Shin-etsu Chemical Co., Ltd.

International Business Machines Corporation

Japan Atomic Energy Agency

Shin-etsu Chemical C O., Ltd.

Eudyna Devices Inc.

Shin-etsu Chemicla Co., Ltd.

Masaki Ohashi

Jun Hatakeyama

Takayuki Fujiwara

Youichi Ohsawa

Takeshi Kinsho

Masahiro Fukushima

Koji Hasegawa

Takeru Watanabe

Kazuhiro Katayama

Tomohiro Kobayashi

Satoshi Watanabe

Seiichiro Tachibana

Keiichi Masunaga

Masayoshi Sagehashi

Ryosuke Taniguchi

Teppei Adachi

Masaaki Kotake

Takayuki Nagasawa

Daisuke Domon

Takeshi Sasami

Kenichi Oikawa

Tsunehiro Nishi

Kazumi Noda

Motoaki Iwabuchi

Yasuyoshi Kuroda

Naoya Inoue

Kenji Yamada

Kazuya Honda

Shinya Yamashita

Wai-Kin Li

Wu-Song S Huang

Dario Leonardo Goldfarb

Katsuya Takemura

Martin Glodde

Hiroto Sugahara

Kazuaki Sakaki

Akihiro Seki

Tetsuya Kume

Hirochika Naganawa

Ryo Mitsui

Kojiro Shimojo

Chuanwen Lin

Tsutomu Ogihara

Toshinobu Ishihara

Mutsuo Nakashima

Takanobu Takeda

Akinobu Tanaka

Masashi Iio

Yusuke Biyajima

Katsuhiro Kobayashi

Wataru Kusaki

Shozo Shirai

Tsukasa Watanabe

Masahiro Kanayama

Kentaro Kumaki

Takahiro Suzuki

Yuki Kera

Shun Kikuchi

An onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by lithography, the resist composition exhibits a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

Onium salt, chemically amplified resist composition and patterning process

A resist composition is provided comprising (A) a sulfurane or selenurane compound, (B) an organic solvent, and (C) a base polymer comprising repeat units having an acid labile group. By virtue of the acid diffusion inhibitory function of the compound, the resist composition forms a resist pattern having improved LWR and CDU when it is processed by lithography using high-energy radiation.

Resist composition and pattern forming process

A chemically amplified negative resist composition comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1) is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER or LWR.

Chemically amplified negative resist composition and resist pattern forming process

A chemically amplified positive resist composition is provided comprising (A) a sulfurane or selenurane compound having formula (A1) wherein M is sulfur or selenium and (B) a base polymer containing a polymer comprising repeat units having formula (B1). The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER and CDU.

Chemically amplified positive resist composition and resist pattern forming process

A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where Wrepresents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; Wrepresents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and Mrepresents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

Resist composition and patterning process

A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and further containing at least one repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where Wrepresents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms with a heteroatom; Wrepresents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms without a heteroatom; Rf represents a divalent organic group shown by the following general formula; and Mrepresents an onium cation. This provides a resist composition and a patterning process of using it that show a particularly favorable mask dimension dependency and CDU in photolithography where a light source is a high-energy beam such as a KrF excimer laser beam, an electron beam, or an extreme ultraviolet ray.

A molecular resist composition is provided comprising (A) a betaine type onium compound having a sulfonium cation moiety and a sulfonate anion moiety in a common molecule, the sulfonium cation moiety having a phenyl group substituted with an optionally heteroatom-containing monovalent hydrocarbon group, the phenyl group being attached to the sulfur atom, and (B) an organic solvent, the resist composition being free of a base resin. When processed by lithography using KrF, ArF excimer laser, EB or EUV, the resist composition is improved in dissolution contrast, EL, MEF, and LWR.

Molecular resist composition and patterning process

A molecular resist composition and a pattern forming process. A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography. The molecular resist composition does not contain a base polymer. The molecular resist composition comprising a sulfonium salt having a cation of specific partial structure has a high sensitivity and forms a resist film with improved resolution and LWR, so that the resist composition is quite useful for precise micropatterning.

A resist composition comprising a base polymer and a quencher in the form of a heterocyclic amine compound having a tertiary ester structure offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

A resist composition comprising an iodized base polymer and an iodized benzene ring-containing quencher has a high sensitivity and improved LWR and CDU.

A novel sulfonium compound of formula (A) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by photolithography using KrF or ArF excimer laser, EB or EUV, the resist composition has a high sensitivity and reduced acid diffusion and is improved in lithography properties.

Sulfonium compound, chemically amplified resist composition, and patterning process

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of fluorosulfonic acid having an iodized or brominated aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.

Positive resist composition and patterning process

A resist composition comprising a base polymer and a sulfonium salt of a carboxylic acid having an iodine or bromine-substituted hydrocarbyl group offers a high sensitivity, minimal LWR and improved CDU, independent of whether it is of positive or negative tone.

A chemically-amplified negative resist composition includes: (A) a quencher containing an onium salt shown by the following formula (A-1); (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2); and (C) a photo-acid generator which generates an acid. Thus, the present invention provides: a negative resist composition which can form a favorable profile with high sensitivity and low LWR and CDU in a pattern; and a resist patterning process using the composition. 

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Joetsu, Japan

Masaki Ohashi