Canon Kabushiki Kaisha

Mitsubishi Electric Corporation

Kabushiki Kaisha Toshiba

Sony Corporation

Hitachi, Ltd.

Fujitsu General Limited

Hitachi High-tech Corporation

Mitsubishi Denki Kabushiki Kaisha

Toshiba Electronic Devices & Storage Corporation

Nissan Motor Company Limited

Hewlett-packard Company

Hitachi-high-technologies Corporation

Hitachi Global Storage Technologies Netherlands B.v.

Hgst Netherlands, B.v.

Diversey, Inc.

Masaki Yamada

Ryota Kondo

Kazuhiro Yamauchi

Satoshi Murakami

Satoru Nishioka

Akihiko Iwata

Hideki Shibata

Minoru Nakamura

Kentaro Odaka

Takashi Matsui

Kazuyuki Higashi

Michihisa Magome

Atsuko Sakata

Junichi Wada

Hiromasa Takahashi

Taichi Shintou

Naofumi Nakamura

Masahiko Hasunuma

Toru Ishii

Yuichi Kikuchi

Tetsuo Hino

Shinichi Yamada

Kenchi Ito

Kazutoshi Ishida

Takashi Kumagai

Osamu Mori

Kenji Takashima

Yoshikazu Tanaka

Takashi Hattori

Susumu Ogawa

Toshiyuki Yoshizawa

Takeshi Miyazaki

Hiroshi Inoue

Hiroshi Ito

Takeshi Mori

Nobuhiro Kihara

Shingo Suzuki

Hiroshi Okuda

Yoshihisa Takayama

Takashi Suzuki

Yuichi Ishikawa

Norikazu Ito

Masahiro Watanabe

Takeki Yazaki

Kenetsu Yokogawa

Yuji Tsushima

Noriaki Matsunaga

Moriyuki Hazeyama

Yoshihiro Miyama

Daigo Takemura

Kenta Suzuki

Tsunenori Ashibe

Hideya Arimura

Shinya Ozaki

Takaaki Takahara

Sosuke Yamaguchi

Shigeki Harada

Shohei Urushihara

Tomonori Kojima

Masanori Murakami

Yuji Ogata

Yuji Sakurai

Yoshizumi Inazawa

Minoru Ito

Takashi Koyanagi

Hiroaki Komatsu

Naohisa Uehara

Hiroshi Ishibashi

Yusuke Higaki

Kunimasa Kawamura

Hirokazu Matsuzaki

Katsuya Miura

Takumi Furukawa

Tomio Katata

Hirotaka Hamamura

Kazuhito Wakabayashi

Masaaki Hatano

Seiichi Omoto

Soichi Yamashita

Nobuyuki Muranaka

Tomoya Uesugi

Kozue Uratani

Atsuhiko Ohmori

Kazumichi Tsumura

Yoshihiro Takeshima

Takashi Kusaba

Hiroaki Watanabe

Masahiro Kurachi

Yuya Tomomizu

Kenya Terada

Noriyuki Matsubara

Takahiro Urakabe

Takashi Isobe

Kenro Mitsuda

Yasushi Katsuta

Arihiro Yamamoto

Yasuyoshi Hori

Kazuaki Nagaoka

Norifumi Muranaka

Makoto Satake

An isolator includes first and second conductors, and first to third insulating film. The first insulating film is provided between the first and second conductors. The first insulating film has a first film thickness, and includes silicon, oxygen, and nitrogen. The second insulating film is provided between the first conductor and the first insulating film. The second insulating film includes silicon and oxygen. The second insulating film includes no nitrogen, or further includes nitrogen of a smaller composition ratio than a nitrogen composition ratio in the first insulating film. The third insulating film is provided between the first conductor and the second insulating film. The second and third insulating films has second and third film thicknesses, respectively. The second and third film thickness are less than the first film thickness. The third insulating film having a different composition from the compositions of the first and second insulating films.

Isolator

A method for etching a silicon oxide film at a high selection ratio with respect to a silicon nitride film while a high etching rate of the silicon oxide film is balanced with a low etching rate of the silicon nitride film. The etching processing method is a dry etching processing method for etching a film without using plasma by supplying gas into a process chamber, the film having a side wall of a groove or a hole constituted by respective end parts of laminated film layers formed on a wafer, the laminated film layers including silicon oxide films each sandwiched between silicon nitride films, and in which the silicon oxide films are etched laterally from the end parts with the wafer being set to a low temperature equal to or less than (0.040x−42.0° C.) when a partial pressure of hydrogen fluoride gas is taken as x (Pa).

