Taiyo Yuden Co., Ltd.

Masaki Naganuma

Kazuhiro Watanabe

Tatsuro Sawatari

Yuichi Sugiyama

Tetsuo Saji

Hitoshi Ebihara

Fumitaka Iizuka

Kazuaki Ida

Masanobu Kaneko

There is provided a substrate with built-in component, including a metal core layer having a cavity for storing a component; a wiring layer that is laminated on the core layer and has a plurality of vias for an interlayer connection, the vias being formed at regions opposing to the cavity; and an electronic component including a plurality of terminals electrically connected to the plurality of vias, and a component body that is stored in the cavity and has a support surface for supporting the plurality of terminals, the plurality of terminals being disposed eccentrically from a center of the support surface to a first direction, and the component body being disposed eccentrically from a center of the cavity to a second direction opposite to the first direction.

Substrate with built-in component

In a first conductive layer and a third conductive layer that are respectively closest to a core layer having a storage portion that penetrates therethrough, four first penetrating holes and four first penetrating holes are formed so as to overlap part of an opening edge of the storage portion that is projected onto the first conductive layer and the third conductive layer, respectively.

Substrate with built-in electronic component

An input matching circuit is provided having the output impedance-frequency characteristics wherein the output impedance shows a value approximately equal to that of the gate input impedance of the FET at the frequency of the objective signal to be amplified, and the output impedance shows a value not more than twice the gate input impedance of the FET at least at the entire frequencies from the frequency of the objective signal to be amplified through twice the frequency of the objective signal to be amplified so that the matching between the input previous stage circuit and the gate of the FET can be secured. Thereby, a high-frequency power amplifier circuit and a high-frequency power amplifier module, which can suppress the occurrence of distortion, perform stably, and get miniaturized, are configured.

High-frequency power amplifier circuit and high-frequency power amplifier module

Growing community of inventors

Tokyo, Japan

Masaki Naganuma