Toyoda Gosei Co., Ltd.

Meijo University

Koito Manufacturing Company, Ltd.

Masaki Oya

Isamu Akasaki

Tetsuya Takeuchi

Motoaki Iwaya

Satoshi Kamiyama

Kazuyoshi Iida

Koji Okuno

Ryo Nakamura

Naoki Sone

Koichi Mizutani

Takashi Mizobuchi

Lu Weifang

To suppress current leakage between the semiconductor layer below the mask and the buried layer above the mask. To reduce the drive voltage and improve the emission efficiency by improving the efficiency of carrier injection into the active layer. The semiconductor light-emitting device includes a substrate, a mask, a columnar semiconductor, a buried layer, a cathode electrode, and an anode electrode. The substrate has a conductive substrate, an n-type semiconductor layer disposed on the conductive substrate, and a p-type semiconductor layer disposed on the n-type semiconductor layer. The p-type semiconductor layer has a high resistance, thereby enhancing insulation between the n-type semiconductor layer and the buried layer.

Semiconductor device and method for producing semiconductor device

Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.

Semiconductor light emitting device and manufacturing method of semiconductor light emitting device

A light-emitting device includes a light-emitting element mounted on a base substrate, a reflective member that is formed on the base substrate and surrounds the light-emitting element, a transparent member that has a flat upper surface and is placed to cover above the light-emitting element, and a DBR film placed on the upper surface of the transparent member. A relation between an incident angle of light emitted from the light-emitting element and input into the DBR film and a transmittance of the light to pass through the DBR film is obtained such that a peak of the transmittance is in a range of the incident angle greater than 0&#xb0;.

Light-emitting device including a Distributed Bragg Reflector (DBR) film

Growing community of inventors

Kiyosu, Japan

Masaki Oya