Sony Corporation

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Masaki Okamoto

Reijiroh Shohji

Satoru Wakiyama

Masaki Haneda

Yutaka Ooka

Kazunori Nagahata

Yoshifumi Zaizen

Minoru Ishida

Kazutaka Yamane

Kiyotaka Tabuchi

Hajime Yamagishi

Takashi Oinoue

Shota Hida

Nobutoshi Fujii

Hiroyuki Kawashima

Hiroshi Tazawa

Suguru Saito

Hiroyasu Matsugai

Takeshi Takeda

Kaori Takimoto

Takatoshi Kameshima

Hiroyuki Itou

Toshiaki Shiraiwa

Keiji Ohshima

Yoshiyuki Enomoto

Tadayuki Kimura

Tsutomu Shimayama

Yukihiro Ando

Masayuki Okada

Katsuhisa Kugimiya

This technology relates to a solid-state imaging device and an electronic apparatus by which image quality can be enhanced. The solid-state imaging device includes a pixel region in which a plurality of pixels are arranged, a first wiring, a second wiring, and a shield layer. The second wiring is formed in a layer lower than that of the first wiring, and the shield layer is formed in a layer lower at least than that of the first wiring. This technology is applicable to a CMOS image sensor, for example.

Solid-state imaging device and electronic apparatus to enhance image quality

A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.

Multilayer light detecting device and electronic apparatus

There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

Semiconductor device, manufacturing method for semiconductor device, and electronic device

Solid-state imaging device and electronic apparatus

Semiconductor device, manufacturing method thereof, solid-state imaging device, and electronic apparatus with multi-layer interconnects

There is provided a semiconductor device a method for manufacturing a semiconductor device, and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.

Influence of chipping in case of dicing a plurality of stacked substrates is reduced. Provided is a semiconductor device where a substrate, in which a groove surrounding a pattern configured with a predetermined circuit or part is formed, is stacked. The present technology can be applied to, for example, a stacked lens structure where through-holes are formed in each substrate and lenses are disposed in inner sides of the through-holes, a camera module where a stacked lens structure and a light-receiving device are incorporated, a solid-state imaging device where a pixel substrate and a control substrate are stacked, and the like.

Lens substrate, semiconductor device, and electronic apparatus

Semiconductor device, manufacturing method thereof, solid-state imaging device, and electronic apparatus

There is provided a semiconductor device and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a second wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.

There is provided a method for manufacturing a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

Method of manufacturing a semiconductor device

Growing community of inventors

Kumamoto, Japan

Masaki Okamoto