Rohm Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Osaka University

Masaki Takaoka

Noriyuki Shimoji

Shigeru Niki

Osamu Matsushima

Shogo Ishizuka

Kenichi Miyazaki

Keiichiro Sakurai

Daisuke Kaminishi

Yoshikazu Fujimori

Akira Kamisawa

Mizuho Okada

Norikazu Nishiyama

Nobuhisa Yamashita

A solid state imaging device includes a circuit unit formed on a substrate and a photoelectric conversion unit. The photoelectric conversion circuit includes a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film. The lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.

Solid state imaging device and fabrication method for the same

A piezoelectric thin film structure includes a substrate, a silicon oxide film disposed on the substrate, a first aluminum oxide film disposed on the silicon oxide film, a lower electrode layer disposed on the first aluminum oxide film, a piezoelectric film layer disposed on the lower electrode layer, and an upper electrode layer disposed on the piezoelectric film layer.

Piezoelectric thin film structure and angular velocity detection apparatus

A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided. A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit formed on a substrate; and a photoelectric conversion unit including a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.

An angular rate sensor includes: a substrate; and a vibrator having a beam part supported in a state of floating from the substrate and a pair of supports formed on the substrate and provided at both ends of the beam part for supporting the beam part. The vibrator includes a piezoelectric film formed in the beam part, a detecting electrode for detecting an angular rate, the detecting electrode being formed on the piezoelectric film so as to extend toward a center portion of the beam part from one end thereof, and a driving electrode for vibrating the vibrator, the driving electrode being formed on the piezoelectric film so as to extend toward the center portion of the beam part from the other end thereof and to be spaced from the detecting electrode.

Angular rate sensor with vibrator

An electroconductive porous film high in the porosity and strong in the mechanical strength is provided. A mesoporous thin film of the invention, in which a crosslinking structure having a metal phosphate (M&#x2014;PO) skeleton is arranged so as to surround periodically arranged pores, is formed by use of a process that includes: a step of preparing a precursor solution containing phosphoric acid and a surfactant; a step of supplying the precursor solution to a substrate to form a precursor thin film; a step of bringing vapor containing a metal into contact with the precursor thin film obtained in the forming the thin film; a step of reacting the vapor containing a metal and phosphoric acid to form a self-organized thin film; and a step of removing the surfactant from the self-organized thin film.

Mesoporous thin film and method of producing the same

A semiconductor device and a method of producing the same is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of the substrate. A guide that functions as an etching stopper is formed in the semiconductor substrate. An opening having a width Wis formed in the guide. The opening faces an opening in a mask used in the formation of a through hole, and the width Wthereof is narrower than a width Wof the opening in the mask. The direction in which etching progresses is controlled by the opening formed in the guide as etching is conducted from a lower surface of the substrate to an upper surface of the substrate, and thus deviations in the width Wand position of an opening in the upper surface of the substrate can be controlled.

Semiconductor device and method of producing the same

A method of producing a semiconductor device is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of the substrate. A guide that functions as an etching stopper is formed in the semiconductor substrate. An opening having a width Wis formed in the guide. The opening faces an opening in a mask used in the formation of a through hole, and the width Wthereof is narrower than a width Wof the opening in the mask. The direction in which etching progresses is controlled by the opening formed in the guide as etching is conducted from a lower surface of the substrate to an upper surface of the substrate, and thus deviations in the width Wand position of an opening in the upper surface of the substrate can be controlled.

Growing community of inventors

Kyoto, Japan

Masaki Takaoka