Etching processing method

Provided is an etching apparatus or an etching method which improves a processing yield in etching a film formed of SiO. As means therefor, a semiconductor manufacturing apparatus, which includes an introduction port through which a processing gas containing respective vapors of hydrogen fluoride and an alcohol is introduced into a processing chamber inside a processing vessel, a sample table which is arranged in the processing chamber and on which a wafer to be processed is placed on an upper surface thereof, and an electrode which is arranged inside the sample table, and, when etching a first film formed on the upper surface of the wafer, configured to apply DC power that forms an electric field on a first layer formed on the upper surface of the wafer by the processing gas, is used.

Semiconductor manufacturing apparatus and semiconductor manufacturing method

Provided is an electrophotographic electroconductive member, including: an electroconductive support; an electroconductive layer; and a surface layer in order, wherein an impedance is 1.0×10Ω to 1.0×10Ω at an outer surface of the electroconductive member, in the surface layer, an electronic electroconductive agent is dispersed, the electroconductive layer has a matrix containing a cross-linked product of a first rubber and domains each containing a cross-linked product of a second rubber and electroconductive particles, and wherein, and wherein among the domains observed in specified observation regions, 80% by number or more of the domains satisfy (1) and (2):

Electroconductive member, process cartridge, and electrophotographic image formation device

Electric motor

The present invention provides an electrophotographic member having excellent deformation recovery even when stored or used under a high temperature and high humidity environment, which is useful in forming a high-quality electrophotographic image; a process cartridge; and an electrophotographic apparatus. The electrophotographic member of the present invention includes a conductive mandrel and an electro-conductive layer; the electro-conductive layer including a resin synthesized from an ion conducting agent and a compound being able to react with the ion conducting agent; the ion conducting agent including a specific anion and a cation having at least three hydroxyl groups; the compound being able to react with the hydroxyl group.

Electrophotographic member, process cartridge and electrophotographic apparatus

Provided is a method of manufacturing a magnetic tunnel junction that simultaneously realizes removal of oxides on side walls of a magnetic layer and formation of a protective film and prevents deterioration of magnetic characteristics. The method includes: a first stepof etching a stacked film including a first magnetic layer, a MgO barrier layer, and a second magnetic layer stacked in order by plasma etching using an oxidizing gas to form the magnetic tunnel junction; and a second stepof simultaneously introducing an organic acid gas which is an n-valent acid and a precursor gas having a corresponding metal element valence of m, to form a first protective film on side walls of the magnetic tunnel junction. In the second step, the precursor gas is introduced at a molar ratio of n/m or more with respect to 1 mole of the organic acid gas introduced.

Method of manufacturing magnetic tunnel junction and magnetic tunnel junction

Provided is an electrophotographic electro-conductive member including a support having an electro-conductive outer surface, and an electro-conductive layer. The electro-conductive layer has a matrix containing a crosslinked product of a first rubber and domains containing a crosslinked product of a second rubber and an electron conductive agent. When measuring an impedance by applying alternating voltage between the outer surface of the support and a platinum electrode on an outer surface of the electro-conductive layer while changing a frequency, a slope at specific frequencies is &#x2212;0.8 to &#x2212;0.3 in a double logarithmic plot, and an impedance at specific frequency range is 1.0&#xd7;10&#x3a9; to 1.0&#xd7;10&#x3a9;. When measuring an impedance by applying alternating voltage between the outer surface of the support and a platinum electrode on an outer surface of the electrophotographic electro-conductive member while changing a frequency, an impedance at specific frequency range is 1.0&#xd7;10&#x3a9; to 1.0&#xd7;10&#x3a9;.

