Ulvac, Inc.

Masaki Takei

Satoru Ishibashi

Noriaki Tani

Satoru Takasawa

Hirohisa Takahashi

Sadayuki Ukishima

Tadashi Masuda

Junya Kiyota

Motoshi Kobayashi

Kyuzo Nakamura

Masaru Wada

Kazutoshi Takahashi

Kazuya Saito

Hiroaki Katagiri

Makoto Arai

Yasuhiko Akamatsu

Akihiro Yokoyama

Yuu Kawagoe

Kentarou Takesue

Mitsuru Ueno

Tomiyuki Yukawa

Yuuichi Oishi

Koji Hidaka

Junichi Sakamoto

A thin-film transistor according to an embodiment of the present invention includes: a gate electrode; an active layer formed of an oxide containing indium, zinc, and titanium; a gate insulating film formed between the gate electrode and the active layer; and a source electrode and a drain electrode that are electrically connected to the active layer. Atomic proportions of elements relative to the total quantity of indium, zinc, and titanium that constitute the oxide may be not less than 24 at. % and not more than 80 at. % for indium, not less than 16 at. % and not more than 70 at. % for zinc, and not less than 0.1 at. % and not more than 20 at. % for titanium.

Thin-film transistor, oxide semiconductor film, and sputtering target

The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate.

Magnetron sputtering apparatus and magnetron sputtering method

A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films.

Method for forming wiring film, transistor and electronic device

A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and then, a conductive film containing copper as a main component and additive metals, such as Ti or Zr, is formed. Such a conductive film has high adhesion to a silicon layer and a glass substrate and is hardly peeled off from the substrate. Furthermore, the specific resistance is low and the contact resistance to a transparent conductive film is also low. Thus, no deterioration in the electric characteristics occurs even when the conductive film is used for an electrode film. Accordingly, the conductive film formed by the present invention suited for TFT, and electrode films and barrier films of semiconductor elements, in particular.

Method for forming conductive film, thin-film transistor, panel with thin-film transistor, and method for manufacturing thin-film transistor

Growing community of inventors

Sammu, Japan

Masaki Takei