Murata Manufacturing Co., Ltd.

Masaki Takeuchi

Hajime Yamada

Yukio Yoshino

Hideki Kawamura

Tadashi Nomura

Daisuke Nakamura

Kazuhiro Inoue

Yutaka Takeshima

Yoshihiko Gotoh

Ken-ichi Uesaka

Koichi Nishita

Yoshimitsu Ushimi

Hiroyuki Fujino

Yoshihiko Goto

Takashi Hayashi

Shigeki Nishiyama

Hiroshi Matsubara

Tomoyuki Ashimine

Hiroshi Nakagawa

Masatomi Harada

Takeshi Kagawa

Hidetoshi Fujii

Hidekazu Kitamura

Akihiko Shibata

Seiichi Arai

Masashi Kubota

Norimitsu Tsukai

Ville Kaajakari

Satoru Goto

Yoshinari Nakamura

Noromitsu Tsukai

A sensor includes a film portion deformable by external force, a support body supporting the film portion, and a magnetoresistive element portion on the film portion and including a unit element that includes a first magnetic layer whose magnetization direction changes in accordance with deformation of the film portion, a second magnetic layer whose magnetization direction is fixed, and an intermediate layer between the first and second magnetic layers. The film portion includes a first side portion in a portion of an outer edge of the film portion. A slit portion is provided in the film portion and includes at least a portion along the first side portion, so that the film portion includes a connection portion in which the first side portion is partially connected to the support body. A magnetoresistive element portion is provided in the connection portion.

Sensor, strain detection sensor, pressure sensor, and microphone

A semiconductor device that includes a semiconductor substrate; a first capacitance section on the semiconductor substrate, the first capacitance section including a first electrode layer, a first dielectric layer, and a second electrode layer; a second capacitance section on the semiconductor substrate, the second capacitance section including a third electrode layer, a second dielectric layer, and a fourth electrode layer; a first external electrode; a second external electrode; a first lead wire led out from the first capacitance section to the first external electrode and having an inductance L; and a second lead wire led out from the second capacitance section to the second external electrode and having an inductance L, wherein an electrostatic capacity Cof the first capacitance section and an electrostatic capacity Cof the second capacitance section are different, and L/L=0.8 to 1.2.

Semiconductor device

A plurality of capacitors and a holding body constructed to hold the plurality of capacitors. Each of the plurality of capacitors includes a semiconductor substrate, a first electrode layer, a dielectric layer, a second electrode layer, and an outer electrode. Among a first capacitor and a second capacitor of the plurality of capacitors, the second capacitor has a shape different from a shape of the first capacitor in at least one of the first electrode layer, the second electrode layer, and the outer electrode.

Capacitor cluster having capacitors with different shapes

A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface that face each other in a thickness direction, the first main surface containing a trench; an insulation layer on a surface of the trench; a first electrode layer on the insulation layer; a first dielectric layer on the first electrode layer; and a second electrode layer on the first dielectric layer, in which a thickness (L) of the insulation layer, a thickness (L) of the first electrode layer, and a thickness (L) of the second electrode layer satisfy L&#x3e;L&#x3e;L.

Semiconductor device and module

A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface facing each other in a thickness direction, the first main surface including a trench. The trench has a predetermined depth in the thickness direction and has a substantially wedge shape that has a first side surface and a second side surface that face each other and are not parallel to each other, and a first end surface and a second end surface that face each other and are substantially parallel to each other. The first side surface and the second side surface intersect each other at a line, or extension surfaces of the first side surface and the second side surface extended in the thickness direction intersect each other at a line, and the line extends in a first direction that does not align with a cleavage plane of the semiconductor substrate.

A capacitor that includes a substrate having a first main surface and a second main surface that are opposite to each other, and a plurality of trench portions on the first main surface; a dielectric film adjacent the first main surface of the substrate and extending into interiors of the plurality of trench portions; a conductor film on the dielectric film and extending into the interiors of the plurality of trench portions; and a bonding pad electrically connected to the conductor film. In a plan view from a direction normal to the first main surface of the substrate, the plurality of trench portions are arranged in second regions disposed along a second direction and not in first regions disposed along a first direction in which a bonding wire electrically connected to the bonding pad extends.