Electrophotographic electro-conductive member, process cartridge, and electrophotographic image forming device

An electro-conductive layer of an electrophotographic electro-conductive member has a matrix-domain structure. The matrix contains a first rubber. The domain contains a second rubber and electro-conductive particles. Where &#x3bc; represents an average of ratios of the cross-sectional area of the electro-conductive particles contained in each of the domains to the cross-sectional area of each of the domains appearing on a cross-section of the electro-conductive layer in a thickness direction, and &#x3c3; represents a standard deviation of the ratios, &#x3c3;/&#x3bc; is 0 or more and 0.4 or less, and &#x3bc; is 20% or more and 40% or less. At least eight of samples with a first cubic shape 9 &#x3bc;m on a side, which are sampled at arbitrary nine positions on the electro-conductive layer, satisfy the specified condition.

Electro-conductive member, method for producing same, process cartridge and electrophotographic image forming apparatus

A method of etching a silicon oxide film with high precision at high selectivity as compared with a silicon nitride film while establishing both of a higher etching rate of the silicon oxide film and a lower etching rate of the silicon nitride film is provided. An etching method according to the present invention is directed to a dry etching method for etching a film structure without using plasma in which an end of a film layer having a silicon oxide film vertically sandwiched between silicon nitride films and laminated and formed in advance on a wafer disposed in a processing chamber forms a side wall of a groove or a hole while a processing gas is supplied into the processing chamber, the method including the steps of: supplying a hydrogen fluoride gas; cooling the wafer to a low temperature of &#x2212;30&#xb0; C. or lower, preferably, to &#x2212;30 to &#x2212;60&#xb0; C.; and etching the silicon oxide film laterally from the end.

Etching method

A semiconductor device of the embodiment includes first and second conductive layer; a silicon nitride layer between the first conductive layer and the second conductive layer; a silicon oxide layer between the silicon nitride layer and the second conductive layer; a silicon oxynitride layer between the silicon oxide layer and the second conductive layer; and a third conductive layer between the first conductive layer and the second conductive layer, the third conductive layer electrically connected to the first and second conductive layer, a first tilt angle of a plane where the third conductive layer is in contact with the silicon oxynitride layer with respect to an interface between the silicon nitride layer and the silicon oxide layer is smaller than a second tilt angle of a plane where the third conductive layer is in contact with the silicon oxide layer with respect to the interface.

Semiconductor device

Provided is an electrophotographic member that shows a small increase in electrical resistance value even when used under a low-temperature environment. The electrophotographic member is an electrophotographic member including an electroconductive substrate and a resin layer on the electroconductive substrate, wherein the resin layer contains an anion, inorganic particles having a hydrophobicity degree of 40% or more and 80% or less, and a resin having a specific cation structure.

Electrophotographic member, process cartridge, and electrophotographic image-forming apparatus

A magnetic tunnel junction device includes a first ferromagnetic layer, a tunnel barrier that is in contact with the first ferromagnetic layer, and a synthetic ferrimagnetic reference layer that is in contact with the tunnel barrier while being in the other side of the first ferromagnetic layer, in which the synthetic ferrimagnetic reference layer includes a second ferromagnetic layer that has a first magnetization direction while being in contact with the tunnel barrier, a magnetic layer that has a second magnetization direction which is anti-parallel to the first magnetization direction, and a first nonmagnetic layer that is interposed between the second ferromagnetic layer and the magnetic layer, and lateral dimensions of the magnetic layer of the synthetic ferrimagnetic reference layer are made larger than lateral dimensions of the first ferromagnetic layer and the second ferromagnetic layer.

Magnetic tunnel junction device, magnetoresistive random access memory using same and manufacturing method of magnetic tunnel junction device

To provide a magnetic tunnel junction (MTJ) element that is adapted to suppress the degradation of magnetic properties of a magnetic tunnel junction layer due to plasma CVD layer formation and adapted for miniaturization. The MTJ element includes a magnetic tunnel junction layer () and a plurality of passivation layers formed on a side wall of the magnetic tunnel junction layer. The plurality of passivation layers are SiN layers formed under different plasma CVD layer forming conditions and include a first passivation layerformed in direct contact with the magnetic tunnel junction layer. A hydrogen ion density or hydrogen ion energy of a layer forming condition for the first passivation layer is lower than a hydrogen ion density or hydrogen ion energy of a layer forming condition for the other of the plural passivation layers. The other passivation layers include a passivation layer, a nitrogen density of which is higher than a nitrogen density of the first passivation layer.

Magnetic tunnel junction element, magnetic memory using the same, and manufacture method of magnetic tunnel junction element

Growing community of inventors

Tokyo, Japan

Masaki Yamada