Toshiba Memory Corporation

Kioxia Corporation

Kabushiki Kaisha Toshiba

Sandisk Technologies Inc.

Masaki Tsuji

Yoshiaki Fukuzumi

Hideaki Aochi

Hiroyasu Tanaka

Shinya Arai

Takayuki Okada

Takashi Ishida

Jun Fujiki

Kota Funayama

Takaya Yamanaka

Kojiro Shimizu

Masayuki Fukai

Akira Matsumura

Rikito Kanazawa

A semiconductor device includes a body including conductive layers stacked and spaced from each other in a first direction and first and second areas along a second direction intersecting the first direction, an insulating portion extending along the directions in the areas and dividing the conductive layers in a third direction intersecting the directions, first columnar portions extending along the first direction in the first area and including a semiconductor layer, memory cells being formed at intersections between the conductive and semiconductor layers, second columnar portions extending along the first direction in the second area and including an insulator, third columnar portions extending along the first direction in the second area and including a semiconductor layer, and contacts extending along the first direction in the second area and connected to a conductive layer. The second portions are arranged along the insulating portion on both sides thereof in the third direction.

Semiconductor device and manufacturing method thereof

According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.

Non-volatile memory device

According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.

Non-volatile memory device including a contour of an insulation film, located below a vertically oriented embedded body, having expanded portion corresponding to the second semicondutor portion of the lower structure

A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.

Semiconductor memory device and method for manufacturing the same

Non-volatile memory device having at least one metal and one semiconductor body extending through the electrode stack

Non-volatile memory device having at least one metal body and one semiconductor body extending through the electrode stack

Growing community of inventors

Yokkaichi, Japan

Masaki Tsuji