Admap Inc.

Mitsui Engineering and Shipbuilding Company Limited

Masaki Nakamura

Satoshi Kawamoto

A method of easily reproducing a film structure with low cost and a reproduction film structure manufactured using the same, the film structure reproduction method includes: a new film layer deposition step of depositing a new SiC layer on a non-active surface opposite to a damaged active surface; and an active surface fabrication step of fabricating the active surface to obtain a focus ring.

Film structure reproduction method and reproduction film structure

Disclosed is a silicon carbide substrate which has less high frequency loss and excellent heat dissipating characteristics. The silicon carbide substrate (S) is provided with a first silicon carbide layer (), which is composed of a polycrystalline silicon carbide, and a second silicon carbide layer (), which is composed of polycrystalline silicon carbide formed on the surface of the first silicon carbide layer. The second silicon carbide layer () has a high-frequency loss smaller than that of the first silicon carbide layer (), the first silicon carbide layer () has a thermal conductivity higher than that of the second silicon carbide layer (), and on the surface side of the second silicon carbide layer (), the high-frequency loss at a frequency of 20 GHz is 2 dB/mm or less, and the thermal conductivity is 200 W/mK or more.

Growing community of inventors

Okayama, Japan

Masaki Nakamura