Sony Corporation

National Institute of Information and Communications Technology, Incorporated

Hitachi, Ltd.

National Institute of Information

Sony Group Corporation

Masaki Murata

Osamu Enoki

Toru Udaka

Rui Morimoto

Shintarou Hirata

Yasuharu Ujiie

Hideaki Mogi

Yuya Kumagai

Ayumi Nihei

Masashi Bando

Miki Sudou

Iwao Yagi

Hiroshi Nishihara

Kentaro Torisawa

Yuichi Tokita

Junichi Kazama

Stijn De Saeger

Ryota Sakamoto

Mitsunori Nakamoto

Raku Shirasawa

Junko Kakinuma

Kow Kuroda

Tetsuji Yamaguchi

Norio Kimura

Masayuki Miyazaki

Shiro Mazawa

Masakazu Muroyama

Takuya Ito

Hajime Kobayashi

Norihito Kobayashi

Nobuhide Yoneya

Yohei Hirose

Hideyuki Kumita

Hiroto Sasaki

Yu Kato

Sae Miyaji

Ryoji Arai

Hitoshi Isahara

Sachiko Sakaigawa

Masayoshi Aonuma

Masanori Oka

Masaaki Tsuchida

Xiaoyun Lu

Hisato Kessoku

An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1). 

Photoelectric conversion element, image pickup element, laminated image pickup element, and solid-state image pickup device

Provided is a solid-state image sensor of a vertical spectral diffraction type in which a plurality of photoelectric conversion units are stacked in a region of each pixel, the solid-state image sensor includes a first photoelectric conversion module that includes a first photoelectric conversion unit that to performs photoelectric conversion on light in a first wavelength range of incident light, a first upper electrode and a first lower electrode with the first photoelectric conversion unit between the first upper electrode and the first lower electrode, and a first spectral correction unit between the first upper electrode and the first lower electrode stacked on the first photoelectric conversion unit and a second photoelectric conversion unit that performs photoelectric conversion on light in a second wavelength range of light that has passed through the first photoelectric conversion module, the second wavelength range is different from the first wavelength range.

Solid-state image sensor and electronic apparatus

An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

Photoelectric conversion element, imaging device, and optical sensor

There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.

Imaging element, stacked-type imaging element, imaging apparatus and electronic apparatus

Provided is a sensor apparatus including: a normal operation unit including a first sensor and a storage device; an external environment detection unit including a second sensor; a power supply switch unit configured to control supply of electric power to the normal operation unit; and a power supply configured to supply the electric power to the normal operation unit via the power supply switch unit. In the sensor apparatus, in an operational mode, the normal operation unit records data measured by the first sensor into the storage device, and, in a non-operational mode, when a measured value obtained by the second sensor satisfies a predetermined condition, the external environment detection unit controls the power supply switch unit so that the power supply switch unit supplies the electric power to the normal operation unit, and the normal operation unit records the data measured by the first sensor into the storage device.

Sensor apparatus, planning processing system, and planning method

In an image pickup element or a photoelectric conversion element, at least an anode, a carrier blocking layer, an organic photoelectric conversion layer, and a cathodeare laminated in order, and the carrier blocking layerincludes a material having the following structural formula (1), and part of an organic semiconductor material constituting the organic photoelectric conversion layer. 

Photoelectric conversion element, image pickup element, laminated image pickup element, and image pickup device

Photoelectric conversion element, image pickup element, laminated image pickup element, and solid-state image pickup device using an organic material having desired optical absorption properties

An image sensor includes at least a first electrode, a second electrode, an organic photoelectric conversion layer, and a carrier blocking layer. The carrier blocking layer is formed of a material having the following structural formula (1), and has a thickness of from 5&#xd7;10to 1.5&#xd7;10m: 

Image sensor, stacked imaging device and imaging module

A photoelectric conversion element includes (a-1) a first electrodeand a second electrodedisposed apart from each other, and (a-2) a photoelectric conversion material layerdisposed between the first electrodeand the second electrode. The photoelectric conversion material layeris formed of the following structural formula (1). 

Photoelectric conversion element, solid-state imaging device, organic light-absorbing material, and organic light-absorbing material intermediate

A photoelectric conversion element includes (a-1) a first electrodeand a second electrodedisposed apart from each other and (a-2) a photoelectric conversion material layerdisposed between the first electrode and the second electrode. The photoelectric conversion material layer contains a substance formed of the following structural formula (1). 

Photoelectric conversion element, solid-state imaging device, and organic light-absorbing material

Provided is a light receiving/emitting element and a light receiving/emitting apparatus that can be easily manufactured and allow high-sensitivity detection. The light receiving/emitting element is configured to include a first organic photoelectric conversion unit and a second organic photoelectric conversion unit that is disposed on the first organic photoelectric conversion unit and is different in spectral sensitivity from the first organic photoelectric conversion unit, wherein one of the first organic photoelectric conversion unit and the second organic photoelectric conversion unit acts as a light receiving unit and the other acts as a light emitting unit. The light receiving/emitting apparatus is configured to have the light receiving/emitting element mounted thereon.

Light receiving/emitting element and light receiving/emitting apparatus

Image sensors, electronic apparatuses, and methods of manufacturing an image sensor are provided. More particularly, an image sensor having a plurality of photoelectric conversion elements included in a laminated body is provided. At least one of the photoelectric conversion elements includes organic photoelectric conversion elements. In addition, at least a first surface of the laminated body includes a curved light incident surface, which further includes a concave surface. The plurality of photoelectric conversion elements receive light through the concave light incident surface. The laminated body can be connected to a support structure.

Solid-state image pickup device and electronic apparatus

Provided is a photoelectric conversion element including a photoelectric conversion material layer that is constituted by an organic material having more excellent sensitivity and responsiveness than those of conventional ones. The photoelectric conversion element of the present invention includes:

Photoelectric conversion element and solid-state imaging device

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Tokyo, Japan

Masaki Murata