Other

Kabushiki Kaisha Watanabe Shoko

National Institute of Advanced Industrial Science and Technology

Wacom Co., Ltd.

Wacom R&d Corporation

Wacom Corporation Limited

Asahi Denka Kogyo Kabushiki Kaisha

Kabushiki Kaisha Motoyamaseisakusho

M. Watanabe Co., Ltd.

Toda, Masayuki

Kusuhara, Masaki

Umeda, Masaru

Masaki Kusuhara

Masaru Umeda

Masayuki Toda

Mitsuru Fukagawa

Shigeki Sakai

Mitsue Takahashi

Osamu Uchisawa

Yoichi Kanno

Yoshikazu Sasaki

Kohei Yamamoto

Toshikatu Meguro

Mikio Doi

Michio Yagai

Hiroshi Morita

Koji Yamanaka

Hiroyuki Watanabe

Nobuyuki Yoshioka

Yoshikazu Nagamura

Jinichi Omi

Kunio Sugiyama

Shuichi Tada

Tadahiro Nakada

Hirofumi Uehara

Keiko Sanpei

Toda Masayuki

A FeFET and a method of its manufacture are provided, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm&#x3c;dr&#x3c;150 nm, without impairing the data retention property of not less than 10seconds and the data rewrite endurance property of not less than 10times, of those that have hitherto been developed, and the FeFET allowing a memory window of 0.40 V or more when a sweep amplitude of the gate voltage is not more than 3.3 V.

Method of making semiconductor ferroelectric memory element, and semiconductor ferroelectric memory transistor

A semiconductor memory element is provided including a laminated structure, in which a memory member and a conductor are superposed on a semiconductor substrate. The memory member has a bottom surface in contact with the semiconductor substrate, an upper surface in contact with the conductor, and side surfaces, which are in contact with and surrounded by a partition wall; the bottom surface of the memory member has a width of equal to or not more than 100 nm; a shortest distance between the conductor and the semiconductor substrate is twice or more of the width of the bottom surface of the memory member; the side surface of the memory member has a width, which is either the same as the width of the bottom surface and constant at any position above the bottom surface, or the widest at a position other than the bottom surface and above the bottom surface.

Semiconductor memory element, other elements, and their production methods

[Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm&#x3c;dr&#x3c;150, without impairing the data retention property of not less than 10seconds and the data rewrite withstand property of not less than 10times, of those that have hitherto been developed, and the FeFET allowing data to be written with a writing voltage whose absolute value is not more than 3.3 volts. [Means for Solving] In methods of making a device in which an insulator, a film made of constituent elements of a bismuth layered perovskite crystalline ferroelectric and a metal are sequentially formed in the indicated order on a semiconductor substrate and thereafter are annealed for ferroelectric crystallization, thereby preparing the device composed of the semiconductor, insulator, ferroelectric and metal, a method of making a semiconductor ferroelectric memory element in which the film is composed of Ca. Sr, Bi, Ta and oxygen atoms, the metal is Ir or Pt or an alloy of Ir and Pt, or Ru, and the annealing for ferroelectric crystallization is performed in a mixed gas having oxygen added to nitrogen or a mixed gas having oxygen added to argon.

Heretofore, silicon nitride film formed by low pressure plasma CVD has been used for an antireflection film of a solar battery. But it is difficult to reduce the production cost of a solar battery, because, in a low pressure process, facility cost and process cost are expensive. As disclosed, a nitride film is formed by atmospheric pressure plasma CVD using dielectric barrier discharge generated by a plasma head where a plurality of plasma head unit parts is installed in parallel to generate plasma by applying electric field or magnetic field via a dielectric member. Stable glow discharge is formed even under atmospheric pressure by dielectric barrier discharge. And nitride film deposition under atmospheric pressure and low cost production of a solar battery is materialized by using dielectric barrier discharge and by reacting different plasmas generated from plasma supply openings laying side-by-side.