Capacitor

A capacitor that includes a substrate; a capacitor formation region in which one or more trenches are formed; a dummy region located between the capacitor formation region and an end of the substrate; a first electrode formed inside the one or more trenches to cover the capacitor formation region, and a dielectric film; a second electrode that covers the capacitor formation region and has a different potential from the first electrode; and an extended portion that formed in the dummy region. Moreover, the extended portion forms a recess or a protrusion on the substrate in a path from the second electrode to the end portion of the substrate.

A pizoelectric filter capable of improving the shielding property and increasing the heat releasing property is provided. The piezoelectric device includes a cover and piezoelectric device chips which are stacked and sealed together. The piezoelectric device also includes first external electrodes exposed at an upper surface of the cover and a grounded second external electrode exposed at the upper surface and a side surface of the cover. Electroconductive bonding materials are disposed between the cover and the piezoelectric device chips and all around an outer edge which connects the cover to the piezoelectric device chips so as to form a seal. The electroconductive bonding materials are also connected to the grounded second external electrode.

Piezoelectric device

A manufacturing method for an electronic component includes a process of forming a lower electrode and a dummy electrode, which are electrically connected to each other, on a substrate, and a process of forming a piezoelectric thin film on the dummy electrode and the lower electrode while a predetermined bias potential is applied to the lower electrode via the dummy electrode. In this method, the piezoelectric thin film is formed on the lower electrode by stabilizing the potential of the lower electrode, thereby decreasing the surface roughness of the piezoelectric thin film. It is thus possible to manufacture an electronic component that exhibits excellent piezoelectric characteristics, in which the electromechanical coupling coefficient and the quality factor of a resonator are increased.

Method of manufacturing an electronic component

A piezoelectric thin-film resonator includes a supporting substrate. A piezoelectric thin-film is formed on the supporting substrate. A lower electrode and an upper electrode are formed with the piezoelectric thin-film therebetween. The stiffness of at least one of the lower and upper electrodes is higher than that of the piezoelectric thin-film.

Piezoelectric thin-film resonator, piezoelectric filter, and electronic component including the piezoelectric filter

A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiOand AlO, respectively, AlOhaving oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.

Method for manufacturing a piezoelectric resonator

A piezoelectric filter and other electronic components are constructed such that the accuracy of frequency adjustment can be increased and an improvement in efficiency of the adjustment operation can be achieved. The piezoelectric filter includes a plurality of piezoelectric resonators including a substrate and a vibration portion provided on the substrate, the vibration portion having a structure in which the top and bottom surfaces of a thin film portion including at least one piezoelectric thin film are sandwiched between at least a pair of an upper electrode and a lower electrode facing each other, wherein the upper electrode of a predetermined piezoelectric resonator is made of a material having susceptibility to etching that is different from that of the upper electrode of the other piezoelectric resonator.

Piezoelectric filter, duplexer, composite piezoelectric resonator, communication device and method for adjusting frequency of piezoelectric filter

A method for manufacturing a thin film is performed such that the internal stress is controlled while the preferred orientation property is maintained at a high value. An AlN piezoelectric thin film is formed on a substrate by a sputtering method using a mixed gas including Ar and nitrogen, wherein the mixed gas has a nitrogen flow rate ratio, that is, nitrogen flow rate relative to the sum of the Ar flow rate and the nitrogen flow rate, of about 10% to about 75%.

Method for manufacturing a thin film

A piezoelectric resonator includes a substrate and a vibrator. The vibrator includes a thin-film portion having at least one piezoelectric thin-film layer disposed on the substrate and at least one pair of upper and lower electrodes disposed on the substrate. The vibrator has a structure in which the thin-film portion is sandwiched from the upper and lower surfaces thereof by the upper and lower electrodes, which oppose each other in the depth direction, and the overlapping portion of the vibrator defined by the opposing upper and lower electrodes has a tetragonal shape, when viewed in the depth direction, other than a rectangle and a square, the tetragonal shape having substantially parallel sides having a longitudinal length equal to or smaller than about 10 times the oscillatory wavelength and also having at least one portion in which the distance between opposing electrode edges varies.

Growing community of inventors

Otsu, Japan

Masaki Takeuchi