Sharp Kabushiki Kaisha Corporation

Masaki Tatsumi

Toshio Hata

Mayuko Fudeta

Taiji Morimoto

Shinji Yamaguchi

Yoshiki Sota

Kazuo Tamaki

Kensaku Yamamoto

Masayuki Ohta

Keisuke Miyazaki

Kazuhiko Wada

Tomoshi Kimura

Yoshiaki Ueda

Mitsuhiro Matsumoto

Shin Itoh

Masamichi Harada

Shin Ito

Mitsuru Hineno

Yoshifumi Inada

Improves light extraction efficiency. A light emitting deviceusing a white resin molding packageintegrally molded with lead framesconstituting an electrode corresponding to one or a plurality of light emitting elementand white resin, wherein an area in a plane view of a white resin surface on a reflective surface that is level with amounting surface of the light emitting elementis configured to be larger than total area in a plane view occupied by surfaces of the lead framesand the light emitting element. Further, a step section is formed on the surfaces of lead frames, white resin is filled in the step section, and the area of white resin surface on a reflective surface where the light emitting elementis mounted is increased.

Light-emitting device with reflective resin

The purpose of the present invention is providing a light emitting module capable of emitting illumination light having a nearly uniform color tone as a whole. The invention also provides a surface light source having such light emitting modules, and a liquid crystal display and an illuminating device having such a surface light source. In a light emitting module (), adjacent dot light sources () satisfy the relationships &#x394;X+&#x394;X=&#x394;X&#xd7;2 and &#x394;Y+&#x394;Y=&#x394;Y&#xd7;2, so that the resultant mixed color can fall within a target chromaticity rank area (M), and the center (gc) of a first chromaticity rank area g and the center (Ec) of a second chromaticity rank area (E) are axisymmetric with respect to virtual straight lines (gE, gE) that pass through the center (Mc) of the target chromaticity rank area (M) and parallel to one side or another side of the target chromaticity rank area (M).

Light emitting module, surface light source, liquid crystal display, and illuminating device

A semiconductor apparatus according to the present invention with a semiconductor element implemented on an insulated substrate comprises: a substrate front surface electrode formed on a front surface side of the insulated substrate and connected with an element electrode of the semiconductor element; a substrate back surface electrode formed on a back surface side of the insulated substrate and electrically connected with the substrate front surface electrode; and a plurality of connection electrodes, extending in a thickness direction of the insulated substrate from one side to the other side of a front surface and a back surface thereof, for electrically connecting the substrate front surface electrode with the substrate back surface electrode, where the substrate front surface electrode or the substrate back surface electrode is formed to have a plane pattern separated for each of the plurality of connection electrodes.

Semiconductor apparatus, inspection method thereof and electric device

A monolithic multi-wavelength laser device according to the present invention comprises a substrate, a first-wavelength lasing part having a ridge portion and a second-wavelength lasing part having a ridge portion, while each of the first-wavelength lasing part and the second-wavelength lasing part includes current blocking layers consisting of semiconductor thin films covering the side surfaces of the ridge portion and extending toward at least partial regions of a plane linked with the bottom surface of the ridge portion and an insulation layer, covering the current blocking layers, consisting of an insulating dielectric thin film made of a material having a lower refractive index than the current blocking layers.

Monolithic multi-wavelength laser device including a plurality of lasing parts and method of fabricating the same

A light confinement layer constructed of a semiconductor that has a refractive index different from that of p-type second cladding layers is formed to a small film thickness of not greater than 2 &#x3bc;m (about 0.5 &#x3bc;m) on the whole surface of ridge portions of two semiconductor lasers. Thus, the light confinement layer on the ridge portions is made roughly flat so as to be easily removable by etching. As a result, the exposure of p-type second cladding layers of the ridge portions due to deep etching is prevented to allow the confinement of light into the p-type cladding layers to be stably effected. A dielectric film is formed on the light confinement layer and reinforces the current constriction function lost by the reduction in the thickness of the light confinement layer.

Semiconductor laser device and manufacturing method therefor

A nitride-based semiconductor light-emitting device includes a light-emitting element having an n-GaN substrate and a nitride-based semiconductor multilayer film formed on the n-GaN substrate. The n-GaN substrate of the light-emitting element is fixed to a mount surface. The n-GaN substrate has one surface with the nitride-based semiconductor multilayer film formed thereon and an opposite surface with a metal layer and an ohmic electrode formed thereon. The metal layer contains a first metal and a second metal and the ohmic electrode is formed of the second metal. The adhesion between the ohmic electrode and the n-GaN substrate is thus improved. Accordingly, the semiconductor light-emitting device which is highly reliable with respect to the thermal strain from the mount surface can be provided.

Nitride-based semiconductor light-emitting device and manufacturing method thereof

A monolithic multiple-wavelength laser device includes a laser section of a first wavelength and a laser section of a second wavelength formed on a single GaAs substrate, wherein the laser section f the first wavelength includes a real guide structure, and the laser section of the second wavelength includes a loss guide structure. In such a multiple-wavelength laser device, loss in wave guiding can be reduced and operating current can be decreased, compared to a conventional device, when the first wavelength is within a wavelength band of about 780 nm and the second wavelength is within a wavelength band of about 650 nm, since the laser section of the first wavelength has the real guide structure.

Monolithic multiple-wavelength laser device and method of fabricating the same

There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions containing different types, respectively, of dopant. There is also provided a method of fabricating a semiconductor laser device, forming on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, initially forming a laser portion in a crystal growth method and subsequently forming another laser portion in a different crystal growth method.

Semiconductor laser device and method of fabricating the same

A gallium nitride compound semiconductor light emitting element has a nitride layered body formed on a translucent substrate. A P type pad electrode, an N type pad electrode and a P type electrode are formed at the layered body, each having the desired reflectance. The thickness of the translucent substrate and the nitride layered body stacked thereon of the semiconductor light emitting element is 60 &#x3bc;m to 460 &#x3bc;m.

Semiconductor light emitting element and semiconductor light emitting device

A light-emitting device includes a first guide layer; a second guide layer; and an active layer interposed between the first guide layer and the second guide layer. The active layer has a multiple quantum well structure including a plurality of quantum well layers and a quantum barrier layer interposed between the adjacent quantum well layers. The first guide layer and the second guide layer are disposed to be adjacent to the quantum well layers. The first guide layer and the second guide layer have a forbidden band width which is larger than a forbidden band width of the quantum well layers. The forbidden band width of at least one of the first guide layer and the second guide layer is smaller than a forbidden band width of the quantum barrier layer.

Light-emitting device and fabricating method thereof

A nitride based semiconductor light emitting element includes at least a gallium nitride based compound semiconductor layer of a first conductivity type and a gallium nitride based compound semiconductor layer of a second conductivity type stacked on a substrate. On a main region of the top surface of the semiconductor layer of the second conductivity type, a Pd-containing electrode is formed, and the top surface and side surfaces of the Pd-containing electrode as well as the surface of the semiconductor layer of the second conductivity type in a region of at least a prescribed width from the side surfaces are covered by a conductive shielding film to be shielded from the atmosphere or a mold resin.

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Tenri, Japan

Masaki Tatsumi