and of which the magnetic film and the oxidation film have an interface in a film surface direction is generated, a mask layer that is patterned is formed on the multilayer film, etching is performed with respect to the multilayer film on which the mask layer is formed, by using a mixed gas of a hydrogen gas and a nitrogen gas as a reaction gas, and a ratio of a flow rate of the hydrogen gas to a flow rate of the mixed gas is 50% or less.

Method for manufacturing magnetic tunnel junction element, and inductively coupled plasma processing apparatus

In a drive system including a battery, a power generation device (PGD) including a generator mounted to an engine shaft, and a drive device (DD) including a motor for driving a driven component, a drive controller performs a drive control for PGD and DD and a switching control for a switching device. During a parallel connection, respective high-voltage side terminals (HVTs) of PGD and the battery are connected to a HVT of DD, and respective low-voltage side terminals (LVTs) of PGD and the battery are connected to LVT of DD. During a series connection, HVT of any one of PGD and the battery is connected to HVT of DD, and LVT of another one of PGD and the battery is connected to LVT of DD, and terminals of PGD and the battery, which are not connected to DD, are connected to each other.

Drive system and drive control method

A power supply unit includes: a first rectifying device connected to the direct current power source, a second rectifying device having an anode connected to the first rectifying device, a first condenser having one end connected to the second rectifying device, a second condenser connected to the second rectifying device, a third rectifying device having an anode connected to the second rectifying device, a resonance reactor connected to the third rectifying device and connected to the first condenser, s switching device connected to the direct current power source and connected the third rectifying device, an output reactor connected to the third rectifying device, an output condenser connected to the direct current power source and connected to the output reactor, an output rectifying device connected to the first condenser and connected to the direct current power source, a control circuit sending a gate signal to the switching device.

Circuit of a power supply unit having a switching device

A first DC/DC converter is of a constant voltage control type and is controlled so as to keep the voltage of an electric generation bus at a predetermined target value. A second DC/DC converter is of a constant current control type and is controlled so as to keep input current or output current at predetermined target current. A control circuit determines an optimum target value of electric generation bus voltage, based on different algorithms, in accordance with all or some of modes A to C which are classified by the charging/discharging condition of a second electric storage device, and controls the first DC/DC converter so that the electric generation bus voltage becomes the determined target value.

Power supply system with improved energy recovery from regenerative braking

A transformer is composed of three or more windings magnetically coupled. An AC/DC converter () for converting AC power of an AC power supply (), a capacitor (), and a switching circuit () are connected to one winding (), and a switching circuit () or () for power conversion of a DC power supply is connected to at least one of the other windings. Voltage of the capacitor () or the AC power supply () is detected. On the basis of the detected value thereof, the operation state of each switching circuit (), (), () is determined by an operation state determination circuit (). On the basis of a result of the determination, the power supply is switched among the AC power supply () and the DC power supplies () and () by an output switch circuit ().

Power conversion device which detects power shortage and switches to a power supply that is capable of supplying power

An electric motor includes: a rotating shaft; a rotor securely attached to the rotating shaft and including a cylindrical magnet portion; a stator formed in an annular shape on an outer peripheral side of the rotor; a board installed above the rotor and the stator with a predetermined air gap therefrom; and a lead wire connected to the board. A connecting portion of the board and the lead wire is formed at a position on an inner side of an axial projection plane of the magnet portion of the rotor above the board. In this electric motor, even when the rotor is increased in diameter, the connecting portion of the lead wire connected to the board can be prevented from being located proximate to an upper part of the magnet portion of the rotor.

Electric motor with rotor, circuit board and improved lead wire connection

Growing community of inventors

Tokyo, Japan

Masaki Yamada