Matsushita Electric Industrial Co., Ltd.

Otsuka Pharmaceutical Company, Limited

Masaki Suzuki

Toshiyuki Watanabe

Akira Takahashi

Shigeyuki Yamamoto

Toshimichi Ishida

Tomohiro Okumura

Geraldine C Harriman

Kazumi Kondo

Nobuaki Ito

Shin Miyamura

Tomoichi Shinohara

Takeshi Kuroda

Muneaki Kurimura

Amy M Elder

Satoshi Shimizu

Hideo Haraguchi

Tatsuo Ito

Kevin J Hodgetts

Jason S Newcom

Haruka Takahashi

Tae Fukushima

Indranath Ghosh

Kenta Arai

Krishna Reddy Valluru

Abhishek Dogra

Shoji Fukui

Shin Iwata

Ichiro Nakayama

Yoshiaki Igarashi

Keishi Kubo

Takeo Sato

Norio Okutani

Yuichi Nakamura

Izuru Matsuda

Yohji Sakurai

Hiroyuki Nagano

Mikio Hasegawa

Saburo Kubota

Kazuo Arai

Hidetoshi Kawa

Takuya Matsui

Yuji Tsutsui

Nobuya Sano

Nobuhisa Maeda

Yasuo Tanaka

Susumu Kinoshita

Hisayuki Matsumoto

Masaru Kishimoto

Yoshihumi Hara

Kentaro Shingo

Syouzou Watanabe

Toshikazu Yosumi

Seiichi Ushijima

Akira Ihara

Kenichi Oku

Takuya Chiba

Amy Elder

The present invention provides a novel heterocyclic compound represented by Formula [I] and a salt thereof: wherein the symbols are as defined in the specification, which is useful for treating, preventing and/or diagnosing seizure and the like in disease involving epileptic seizure or convulsive seizure (including multiple drug resistant seizure, refractory seizure, acute symptomatic seizure, febrile seizure and status epilepticus), as well as a medical use therefor.

Heterocyclic compounds for the treatment of epilepsy

The present invention provides a novel pyrimidine compound represented by Formula [I] and a salt thereof: [in the formula, the symbols are as defined in the specification], which is useful for treating, preventing and/or diagnosing seizure and the like in disease involving epileptic seizure or convulsive seizure (including multiple drug resistant seizure, refractory seizure, acute symptomatic seizure, febrile seizure and status epilepticus), as well as a medical use therefor.

Pyrimidine compound

Methods of treating disorders using compounds that modulate striatal-enriched tyrosine phosphatase (STEP), such as those of formula (III), and composition thereof are described herein. Exemplary disorders include schizophrenia and cognitive deficit. 

Therapeutic compounds and related methods of use

The present invention provides a novel heterocyclic compound. A heterocyclic compound represented by general formula (1) wherein, Rand R, each independently represent hydrogen; a phenyl lower alkyl group that may have a substituent(s) selected from the group consisting of a lower alkyl group and the like on a benzene ring and/or a lower alkyl group; or a cyclo C3-C8 alkyl lower alkyl group; or the like; Rrepresents a lower alkynyl group or the like; Rrepresents a phenyl group that may have a substituent(s) selected from the group consisting of a 1,3,4-oxadiazolyl group that may have e.g., halogen or a heterocyclic group selected from pyridyl group and the like; the heterocyclic group may have at least one substituent(s) selected from a lower alkoxy group and the like or a salt thereof. 

Heterocyclic compounds for the treatment of stress-related conditions

Compounds, pharmaceutical compositions containing the compounds, and methods of using the compounds to treat a disorder, e.g., schizophrenia and cognitive deficit, in a subject are described herein. The compounds disclosed herein include quinoline and quinazoline-containing compounds that modulate striatal-enriched tyrosine phosphatase (STEP) activity.

A plasma processing method that controls an interior of a vacuum chamber to a specified pressure by introducing gas into the vacuum chamber and evacuating the interior of the vacuum chamber. A high-frequency power having a frequency of 50 MHz to 3 GHz is supplied to a site of an antenna other than its center and periphery with the antenna provided opposite to a substrate in the vacuum chamber, in a state where a general center of the antenna and the vacuum chamber are short-circuited to each other. Meanwhile, the interior of the vacuum chamber is controlled to the specified pressure, and plasma is generated within the vacuum chamber and the substrate placed on a substrate electrode is processed within the vacuum chamber.