CVD apparatus and method for forming CVD film

A ferroelectric device and a manufacturing method are provided. While holding a nonvolatile memory retention capability and a multiple rewriting endurance as the distinctive features of a ferroelectric device, the disclosed ferroelectric device is wider in memory window and more adaptively made microfiner than a conventional ferroelectric device that has used a ferroelectric mainly constituted of Sr&#x2014;Bi&#x2014;Ta&#x2014;O as an oxide of strontium, bismuth and tantalum. Directly on or with intermediary of an insulator on a semiconductor there are layered a first ferroelectric and a conductor to form a gate stack, the first ferroelectric being mainly constituted of Sr&#x2014;Ca&#x2014;Bi&#x2014;Ta&#x2014;O as an oxide of strontium, calcium, bismuth and tantalum and being built up by a metal organic vapor deposition technique from a suitable film-forming raw material. The gate stack is heat-treated to cause the first ferroelectric to develop its ferroelectricity.

Ferroelectric device and method of its manufacture

Because an evaporating apparatus for use in an MOCVD film deposition system has a structure in which a plurality of gas passages brings in a gas from the upper direction, the apparatus has a difficulty to position a jet nozzle, and the apparatus is incapable of accurately controlling the pressure and flow rate of a carrier gas mixed with a raw material solution to be issued into an evaporating unit, and it is thus difficult to highly accurately control the composition of MOCVD films. A plurality of gas passages is arranged on a flat, disk-shaped plate. With this configuration, the accurate positioning of the jet nozzle can be made easier, and the composition of MOCVD films can be controlled highly accurately.

Evaporation method and film deposition method

Vaporizing apparatus and film forming apparatus provided with vaporizing apparatus

Disclosed is a vaporizer constituted of a dispersing sectionand a vaporizing section. The dispersing sectioncomprises a gas introduction portfor introducing a carrier gasunder pressure into a gas passage, means for feeding raw material solutionsandto the gas passage, and a gas outletfor delivering the carrier gas containing the raw material solutions to the vaporizing section. The vaporizing sectioncomprises a vaporizing tubehaving one end connected to a reaction tube of the MOCVD system and having the other end connected to the gas outletof the dispersing section, and heating means for heating the vaporizing tube. The vaporizing sectionserves to heat and vaporize the raw material solution containing carrier gasdelivered from the dispersing section. The dispersing sectionincludes a dispersing section bodyhaving a cylindrical hollow portion, and a rodhaving an outer diameter smaller than the inner diameter of the cylindrical hollow portion. The rodhas a spiral grooveformed in the external periphery closer to the vaporizing section, the rod ibeing inserted into the cylindrical hollow portion.

Vaporizer for MOCVD and method of vaporizing raw material solutions for MOCVD

A vaporizer has gas passage formed inside of main body of a dispersion part, a gas inlet opening to introduce pressurized carrier gas into gas passage, a part to supply raw materials solution to carrier gas passing gas passage, a gas outlet to send carrier gas including dispersed raw material solution to vaporization part, a dispersion part to flow through gas passage having a part to cool, a vaporization pipe connected with a reaction part and gas outlet of dispersion part of the device, and a heater to heat vaporization pipe is provided, a vaporization part to heat and vaporizes the carrier gas where raw materials solution is dispersed is provided, and a radiation prevention portion having small hole for the outside of gas outlet is provided.

Vaporizer and various devices using the same and an associated vaporizing method

A vaporizer which can be used for extended time without blockage, and possible to stably supply raw materials to a reaction part. A gas passageis formed inside of main body of a dispersion part, a gas inlet openingis utilized to introduce a pressurized carrier gasinto gas passage, a supply sourceis utilized to supply raw material solutionto a carrier gas passing through gas passage. A vaporization pipeis connected with a reaction part and gas outletof dispersion partof the device, with a heaterto heat vaporization pipe, while a vaporization partis utilized to heat and vaporize the carrier gas where a raw material solution is dispersed.

