Canon Kabushiki Kaisha

Masaki Kurihara

Daisuke Shimoyama

Nobuhiko Sato

Masataka Ito

Yasuhiro Sekine

Kyouhei Watanabe

Naoki Inatani

Kei Aoki

Tetsuo Takahashi

Akira Okita

Hiroaki Sano

Yojiro Matsuda

Etsuro Kishi

Takayuki Sumida

Hiroaki Naruse

Norifumi Kajimoto

Shingo Kitamura

Koji Ishizuya

Hitoshi Shindo

Yasuhiro Kawabata

Junya Tamaki

Takehiro Toyoda

Masao Ishioka

Atsushi Kanome

Masahiro Kobayashi

Takeshi Ichikawa

Mahito Shinohara

Taro Kato

Toshiyuki Ogawa

Yoichi Wada

Ryo Yoshida

Genzo Momma

Takafumi Miki

Mitsuhiro Yomori

Tomoyuki Tezuka

Kosuke Asano

Jun Iwata

Masahiko Kondo

Nabuhiko Sato

A semiconductor device includes a plurality of wirings each having a damascene structure on a semiconductor layer, wherein the plurality of wirings includes a first wiring and a second wiring adjacent to each other, wherein the first wiring includes, along a direction in which the first wiring extends, a first portion, a second portion, and a third portion located between the first portion and the second portion, and wherein a width of the third portion is larger than each of a width of the first portion and a width of the second portion.

Semiconductor device and method for manufacturing semiconductor device

A device comprising a first layer, a sealing layer and a resin layer stacked in that order and an organic layer arranged between the first layer and the sealing layer in a pixel region is provided. The first, sealing and resin layers have openings for exposing an electrode in a peripheral region. The sealing layer includes second and third layers each having a water permeability lower than the first layer, and a fourth layer arranged between the second layer and the third layer and having a defect density lower than the second layer. A step of the second layer arranged above the end of the opening of the first layer is covered with the fourth layer and a step of the third layer arranged above the end of the opening of the first layer is covered with the resin layer.

Organic device and method of manufacturing the same

The present invention provides a light-emitting device including a substrate, a first EL element, and a second EL element, the first EL element and the second EL element each including a lower electrode, an organic compound layer including a light-emitting layer, an upper electrode, and a color filter in this order from the substrate, and an insulating layer that covers an end portion of the lower electrode. A first color filter of the first EL element and a second color filter of the second EL element overlap each other when viewed in plan in an overlapping region, and an inclined portion closest to the first EL element among inclined portions of the insulating layer of the second EL element and the overlapping region overlap each other when viewed in plan.

Light-emitting device, display apparatus, and image pickup apparatus

A photoelectric conversion apparatus includes a semiconductor layer having a front surface and a back surface and in which a plurality of photoelectric conversion portions is provided between the front surface and the back surface, a wiring structure arranged on the front surface side of the semiconductor layer, a separation portion arranged between the plurality of photoelectric conversion portions and formed by a trench continuing from the back surface, a first light shielding portion arranged above the semiconductor layer on the back surface side so as to overlap the separation portion, and a second light shielding portion arranged above the semiconductor layer on the back surface side so as to face the first light shielding portion via a region located above at least one photoelectric conversion portion among the plurality of photoelectric conversion portions.

Photoelectric conversion apparatus having light shielding portions above semiconductor layer on back surface side and equipment

An image capturing device is provided. The device includes a substrate comprising a pixel region, a peripheral region and a trench region, in which trenches are formed, between the pixel region and the peripheral region. The plurality of trenches include first trenches arranged to be spaced apart from each other in a first direction along a first side of an outer edge of the pixel region and second trenches arranged to be spaced apart from each other in the first direction. The first and second trenches are arranged to be spaced apart from each other in a second direction crossing the first direction. The first and second trenches are arranged so that, any straight line path which connects, without overlapping any one of the first and second trenches, the first side and the peripheral region, does not exist.