Plasma processing method and apparatus

A vacuum processing apparatus includes a reaction chamber, a non-reaction chamber which is a load-lock chamber or a double load-lock chamber. A double arm is accommodated in the non-reaction chamber, and includes a first arm and a second arm for taking out a processed wafer from the reaction chamber and supplying an unprocessed wafer to the reaction chamber. Wafer elevating mechanisms are provided in the reaction chamber and the non-reaction chamber. The double arm and the wafer elevating mechanisms are driven by a single drive source. Also, a selective engagement mechanism is provided at the reaction chamber and at the non-reaction chamber for selectively engaging the driving source with any one of the wafer elevating mechanisms at the reaction chamber and the non-reaction chamber to drive the double arm and the wafer elevating mechanism at the selected chamber.

Vacuum processing apparatus and method

A plasma processing apparatus includes a vacuum container accommodating a to-be-processed substrate. A vacuum discharge device discharges gas from the container, and a gas feed device feeds a gas in the container. A pair of electrodes includes one which has a concave surface for holding the substrate thereon. A high frequency power supply device supplies a high frequency power to the electrodes, a gas feed device for filling between the substrate and the electrodes with an inert gas to cool the substrate, and a holding device for pressing a side end face of the substrate in a direction along a surface of the substrate to shape the substrate into a concave while holding the substrate on the concave surface of the electrode.

Plasma processing apparatus and method

In a plasma processing apparatus having an upper electrode and a lower electrode in a vacuum chamber, a substrate receiving face of the lower electrode is formed to have a same convex surface as a deflected face of a substrate on condition that surface of the substrate is freely supported on an circumference thereof, and a uniform pressure is applied to the back of the substrate.

Apparatus and method for plasma-processing

Method of handling wafers in a vacuum processing apparatus

A vacuum plasma processing apparatus includes a vacuum processing container accommodating a to-be-processed substrate, a feeding device for feeding a reaction gas to the container, a vacuumizing device for discharging a gas in the container therefrom, a susceptor for holding the to-be-processed substrate arranged in the container, split electrodes arranged in a deltaic lattice at a wall surface of the container facing the to-be-processed substrate, and a power source unit for impressing to the slit electrodes three-phase RF powers having three phases different from each other. When the electrodes are arranged in an orthogonal lattice at the wall surface of the continuer, the power source unit impresses thereto two-phase RF powers having two phases different from each other.

Vacuum plasma processing apparatus and method

A dry etching apparatus includes a first electrode provided with means for controlling a temperature of a to-be-etched member, a second electrode disposed facing in parallel to the first electrode, a vacuum container housing the first and second electrodes therein, a device for feeding etching gas into the vacuum container, and a device for impressing a high frequency power between the first and second electrodes. A surface of the first electrode to be in touch with both the to-be-etched member and the etching gas and to which the high frequency power is impressed is coated with an insulating film of volume resistivity .rho. within a range: 1.times.10.sup.8 .OMEGA.cm.ltoreq..rho.&lt;1.times.10.sup.9 .OMEGA.cm.

Dry etching apparatus

A robot-teaching cassette is used to teach a robot to position a wafer cassette or a substrate cassette on a cassette-supporting base by the robot, without using the wafer cassette or the substrate cassette. The robot-teaching cassette includes a fixing section capable of being fixed in position on the cassette-supporting base, a moving section capable of being held with a robot-chucking section of the robot and moving separately from the fixing section, a light source provided on the fixing section or the moving section, and a target establishing a reference position, for receiving beams emitted by the light source and provided on the fixing section or the moving section.

Robot-teaching cassette

A circular arc illumination apparatus includes a light source section for emitting rays, a condensing optical system for condensing the rays emitted by the light source section, a rotating mirror driven by a motor and reflecting the condensed rays from the condensing optical system, and a circular arc-shaped bending mirror for reflecting the rays reflected by the rotating mirror toward a mask so that the rays become incident on the mask. The apparatus effectively utilizes light emitted by the light source section, exposes an object uniformly, and is practical and economical for exposing a large substrate.

Circular arc illumination apparatus

A circular arc illumination apparatus includes a light source device, a condensing optical system for condensing rays emitted by the light source device, and a scanning optical system for transmitting the rays to an object to be scanned. The scanning optical system includes a driving device, a rotating mirror driven by the driving device, an angular velocity detecting device for detecting an angular velocity of the rotating mirror, a controller for controlling the driving device based on an angular velocity of the rotating mirror detected by the angular velocity detecting device so as to vary the angular velocity in one time scanning, and a circular arc-shaped bending mirror for reflecting scanning rays reflected by the rotating mirror to the object. The axis of the bending mirror is coincident with a rotary axis of the rotating mirror.

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Hirakata, Japan

Masaki Suzuki