Sumitomo Chemical Company, Limited

Fujitsu Component Limited

Yokowo Co., Ltd.

Kanto Kagaku Kabushiki Kaisha

Jx Nippon Oil Energy Corporation

Jxtg Nippon Oil & Energy Corporation

Masaki Noguchi

Kenji Shibata

Kazutoshi Watanabe

Fumimasa Horikiri

Kazufumi Suenaga

Kenji Kuroiwa

Daisuke Watanabe

Shinichi Komatsu

Takaya Matsumoto

Atsushi Sato

Tetsuhiro Ishikawa

Takahiro Nagata

Ryuichi Ueno

Takuto Yoshida

Yusuke Matsuo

Akira Shiibashi

Takashi Iwao

Yasuo Fukushima

Tsuyoshi Yamato

Suenaga Kazufumi

A first signal line pattern has one end electrically connected to a first connector. A second signal line pattern has one end electrically connected to a second connector. The second signal line pattern has the other end facing the other end of the first signal line pattern. A conductive block has a convex portion. The convex portion of the conductive block is electrically connected to a third portion of the conductive pattern positioned between the other end of the first signal line pattern and the other end of the second signal line pattern of the wiring board.

Inspection device

This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.

Method for manufacturing niobate-system ferroelectric thin-film device

A tetracarboxylic dianhydride, which is a compound represented by the following general formula (1): [in the formula (1), A represents a divalent aromatic group in which the number of carbon atoms forming an aromatic ring is 6 to 30 or the like, and multiple Rs each independently represent a hydrogen atom or the like].

Tetracarboxylic dianhydride, polyamic acid, polyimide, methods for producing the same, and polyamic acid solution

There is provided a ferroelectric thin-film laminated substrate, including a substrate, and further including a lower electrode layer, a ferroelectric thin-film layer, an upper electrode adhesive layer, and an upper electrode layer being sequentially stacked on the substrate, in which: the lower electrode layer is made of platinum or a platinum alloy; the ferroelectric thin-film layer is made of a sodium potassium niobate (typical chemical formula of (KNa)NbO, 0.4&#x2264;x&#x2264;0.7); the upper electrode layer is made of gold; the upper electrode adhesive layer is made of a metal that has less oxidizability than titanium and can make a solid solution alloy without generating an intermetallic compound with gold; and a part of the upper electrode adhesive layer and a part of the upper electrode layer are alloyed.

Ferroelectric thin-film laminated substrate, ferroelectric thin-film device,and manufacturing method of ferroelectric thin-film laminated substrate

This method for manufacturing a niobate-system ferroelectric thin-film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film, the etch mask being an amorphous fluororesin film laminated via a noble metal film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a chelating agent; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.

An alkali-niobate-based piezoelectric thin film element includes a substrate, a lower electrode film on the substrate, a piezoelectric thin film on the lower electrode film, and an upper electrode film on the piezoelectric thin film. The piezoelectric thin film is made of an alkali-niobate-based piezoelectric material represented by the formula (NaKLi)NbO, where 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;0.2, and x+y+z=1. The piezoelectric thin film has an element pattern and contains a metal element in a higher concentration near the upper electrode film than near the lower electrode film. The average concentration of the metal element is 5&#xd7;10atoms/cmor less in a region within &#xb1;15% of the thickness of the piezoelectric thin film from a position corresponding to half the thickness of the piezoelectric thin film.

Alkali-niobate-based piezoelectric thin film element

A detector apparatus includes a support unit having a support surface for supporting an outer circumferential surface of a roll, and a detector configured to detect a near end of the roll in response to both a change in an outer diameter or weight of the roll and a change in a relative position of an inner circumferential surface of the roll to the support surface.

Detector apparatus for detecting near end of roll paper

There is provided a method for manufacturing a niobate-system ferroelectric thin film device, including: a lower electrode film formation step of forming a lower electrode film on a substrate; a niobate-system ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask formation step of forming a desired etch mask pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of forming a desired fine pattern of the niobate-system ferroelectric thin film by wet etching using an etchant including an aqueous alkaline solution of a chelating agent.

Method for manufacturing niobate-system ferroelectric thin film device

A piezoelectric thin-film element includes a substrate, a lower electrode layer formed on the substrate, a piezoelectric thin-film layer that is formed on the lower electrode layer and includes potassium sodium niobate having a perovskite structure represented by the composition formula of (KNa)NbO(0.4&#x2266;x&#x2266;0.7), and an upper electrode layer formed on the piezoelectric thin-film layer. The piezoelectric thin-film layer is formed such that a value of (Ec+Ec)/2 is not less than 10.8 kV/cm and a value of (Pr+Pr)/2 is not more than &#x2212;2.4 &#x3bc;C/cmwhere Ecand Ecare intersection points of a polarization-electric field hysteresis loop and the x-axis indicating an electric field and Prand Prare intersection points of the polarization-electric field hysteresis loop and the y-axis indicating polarization.

Piezoelectric thin-film element, piezoelectric sensor and vibration generator

A method for producing an ester compound including reacting a compound having at least one cyclic structure of a norbornene ring and a norbornadiene ring with an alcohol and carbon monoxide by using a palladium catalyst and an oxidizing agent, to thereby introduce ester groups to carbon atoms forming a double bond in the cyclic structure and obtain the ester compound, wherein the palladium catalyst comprises a palladium complex having a bipyridyl as a ligand.

Method for producing ester compound

A printer includes a print head configured to print on recording paper, and a printer main body having a case in which the recording paper is set. The case includes a upper case part and a lower case part, and a size of the case is changeable by changing positions at which the upper case part and the lower case part are connected to each other.

Printer

A piezoelectric thin-film multilayer body includes a substrate, an adhesive layer on the substrate, a lower electrode layer on the adhesive layer, and a lead-free piezoelectric thin-film layer on the lower electrode layer. The lead-free piezoelectric thin-film layer is composed of lithium potassium sodium niobate (composition formula (NaKLi)NbO, 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, 0&#x2266;z&#x2266;1, x+y+z=1). The maximum height Rz of a roughness of an adhesive-layer-facing surface of the substrate is 2 nm or less. The adhesive layer is composed of a non-crystalline oxide of a Group 4 element or a non-crystalline oxide of a Group 5 element. The adhesive layer has a thickness of 1 nm or more and 2 nm or less and is equal to or more than the maximum height Rz of the roughness of the surface of the substrate.

Growing community of inventors

Tokyo, Japan

Masaki Noguchi