Image capturing device and camera

A photoelectric conversion apparatus includes a photoelectric conversion substrate having photoelectric conversion units and a microlens array arranged above the conversion units, a light transmissive plate, a first member arranged between the photoelectric conversion substrate and the light transmissive plate, and that bonds the photoelectric conversion substrate and the light transmissive plate, and a second member arranged between the first member and the microlens array. The second member has at least one of a refractive index lower than the microlens array or a porosity higher than the microlens array. A surface on a side of the photoelectric conversion substrate of the first member has a plurality of steps from a portion over the plurality of photoelectric conversion units to a side surface of the photoelectric conversion apparatus.

Photoelectric conversion apparatus and camera

A photoelectric conversion apparatus has a photoelectric conversion substrate having a plurality of photoelectric conversion portions and a microlens array arranged above the plurality of photoelectric conversion portions; a light transmissive plate; a first member arranged between the photoelectric conversion substrate and the light transmissive plate; a second member arranged between the first member and the microlens array; and a third member arranged between the first member and the second member. A porosity of the first member&#x3c;a porosity of the third member&#x3c;a porosity of the second member is satisfied.

Photoelectric conversion apparatus and system

A method for forming a color filter array includes a step of exposing a photosensitive color filter film, a step of forming a color filter array from the color filter film by developing the color filter film using a developer, and a step of cleaning the color filter array while rotating the color filter array and moving a nozzle for spraying fluid containing liquid and gas above the color filter array in a direction intersecting with an axis of the rotation. The method reduces variation in thickness of a color filter that is generated in the cleaning step.

Method for forming color filter array, method for manufacturing imaging apparatus, and imaging apparatus

A method of manufacturing a solid-state image sensor is provided. The method comprises preparing a structure which is covered by a protective film, depositing a first material by using a first color filter material on the protective film, forming a first color filter from the first material, depositing a second material by using a second color filter material after the forming the first color filter and forming a second color filter from the second material. An upper surface of the protective film has a concave portion. A part of the first material enters the concave portion in the depositing the first material, the first material is patterned so as to form a member in the concave portion from the first material in the forming the first color filter and the second material covers the member in the depositing the second material.

Method of manufacturing solid-state image sensor, solid-state image sensor, and camera

A solid-state imaging device has a first area in which a plurality of pixels are provided, a second area provided on an outer side with respect to the first area, and a third area provided on the outer side with respect to the second area. An inner-lens layer provided over the first to third areas has an opening. An insulating film provided below the inner-lens layer also has an opening.

Solid-state imaging device and method of manufacturing the same

A method of manufacturing a photoelectric conversion element including a step of forming a layer containing an organic material and particles dispersed in the organic material on a member including a photoelectric conversion portion and a step of roughening a surface of the layer by dry etching.

Photoelectric conversion element and method of manufacturing the same

A method of manufacturing a semiconductor apparatus, comprising forming a structure including an insulating layer on a substrate, and an electrode on the structure, forming an insulating first film covering the electrode and the structure, forming an opening in a projection, of the first film, formed by a step between upper faces of the electrode and the structure, to expose part of the upper face of the electrode as a first portion, forming a second film covering the first film and the first portion, forming a protective film in the opening by processing the second film, the protective film covering a side face defining the opening and the first portion and being not formed on an upper face of the projection, and forming a third film on the first film and the protective film by spin coating.

Method of manufacturing semiconductor apparatus

A method of manufacturing a semiconductor apparatus comprising forming an electrode on a structure provided on a substrate, the structure including a wiring pattern and an interlayer insulation film, forming a first film covering the electrode and the structure, forming an opening in a portion of the first film inside an outer edge of a convex portion formed by steps between upper faces of the electrode and the structure so as to expose a first portion as a portion of the upper face of the electrode, forming a second film covering the first film and the first portion, forming a protective film covering the first portion, the convex portion, and a periphery of the convex portion by patterning the second film, and forming a third film on the first film and the protective film by spin coating.

Growing community of inventors

Koza-gun, Japan

Masaki Kurihara