Carburetor, various types of devices using the carburetor, and method of vaporization

A hydrous silica gel is dehydrated by freezing, thawing, and removing water separated by thawing, thereby yielding silica particles. In addition, the silica particles thus formed is washed and fired, thereby producing a synthetic quartz glass power. A water glass is dealkalized, an oxidizing agent and an acid are added, the mixture thus formed is passed through a hydrogen type cation exchange resin, the aqueous silica solution thus formed is then gelled, and the gelled material is then washed and fired, thereby producing a synthetic quartz powder. Silica is sequentially held for a predetermined time at each temperature range of 150 to 400&#xb0; C., 500 to 700&#xb0; C., and 1,100 to 1,300&#xb0; C., thereby producing a quartz glass.

Method for producing silica particles

Disclosed is a vaporizer constituted of a dispersing sectionand a vaporizing sectionThe dispersing sectioncomprises a gas introduction portfor introducing a carrier gasunder pressure into a gas passage, means for feeding raw material solutionsandto the gas passage, and a gas outletfor delivering the carrier gas containing the raw material solutions to the vaporizing sectionThe vaporizing sectioncomprises a vaporizing tubehaving one end connected to a reaction tube of the MOCVD system and having the other end connected to the gas outletof the dispersing sectionand heating means for heating the vaporizing tubeThe vaporizing sectionserves to heat and vaporize the raw material solution containing carrier gasdelivered from the dispersing sectionThe dispersing sectionincludes a dispersing section bodyhaving a cylindrical hollow portion, and a rodhaving an outer diameter smaller than the inner diameter of the cylindrical hollow portion. The rodhas a spiral grooveformed in the external periphery closer to the vaporizing sectionthe rodbeing inserted into the cylindrical hollow portion.

Disclosed is a vaporizer constituted of a dispersing section and a vaporizing section The dispersing section comprises a gas introduction port for introducing a carrier gas under pressure into a gas passage, means for feeding raw material solutions and to the gas passage, and a gas outlet for delivering the carrier gas containing the raw material solutions to the vaporizing section The vaporizing section comprises a vaporizing tube having one end connected to a reaction tube of the MOCVD system and having the other end connected to the gas outlet of the dispersing section and heating means for heating the vaporizing tube The vaporizing section serves to heat and vaporize the raw material solution containing carrier gas delivered from the dispersing section The dispersing section includes a dispersing section body having a cylindrical hollow portion, and a rod having an outer diameter smaller than the inner diameter of the cylindrical hollow portion. The rod has a spiral groove formed in the external periphery closer to the vaporizing section the rod being inserted into the cylindrical hollow portion.

A substrate body transfer apparatus, and an operating method therefor, capable of inserting and extracting substrate body into and from a cassette using air conveyance without employing a transfer mechanism such as those in which direct contact is made with the substrate body when inserting or extracting a thin plate-shaped substrate body into or from a cassette. The substrate body transfer apparatus is employed when thin plate-shaped substrate body are extracted from or inserted into cassettes which store the substrate body. The substrate body transfer apparatus includes an air conveyance hand which is provided with a plurality of gas nozzles at the conveyance surface which opposes the rear surface of the substrate body and which has the function of conducting the flotation or grounding of the substrate body, the catching or launch of the substrate body, or the centering of the substrate body; and a cassette platform which has a unitary structure comprising a cassette platform seat on which the cassette is placed and which is provided with a mechanism for horizontally advancing and retracting the cassette with respect to the air conveyance hand, and a mechanism for raising and lowering the cassette platform seat at a predetermined pitch.

Substrate transfer device and operating method thereof

A substrate body transfer apparatus which is capable of isolating the atmospheres of an external processing apparatus and an air conveyance apparatus and preventing the mutual contamination thereof, and which is capable of conducting the transfer of substrate bodies at a low level of particulate matter and contamination which satisfies the ultra-clean level. The substrate body transfer apparatus is provided with a vacuum container having an entrance and exit which communicate with the interior space of an air conveyance apparatus and the interior space of an external processing apparatus; a horizontal disc-shaped upper part valve and lower part valve are housed within the vacuum container and after the substrate body has been placed in a space surrounded by the upper and lower valves and this space has been sealed, the space is evacuated or the gas therein is replaced.

Growing community of inventors

Tokyo, Japan

Masaki Kusuhara